單軸應(yīng)變Si NMOSFET模型及模擬技術(shù)研究
發(fā)布時間：2019-07-08 09:53
【摘要】：為了進(jìn)一步提高半導(dǎo)體器件的性能,除了改進(jìn)器件結(jié)構(gòu)外,各種新材料與新技術(shù)被不斷地應(yīng)用到器件的設(shè)計(jì)制造中。由于應(yīng)變Si材料載流子遷移率高、帶隙可調(diào),且應(yīng)變Si技術(shù)與傳統(tǒng)的Si工藝兼容等優(yōu)點(diǎn),其已成為高速高性能器件與電路研究與應(yīng)用的重要技術(shù)之一。在應(yīng)變Si技術(shù)中,相對于雙軸應(yīng)變,單軸應(yīng)變更適用于CMOS集成電路制造,在高速高性能集成電路領(lǐng)域具有廣闊的發(fā)展空間和應(yīng)用前景。然而,單軸應(yīng)變Si技術(shù)的引入使得器件性能獲得提升的同時,其I-V特性、C-V特性、亞閾區(qū)特性、柵電流特性等與傳統(tǒng)的Si器件相比呈現(xiàn)了新的變化,如果僅通過修改已有的Si器件模型參數(shù)值的方法難以描述出現(xiàn)的所有新特性,并且描述出的電學(xué)特性總有一些不自洽存在,相應(yīng)的SPICE仿真精度也難以達(dá)到應(yīng)用要求。因此,必須開發(fā)基于應(yīng)變Si技術(shù)機(jī)理的器件模型來描述新的電學(xué)特性,提高模型精度,同時控制模型復(fù)雜度,從而更好地應(yīng)用于應(yīng)變Si集成電路的SPICE仿真。為此,本文從單軸應(yīng)變Si技術(shù)提升器件性能的機(jī)理出發(fā),基于基本的器件物理方程,對單軸應(yīng)變Si器件的直流特性、瞬態(tài)特性、交流特性模型,以及亞閾區(qū)特性模型、柵電流特性模型進(jìn)行了系統(tǒng)、深入的研究,同時對新建的模型通過仿真器外掛實(shí)現(xiàn)仿真的方法進(jìn)行了研究,開展的主要研究工作和所取得的主要成果為:1、對單軸應(yīng)變Si NMOSFET基本器件結(jié)構(gòu)及應(yīng)變Si技術(shù)性能提升機(jī)理進(jìn)行了深入研究,在分析了單軸應(yīng)力對有效質(zhì)量和散射幾率影響的基礎(chǔ)上,建立了能準(zhǔn)確反映器件物理本質(zhì)的單軸應(yīng)變Si NMOSFET載流子遷移率模型。同時給出了閾值電壓與應(yīng)力強(qiáng)度的關(guān)系,以及短溝道效應(yīng)、漏致勢壘降低效應(yīng)、窄溝道效應(yīng)以及襯偏效應(yīng)等對閾值電壓的影響,最終建立了完整的閾值電壓模型。2、在建立了遷移率模型和閾值電壓模型的基礎(chǔ)上,基于器件不同的工作區(qū)域,從基本的漂移擴(kuò)散方程出發(fā),分別推導(dǎo)求解了溝道電流方程。其中對于亞閾區(qū)電流模型,基于常規(guī)采用有效溝道厚度近似方法建立的亞閾區(qū)電流模型存在精度不能滿足要求的問題,提出并采用求解亞閾區(qū)反型電荷方法建立了亞閾區(qū)電流模型。同時將所建模型的仿真結(jié)果與實(shí)驗(yàn)結(jié)果進(jìn)行了比較,驗(yàn)證了模型的可行性。所建模型可以準(zhǔn)確地模擬單軸應(yīng)變Si NMOSFET電學(xué)特性,適用于單軸應(yīng)變Si NMOSFET的集成電路設(shè)計(jì)與仿真。3、針對當(dāng)前主流SPICE電荷模型尚未考慮應(yīng)力因素,提出并分別建立了基于應(yīng)力的單軸應(yīng)變Si NMOSFET積累區(qū)、耗盡區(qū)、亞閾區(qū)及反型區(qū)的電荷模型,同時通過平滑函數(shù),最終獲得了具有連續(xù)性的單軸應(yīng)變Si NMOSFET的16個微分電容模型。模型揭示了應(yīng)力對相關(guān)電容的作用與影響,并將微分電容的仿真結(jié)果與實(shí)驗(yàn)結(jié)果進(jìn)行了比較,驗(yàn)證了所建模型的正確性。同時對相關(guān)電容與應(yīng)力強(qiáng)度、偏置電壓、溝道長度、柵極摻雜濃度等的關(guān)系進(jìn)行了分析研究。并且建立了寄生元件模型、襯底結(jié)電荷與電容模型以及模型參數(shù)的溫度依賴效應(yīng)模型。4、為了解決主流SPICE柵電流模型僅通過公式擬合的方法應(yīng)用于單軸應(yīng)變Si NMOSFET而導(dǎo)致機(jī)制缺失及影響精度的問題,本章在深入分析熱載流子?xùn)烹娏骷皷潘泶╇娏鳟a(chǎn)生的微觀物理機(jī)制基礎(chǔ)上,提出并分別建立了包含應(yīng)力作用的單軸應(yīng)變Si NMOSFET熱載流子?xùn)烹娏骷皷潘泶╇娏髂Ｐ�。模型考慮了熱載流子面密度、注入效率、溢出幾率、隧穿幾率等影響,同時對柵電流與應(yīng)力強(qiáng)度、溝道摻雜濃度、柵源電壓、漏源電壓等的關(guān)系,以及TDDB(經(jīng)時擊穿)壽命與柵源電壓的關(guān)系進(jìn)行了分析研究。5、在建立直流特性、瞬態(tài)特性、交流特性模型,以及亞閾區(qū)特性模型、柵電流特性模型的過程中,引入了應(yīng)力強(qiáng)度參數(shù),使得所建立的模型能直觀地反映出電學(xué)特性與應(yīng)力強(qiáng)度、應(yīng)力類型等的關(guān)系,并且模型物理意義明確,有利于應(yīng)變Si NMOSFET器件的分析和設(shè)計(jì)。6、基于單軸應(yīng)變Si NMOSFET等效電路、器件參數(shù)、器件方程,采用verilogA語言實(shí)現(xiàn)了可以被SPICE仿真器外掛的器件模型文件,實(shí)現(xiàn)了與SPICE資源共享的單軸應(yīng)變Si器件和電路的仿真。該方法開發(fā)靈活,利于模型的進(jìn)一步改進(jìn)和升級。利用課題組同步開發(fā)的參數(shù)提取軟件ParaPlus++提取了模型參數(shù),通過仿真結(jié)果與器件測試結(jié)果比較,驗(yàn)證了所建模型的正確性,實(shí)現(xiàn)了主流仿真器精確進(jìn)行單軸應(yīng)變Si器件和電路仿真的問題。
文內(nèi)圖片：
圖片說明：MOSFET溝道長度等比例縮小趨勢圖
[Abstract]:In order to further improve the performance of the semiconductor device, various new materials and new technologies are constantly applied to the design and manufacture of the device in addition to the improved device structure. Because of the high carrier mobility and the tunable band gap of the strained Si material, and the strain Si technology is compatible with the traditional Si process, it has become one of the important technologies of high-speed high-performance device and circuit research and application. In that strain-Si technology, the uniaxial strain is adapt to the manufacture of a CMOS integrated circuit with respect to the biaxial strain, and has wide development space and application prospect in the field of high-speed high-performance integrated circuits. However, the introduction of the uniaxial strain Si technology makes the performance of the device improved, and the I-V characteristic, the C-V characteristic, the sub-threshold region characteristic, the gate current characteristic, and the like exhibit a new change compared to the conventional Si device, If only the method of modifying the existing Si device model parameter values is difficult to describe all the new characteristics that appear, and the electrical characteristics described are always