The body current lowering effect of 130 nm partially depleted silicon-on-insulator（PDSOI） input/output（I/O）n-type metal-oxide-semiconductor field-effect transistors（NMOSFETs） induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain current I_b/I_d is also investigated.Theoretical analysis and TCAD simulation results indicate that the physical mechanism of body current lowering effect is the reduction of maximum lat... 

【文章來源】：Chinese Physics Letters. 2017,34(01)SCICSCD

【文章頁數】：4 頁


本文編號：3265110