Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy（MOVPE）. Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al–N than that of Ga–N. When the sizes of the polycrystalline particles are larg... 

【文章來源】：Chinese Physics B. 2017,26(06)EISCI

【文章頁數(shù)】：5 頁

【文章目錄】：
1. Introduction
2. Experiment details
3. Results and discussion
4. Conclusions



本文編號：3410123