self-consistent, the corresponding SPICE simulation accuracy is difficult to meet the application requirements. Therefore, a device model based on the mechanism of strain-Si technology must be developed to describe the new electrical characteristics, to improve the accuracy of the model, and to control the complexity of the model, so as to better apply to the SPICE simulation of the strained Si integrated circuit. In this paper, based on the basic device physical equation, the DC characteristic, the transient characteristic, the AC characteristic model, the sub-threshold region characteristic model and the grid current characteristic model of the single-axis strained Si device are studied based on the basic device physical equation. In this paper, a deep research is carried out, and the simulation method of the new model is studied. The main research work and the main results are as follows:1. The basic device structure of the single-axis strained Si NMOSFET and the mechanism of the strain-Si technology are studied deeply. Based on the analysis of the effect of uniaxial stress on the effective mass and the scattering probability, a single-axis strained Si NMOSFET carrier mobility model which can accurately reflect the physical essence of the device is established. The relationship between the threshold voltage and the stress intensity, the effect of the short channel effect, the leakage-induced potential barrier, the narrow channel effect and the bias effect on the threshold voltage are also given, and a complete threshold voltage model is finally established. Based on the establishment of the mobility model and the threshold voltage model, the channel current equation is derived from the basic drift diffusion equation based on different working regions of the device. In the sub-threshold region current model, the sub-threshold region current model is established based on the problem that the accuracy of the sub-threshold region current model which is established by using the effective channel thickness approximation method does not meet the requirements. The simulation results of the model are compared with the experimental results, and the feasibility of the model is verified. The model can accurately simulate the electrical characteristics of the single-axis strained Si NMOSFET, and is suitable for the integrated circuit design and simulation of the single-axis strained Si NMOSFET. The charge model of the subthreshold region and the inversion region is obtained, and the 16 differential capacitance models of the single-axis strained Si NMOSFET with continuity are finally obtained through the smoothing function. The effect and effect of the stress on the relevant capacitance are revealed, and the simulation results of the differential capacitance are compared with the experimental results, and the correctness of the model is verified. The relationship between the relative capacitance and the stress intensity, the bias voltage, the channel length, the gate doping concentration and so on is analyzed. And the temperature dependence effect model of the parasitic element model, the substrate junction charge and the capacitance model and the model parameters is established. On the basis of in-depth analysis of the micro-physical mechanism of the hot carrier gate current and the gate tunneling current, the thermal carrier gate current and the gate tunneling current model of the single-axis strained Si NMOSFET with stress are proposed and established, respectively. the model considers the influence of the hot carrier surface density, the injection efficiency, the overflow probability, the tunneling probability and the like, and at the same time, the relationship between the gate current and the stress intensity, the channel doping concentration, the gate source voltage, the drain source voltage and the like is taken into consideration, and the relationship between the life of the TDDB (with time breakdown) and the grid source voltage is analyzed and studied. In the process of establishing the DC characteristic, the transient characteristic, the