In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO₂ mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO₂ hard mask has the R₀A of 9.7×10⁶ Ω·cm²,while the detector using the photore... 

【文章來(lái)源】：Chinese Physics B. 2017,26(04)

【文章頁(yè)數(shù)】：4 頁(yè)


本文編號(hào)：3077419