We investigate the effects of NO annealing and forming gas（FG） annealing on the electrical properties of a SiO₂/SiC interface by low-temperature conductance measurements.With nitrogen passivation,the density of interface states(D_IT) is significantly reduced in the entire energy range,and the shift of flatband voltage,△V_FB,is effectively suppressed to less than 0.4 V.However,very fast states are observed after NO annealing and the response frequencies are higherth... 

【文章來源】：Journal of Semiconductors. 2016,37(02)CSCD

【文章頁數(shù)】：7 頁


本文編號(hào)：3304740