Characterization of vertical Au/β-Ga 2 O 3 single-crystal Sc
發(fā)布時(shí)間：2020-12-06 21:08
High-resistivity β-Ga2O3 thin films were grown on Si-doped n-type conductive β-Ga2O3 single crystals by molecular beam epitaxy（MBE）.Vertical-type Schottky diodes were fabricated,and the electrical properties of the Schottky diodes were studied in this letter.The ideality factor and the series resistance of the Schottky diodes were estimated to be about1.4 and 4.6×106 Ω.The ionized donor concentration and the spreading voltage in the Schottky...
【文章來(lái)源】：Chinese Physics B. 2016年01期 第761-765頁(yè)
【文章頁(yè)數(shù)】：5 頁(yè)
本文編號(hào)：2902031
【文章來(lái)源】：Chinese Physics B. 2016年01期 第761-765頁(yè)
【文章頁(yè)數(shù)】：5 頁(yè)
本文編號(hào)：2902031
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