Two kinds of InAs/GaAs quantum dot（QD） structures are grown by molecular beam epitaxy in formation–dissolution–regrowth method with different in-situ annealing and regrowth processes. The densities and sizes of quantum dots are different for the two samples. The variation tendencies of PL peak energy, integrated intensity, and full width at half maximum versus temperature for the two samples are analyzed, respectively. We find the anomalous temperature dependence of the InAs/GaAs quantum dots an... 

【文章來(lái)源】：Chinese Physics B. 2017年06期

【文章頁(yè)數(shù)】：6 頁(yè)

【文章目錄】：
1. Introduction
2. Material growth and characterizations
3. Results and discussion
4. Conclusions and perspectives



本文編號(hào)：2927569