【摘要】：自20世紀(jì)60年代起,電力電子技術(shù)的出現(xiàn)為提高能源利用率,實現(xiàn)電能變換以及實施各國的新能源戰(zhàn)略開辟了新的道路。現(xiàn)今,電力電子技術(shù)的發(fā)展極大的幫助了人類實現(xiàn)對自然資源的合理、高效以及可持續(xù)利用。 目前,以IGBT (Insulated Gate Bipolat Transistor,絕緣柵雙極型晶體管)和功率MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor,金屬-氧化層?xùn)艌鲂?yīng)管)為首的大功率器件是各種電力電子裝置的核心。當(dāng)電力電子裝置出現(xiàn)故障時,經(jīng)常是由于電力電子器件發(fā)生損壞。因此,透徹的了解電路系統(tǒng)并合理地使用功率器件,不但可以規(guī)避裝置故障風(fēng)險,也可以更好地利用器件的電壓、電流裕量,提高器件利用率。反過來,研究器件在不同應(yīng)用條件下的失效模式,則可以更好地理解器件工作原理以及失效情況,提高器件實際應(yīng)用壽命。 近年來,對器件的失效分析已經(jīng)成為電力電子領(lǐng)域中一個研究熱點。本論文基于現(xiàn)代電力電子裝置中應(yīng)用最廣的IGBT器件,利用靜態(tài)測試儀371b、SEM (Scanning Electron Microscope,掃描電子顯微鏡)、EDX (Energy Dispersive X-Ray Spectroscopy、能量色散X射線光譜儀)、FIB (Focused Ion beam,聚焦離子束)切割、TEM (Thermal Emmision Microscope,高精度熱成像分析儀)等多種分析手段對模塊應(yīng)用當(dāng)中失效的IGBT芯片進(jìn)行電特性分析、芯片解剖并完成失效分析,并基于相應(yīng)的失效模式提出了封裝改進(jìn)方案。 1.對于柵極失效的情況,本論文先經(jīng)過電特性測試完成預(yù)分析,并利用THEMOS分析出柵極漏電流通路,找到最小點并進(jìn)行失效原因分析,針對相應(yīng)原因提出改進(jìn)方案。 2.針對開通與關(guān)斷瞬態(tài)過電流失效,采用研磨、劃片等手段進(jìn)行芯片的解剖。并用SEM與EDX對芯片損傷程度進(jìn)行評估分析,以文獻(xiàn)為參考進(jìn)行失效原因分析,利用saber仿真進(jìn)行失效原因驗證。 3.針對通態(tài)過電流失效模式,采用解剖分析來評估損傷情況,探究失效原因,并采用電感鉗位電路進(jìn)行實驗驗證。 4.針對過電壓失效模式,采用芯片解剖方式來分析失效點以及失效情況,基于文獻(xiàn)歸納并總結(jié)出傳統(tǒng)失效原因,并通過大量實驗得出基于封裝的失效原因,最后采用saber仿真加以驗證。
[Abstract]:Since 1960s, the emergence of power electronics technology has opened up a new way to improve energy efficiency, realize electric energy conversion and implement the new energy strategy of various countries. Nowadays, the development of power electronics technology has greatly helped human beings to realize the rational, efficient and sustainable utilization of natural resources. At present, high-power devices headed by IGBT (Insulated Gate Bipolat Transistor, insulated gate bipolar transistors and power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide gate field effect transistors) are the core of various power electronic devices. When the power electronic device fails, it is often due to the damage of the power electronic device. Therefore, a thorough understanding of the circuit system and the rational use of power devices can not only avoid the fault risk of the device, but also make better use of the voltage and current margin of the device and improve the utilization rate of the device. On the other hand, by studying the failure mode of the device under different application conditions, the working principle and failure situation of the device can be better understood, and the practical application life of the device can be improved. In recent years, the failure analysis of devices has become a research focus in the field of power electronics. In this paper, based on the most widely used IGBT devices in modern power electronic devices, the electrical characteristics of IGBT chips which have failed in module applications are analyzed by using static tester 371b,), EDX (Energy Dispersive X-Ray Spectroscopy, (Scanning Electron Microscope, scanning electron microscope), EDX (Energy Dispersive X-Ray Spectroscopy, energy dispersive X-ray spectrometer), FIB (Focused Ion beam, focused ion beam (, TEM (Thermal Emmision Microscope, high precision thermal imaging analyzer) and other analytical methods. The chip is dissected and the failure analysis is completed, and an improved package scheme is proposed based on the corresponding failure mode. 1. For the case of gate failure, this paper first completes the pre-analysis through the electrical characteristic test, and uses THEMOS to analyze the leakage current circuit of the gate, finds out the minimum point and analyzes the failure cause, and puts forward the improvement scheme according to the corresponding reason. two銆，

本文編號：2501952