成功制備出2.6μmGaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半導(dǎo)體激光器.利用分子束外延設(shè)備（MBE）生長出器件的材料結(jié)構(gòu).為了得到更好的光學(xué)質(zhì)量,將量子阱的生長溫度優(yōu)化至500℃,并將量子阱的壓應(yīng)變調(diào)節(jié)為1.3%.制備了脊寬100μm、腔長1.5mm的激光單管器件.在未鍍膜下該激光器實(shí)現(xiàn)了最大328mW室溫連續(xù)工作,閾值電流密度為402A/cm²,在脈沖工作模式下,功率達(dá)到700mW. 

【文章來源】：紅外與毫米波學(xué)報. 2017,36(03)北大核心EISCICSCD

【文章頁數(shù)】：4 頁

【部分圖文】：

型量子阱激光器材料外延結(jié)構(gòu)和能帶示意圖

the200nmSiO2insulationlayerdepositedbyPECVD．Afterthatthep-sideTi/Pt/Auelectrodewasformedbymagnetismsputtersystem．Figure4showsthescanningelectronmi-croscope(SEM)cross-sectionimageofthelaser．Then-sideOhmcontactswererealizedbyfast-annealingthee-vaporatedAuGeNi/Aufilmafterthewaferswerethinnedto180μm．Finallythewaferswerecleavedintosinglee-mitters，andallthelaserdevicesweremountedp-sidedownoncopperheatsinkswithindiumsolder．Fig．4SEMimageofthecross-sectionofthelaserdiode圖4激光器剖面的掃描電子顯微鏡(SEM)照片2ＲesultsanddiscussionAllthelaserperformancewasmeasuredwithoutfac-etcoatingatroomtemperature(20℃)．Themeasure-mentsoflasersoutputpowerweredonebyapyroelectricdetectorandtheemissionspectrawerescannedusingaFouriertransforminfraredspectroscopy(FTIＲ)system．Figure5showsthelaseropticalpower-current-voltage(P-I-V)curve，wallplugefficiency(WPE)andcorre-spondingemissionspectrum(at2Ainjectioncurrent)inCWregime．Thecentralwavelengthwasupto2．6μmwithalowthresholdcurrentdensityofJth=402A/cm2andaslopeefficiencyof0．137W/A．Outputpowerreachedupto328mWattheinjectioncurrentof3．8A，thenasthecurrentincreasedfurthertheoutputpowerwaslimitedforthereasonofheataccumulation．ThemaximumvalueofWPEis7．24%at1．5A，andthereisstillroomforimprovementthroughthereductionofseriesresistances(Ｒs)whichwas0．28Ωbynow．Byreduc-ingAlcompositionofthecladdinglayersandextrapro-cessionafterthepolishingofn-sidesubstra

ingAlcompositionofthecladdinglayersandextrapro-cessionafterthepolishingofn-sidesubstrate，theＲswillbereducedfurthertoimprovetheWPE［15］．Figure6showstheoutputpowercharacteristicofthedeviceoper-atinginpulsecondition(100μscurrentpulsesata1kHzrepetitionrate)．Thelaseremittedashighas700mWopticalpoweroccurredat7．5Afrombothfacetsinpulsemodewhichishighenoughforgassensingapplica-tion．Fig．5P-I-VandWPEcharacteristicsofthelaseremittingatI=2AintheCWmodeatＲTwithuncoatedfacets圖5激光器室溫連續(xù)工作模式下的光功率-電流-電壓關(guān)系和不同電流下的插頭效率以及在注入電流I=2A時激光器的激射譜Theemissionspectraandcentralwavelengthagainstcurrent(λ-I)characteristicsaredepictedinFig．7．Fromtheλ-Icurvewecanclearlyfigureoutthatthewavelengthshiftedlinearlytowardsthelongerwavelengthasthedrivingcurrentincreased．Theslopeofthecurvewasfittedtobe22nm/A．Thecentralwavelengthred-shiftedfrom2．6136μmto2．6268μmwhentheinjec-tioncurrentraisedfrom1．7Ato2．3Amainlyduetothethermaleffectwhichbroughtabouttheelongatingcavityanddecreasingbandgap［16］．259

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期刊論文
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