4H-SiC平面型和溝槽型MOSFET高低溫下的特性（英文）
發(fā)布時(shí)間：2021-08-24 21:32
采用自對(duì)準(zhǔn)工藝制備了1.2 kV4H-SiC平面型和溝槽型MOSFET器件,并在90～490 K的溫度范圍內(nèi)對(duì)4H-SiC MOSFET器件的靜態(tài)和動(dòng)態(tài)特性與商用1.2 kV Si IGBT器件的性能進(jìn)行了對(duì)比研究。4H-SiC MOSFET器件的靜態(tài)特性包括導(dǎo)通電阻（Ron）和閾值電壓（Vth）,而動(dòng)態(tài)特性則重點(diǎn)研究了開關(guān)能量損耗（ESW）隨溫度的變化。首次在低溫下針對(duì)與溝道缺陷相關(guān)的4H-SiC平面型和溝槽型MOSFET的動(dòng)態(tài)導(dǎo)通電阻退化機(jī)理進(jìn)行了定量化分析。實(shí)驗(yàn)結(jié)果發(fā)現(xiàn)4H-SiC平面型MOSFET器件的開啟瞬態(tài)的延遲較小短,而4H-SiC溝槽型MOSFET器件表現(xiàn)出顯著的開啟瞬態(tài)延遲和動(dòng)態(tài)導(dǎo)通電阻退化現(xiàn)象,在低溫下動(dòng)態(tài)電阻退化現(xiàn)象更為嚴(yán)重。CV特性曲線顯示動(dòng)態(tài)導(dǎo)通電阻退化是由于溝槽型器件溝道中與工藝相關(guān)的缺陷造成的。隨著4HSiC溝槽型MOSFET器件制備工藝的不斷成熟,工藝相關(guān)的缺陷有望得到緩解,從而從根本上消除動(dòng)態(tài)導(dǎo)通電阻的退化。
【文章來源】：微納電子技術(shù). 2020,57(08)北大核心
【文章頁數(shù)】：8 頁
【部分圖文】：
90～490 K內(nèi)開關(guān)損耗的變化趨勢(shì)比較
As shown in Fig.4,threshold voltage(Vth)of the three devices increases when temperatures decrease.In Fig.4,Vdsis source-drain voltage of the SiC MOSFETs,and Vceis collector-emitter voltage of the Si IGBT.However,Vthof the SiC MOSFETs increases about 4.5 V from500 K to 90 K,which is much larger than that of the Si IGBT(about 2.3 V).It has been reported that the Vthincrease is related to trapped interface electrons[18].Since the SiO2-SiC interface is much worse than the SiO2-Si interface,the temperature effects on threshold voltage of the 4H-SiC MOSFETs are more serious at low temperature com-pared with that of the Si IGBT.3 Switching Characterization
The double pulse testing(DPT)circuit including the under-test-device(DUT),a free-wheeling diode(FWD)and a load inductor[19],as shown in Fig.5,is used for evaluating the switching performance of the DUT.In Fig.5,CVR is the coaxial current shunt,Vdcis the power supply voltage,Rgis the external gate resistance,Lis a load inductor,Vdriveis the driver voltage,and Cdcis a capacitor bank.In order to accurately characterize the transient process in the DUT with an inductive load,parasitic parameters in the circuit must be optimized[20].A1.2 kV SiC Schottky diode is chosen as freewheeling diode paralleled with a load inductor of344μH.A42.3μF capacitor bank(nine 4.7μF capacitors in parallel)is used to ensure a constant DC voltage(VDC)during the DUT switching process.The CVR(SSDN-414-01)is used to accurately measure the current(Id)of the DUT while a Tektronix voltage probe is used to obtain Vds signal during the switching transients.The current and voltage are displayed and stored using Tektronix Digital Oscilloscope(DOP 4104B-L)with 0.4 ns sampling interval.
本文編號(hào)：3360760
【文章來源】：微納電子技術(shù). 2020,57(08)北大核心
【文章頁數(shù)】：8 頁
【部分圖文】：
90～490 K內(nèi)開關(guān)損耗的變化趨勢(shì)比較
As shown in Fig.4,threshold voltage(Vth)of the three devices increases when temperatures decrease.In Fig.4,Vdsis source-drain voltage of the SiC MOSFETs,and Vceis collector-emitter voltage of the Si IGBT.However,Vthof the SiC MOSFETs increases about 4.5 V from500 K to 90 K,which is much larger than that of the Si IGBT(about 2.3 V).It has been reported that the Vthincrease is related to trapped interface electrons[18].Since the SiO2-SiC interface is much worse than the SiO2-Si interface,the temperature effects on threshold voltage of the 4H-SiC MOSFETs are more serious at low temperature com-pared with that of the Si IGBT.3 Switching Characterization
The double pulse testing(DPT)circuit including the under-test-device(DUT),a free-wheeling diode(FWD)and a load inductor[19],as shown in Fig.5,is used for evaluating the switching performance of the DUT.In Fig.5,CVR is the coaxial current shunt,Vdcis the power supply voltage,Rgis the external gate resistance,Lis a load inductor,Vdriveis the driver voltage,and Cdcis a capacitor bank.In order to accurately characterize the transient process in the DUT with an inductive load,parasitic parameters in the circuit must be optimized[20].A1.2 kV SiC Schottky diode is chosen as freewheeling diode paralleled with a load inductor of344μH.A42.3μF capacitor bank(nine 4.7μF capacitors in parallel)is used to ensure a constant DC voltage(VDC)during the DUT switching process.The CVR(SSDN-414-01)is used to accurately measure the current(Id)of the DUT while a Tektronix voltage probe is used to obtain Vds signal during the switching transients.The current and voltage are displayed and stored using Tektronix Digital Oscilloscope(DOP 4104B-L)with 0.4 ns sampling interval.
本文編號(hào)：3360760
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