移動(dòng)通信推動(dòng)了射頻微波半導(dǎo)體器件和電路技術(shù)的多項(xiàng)進(jìn)步。這些進(jìn)步不僅促成了移動(dòng)通信革命,也為電路和系統(tǒng)設(shè)計(jì)人員提供了許多各種各樣的用于產(chǎn)品實(shí)現(xiàn)的方法和途徑。設(shè)計(jì)人員通過(guò)簡(jiǎn)單地優(yōu)化GaN集成電路以實(shí)現(xiàn)飽和輸出功率和更高效率的時(shí)代早已過(guò)去,今天的電路和系統(tǒng)工程師必須更多地了解產(chǎn)品開(kāi)發(fā)的整個(gè)過(guò)程。例如器件物理學(xué),建模,表征,電路設(shè)計(jì),體系結(jié)構(gòu)和應(yīng)用,信號(hào)調(diào)制格式,測(cè)量和行業(yè)標(biāo)準(zhǔn)等都是成功設(shè)計(jì)現(xiàn)代接收和傳輸組件所需的。在許多工程和設(shè)計(jì)的決定的時(shí)候,必須考慮到成本平衡,性能和周期時(shí)間以及同時(shí)滿足具有挑戰(zhàn)性的產(chǎn)品規(guī)格。具體的例子比如選擇最佳的半導(dǎo)體技術(shù),器件特性和建模,電路架構(gòu),線性化策略以及整體系統(tǒng)級(jí)考慮。微波晶體管建模的重要性來(lái)自于晶體管是高頻電路中的關(guān)鍵部件,高頻電路是現(xiàn)代無(wú)線通信系統(tǒng)例如移動(dòng)設(shè)備等的核心。目前,我們正在見(jiàn)證無(wú)線通信應(yīng)用的激增以及晶體管技術(shù)的不斷進(jìn)步,這些技術(shù)使高頻晶體管建模成為人們非常感興趣的熱門(mén)話題。此外,GaN HEMT等寬帶隙半導(dǎo)體在電路,設(shè)計(jì)和生產(chǎn)方面都非常出色。與高線性度和高效率功率放大器一樣,AlGaN/GaN HEMT將GaN的材料特性與HEMT的工作原理相結(jié)合... 

【文章來(lái)源】：中國(guó)科學(xué)技術(shù)大學(xué)安徽省 211工程院校 985工程院校

【文章頁(yè)數(shù)】：102 頁(yè)

【學(xué)位級(jí)別】：博士

【文章目錄】：
摘要
ABSTRACT
Notation
Chapter 1 Introduction
    1.1 Device and Structure
    1.2 Types of Models
    1.3 Device Modeling and Selection Criteria
    1.4 EQC-Based Analytical Modeling
    1.5 Research Methodology and Dissertation outline
Chapter 2 Characterization and Model Parameter Extraction
    2.1 Extraction of Parameters for Bare Die
    2.2 Model and Parameters for Packaged Transistor
    2.3 De-embedding Techniques
    2.4 TRL Calibration
    2.5 Procedure of Model Parameter Extraction
    2.6 De-embedding of GaN HEMT Parasitic(Extrinsic) Elements
    2.7 Extraction of the Intrinsic Elements
    2.8 DC Modeling
    2.9 Charge and Capacitance Modeling
    2.10 Large-Signal Model Extraction
    2.11 Model Verification
Chapter 3 An Improved GaN HEMT large-signal Model
    3.1 A New Trapping Large-Signal Model and Extraction Technique
    3.2 Drain Model Equation
    3.3 Angelov Model with Trapping Effect and Large-Signal Model Extraction
    3.4 New I_(ds) equation
        3.4.1 Improve Electro-Thermal Effect
        3.4.2 Trapping Temperature Effect
Chapter 4 Power Amplifier Design and Model Verification
    4.1 Classes RF Power Amplifiers
    4.2 Device Model Validation
    4.3 Doherty Power Amplifier LS Model Verification
Chapter 5 2D Material Black Phosphorus and RTD
    5.1 Device Fabrication
    5.2 Device Characterization
    5.3 Existing Models of Negative Resistance Devices for Diodes
        5.3.1 Piecewise linear model
        5.3.2 Piecewise linear model
        5.3.3 Gaussian-exponential combination model
        5.3.4 Physics-based model
    5.4 New Model for BP RTD
Chapter 6 Conclusions and Future Directions
    6.1 Conclusions
    6.2 Future Directions
References
Appendix A
Acknowledgements
List of Publications



本文編號(hào)：3342452