AC characteristic model and the sub-threshold region characteristic model and the grid current characteristic model, the stress intensity parameter is introduced, so that the established model can intuitively reflect the relationship between the electrical characteristics and the stress intensity, the stress type, and the like, and the physical significance of the model is clear, the analysis and the design of the strained Si NMOSFET device are facilitated, and 6, based on the equivalent circuit of the single-axis strained Si NMOSFET, the device parameters and the device equation, The device model file which can be externally hung by the SPICE simulator is realized by using veriloA language, and the simulation of the single-axis strained Si device and the circuit with the SPICE resource sharing is realized. The method has flexible development and is beneficial to further improvement and upgrading of the model. The model parameters are extracted by using the parameter extraction software ParasPlus + + developed by the research group, and the correctness of the model is verified by comparing the simulation results with the device test results, and the problem of accurate single-axis strain Si device and circuit simulation of the main flow simulator is realized.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2015
【分類號】：TN386
本文編號：2511506
文內(nèi)圖片：
圖片說明：MOSFET溝道長度等比例縮小趨勢圖
[Abstract]:In order to further improve the performance of the semiconductor device, various new materials and new technologies are constantly applied to the design and manufacture of the device in addition to the improved device structure. Because of the high carrier mobility and the tunable band gap of the strained Si material, and the strain Si technology is compatible with the traditional Si process, it has become one of the important technologies of high-speed high-performance device and circuit research and application. In that strain-Si technology, the uniaxial strain is adapt to the manufacture of a CMOS integrated circuit with respect to the biaxial strain, and has wide development space and application prospect in the field of high-speed high-performance integrated circuits. However, the introduction of the uniaxial strain Si technology makes the performance of the device improved, and the I-V characteristic, the C-V characteristic, the sub-threshold region characteristic, the gate current characteristic, and the like exhibit a new change compared to the conventional Si device, If only the method of modifying the existing Si device model parameter values is difficult to describe all the new characteristics that appear, and the electrical characteristics described are always self-consistent, the corresponding SPICE simulation accuracy is difficult to meet the application requirements. Therefore, a device model based on the mechanism of strain-Si technology must be developed to describe the new electrical characteristics, to improve the accuracy of the model, and to control the complexity of the model, so as to better apply to the SPICE simulation of the strained Si integrated circuit. In this paper, based on the basic device physical equation, the DC characteristic, the transient characteristic, the AC characteristic model, the sub-threshold region characteristic model and the grid current characteristic model of the single-axis strained Si device are studied based on the basic device physical equation. In this paper, a deep research is carried out, and the simulation method of the new model is studied. The main research work and the main results are as follows:1. The basic device structure of the single-axis strained Si NMOSFET and the mechanism of the strain-Si technology are studied deeply. Based on the analysis of the effect of uniaxial stress on the effective mass and the scattering probability, a single-axis strained Si NMOSFET carrier mobility model which can accurately reflect the physical essence of the device is established. The relationship between the threshold voltage and the stress intensity, the effect of the short channel effect, the