Waveguide-integrated Ge/Si heterostructure avalanche photodetectors（APDs） were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-chargemultiplication（SACM） using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage（V_b） of such a device is 19 V at reverse bias and dark current appears to be 0.71 μA at 90% of the V_b. The device with ... 

【文章來源】：Chinese Physics B. 2016,25(05)EISCI

【文章頁數(shù)】：4 頁


本文編號(hào)：3191659