發(fā)布時(shí)間：2020-12-09 19:13

　　A scalable large-signal model of AlGa N/Ga N High electron mobility transistors（HEMTs）suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current（Ids） formulation with a geometry-dependent thermal resistance（Rth） and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance（gm）,which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identi... 

【文章來(lái)源】：Chinese Journal of Electronics. 2017年05期 第952-959頁(yè)

【文章頁(yè)數(shù)】：8 頁(yè)

【文章目錄】：
1. Drain-source current
2. Geometry-dependent thermal resistance
3. Trapping effect dispersive model
4. Extrinsic and intrinsic parasitic parameters


【參考文獻(xiàn)】：
期刊論文
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[2]An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges[J]. LIU Linsheng.  Chinese Journal of Electronics. 2014(04)
[3]基于GaN HEMT的1.5-3.5GHz寬帶平衡功率放大器設(shè)計(jì)[J]. 冷永清,張立軍,曾云,魯輝,鄭占旗,張國(guó)梁,彭偉,彭亞濤,官勁.  電子學(xué)報(bào). 2013(04)
[4]AlGaN/GaN高電子遷移率晶體管解析模型[J]. 楊燕,王平,郝躍,張進(jìn)城,李培咸.  電子學(xué)報(bào). 2005(02)



本文編號(hào)：2907351