leakage-induced potential barrier, the narrow channel effect and the bias effect on the threshold voltage are also given, and a complete threshold voltage model is finally established. Based on the establishment of the mobility model and the threshold voltage model, the channel current equation is derived from the basic drift diffusion equation based on different working regions of the device. In the sub-threshold region current model, the sub-threshold region current model is established based on the problem that the accuracy of the sub-threshold region current model which is established by using the effective channel thickness approximation method does not meet the requirements. The simulation results of the model are compared with the experimental results, and the feasibility of the model is verified. The model can accurately simulate the electrical characteristics of the single-axis strained Si NMOSFET, and is suitable for the integrated circuit design and simulation of the single-axis strained Si NMOSFET. The charge model of the subthreshold region and the inversion region is obtained, and the 16 differential capacitance models of the single-axis strained Si NMOSFET with continuity are finally obtained through the smoothing function. The effect and effect of the stress on the relevant capacitance are revealed, and the simulation results of the differential capacitance are compared with the experimental results, and the correctness of the model is verified. The relationship between the relative capacitance and the stress intensity, the bias voltage, the channel length, the gate doping concentration and so on is analyzed. And the temperature dependence effect model of the parasitic element model, the substrate junction charge and the capacitance model and the model parameters is established. On the basis of in-depth analysis of the micro-physical mechanism of the hot carrier gate current and the gate tunneling current, the thermal carrier gate current and the gate tunneling current model of the single-axis strained Si NMOSFET with stress are proposed and established, respectively. the model considers the influence of the hot carrier surface density, the injection efficiency, the overflow probability, the tunneling probability and the like, and at the same time, the relationship between the gate current and the stress intensity, the channel doping concentration, the gate source voltage, the drain source voltage and the like is taken into consideration, and the relationship between the life of the TDDB (with time breakdown) and the grid source voltage is analyzed and studied. In the process of establishing the DC characteristic, the transient characteristic, the AC characteristic model and the sub-threshold region characteristic model and the grid current characteristic model, the stress intensity parameter is introduced, so that the established model can intuitively reflect the relationship between the electrical characteristics and the stress intensity, the stress type, and the like, and the physical significance of the model is clear, the analysis and the design of the strained Si NMOSFET device are facilitated, and 6, based on the equivalent circuit of the single-axis strained Si NMOSFET, the device parameters and the device equation, The device model file which can be externally hung by the SPICE simulator is realized by using veriloA language, and the simulation of the single-axis strained Si device and the circuit with the SPICE resource sharing is realized. The method has flexible development and is beneficial to further improvement and upgrading of the model. The model parameters are extracted by using the parameter extraction software ParasPlus + + developed by the research group, and the correctness of the model is verified by comparing the simulation results with the device test results, and the problem of accurate single-axis strain Si device and circuit simulation of the main flow simulator is realized.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2015
【分類號】：TN386
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