A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×1010cm·Hz^1/2·W^-... 

【文章來源】：Chinese Physics B. 2017,26(01)EISCI

【文章頁(yè)數(shù)】：5 頁(yè)


本文編號(hào)：3204026