金屬銅輔助刻蝕制備黑硅的研究
發(fā)布時(shí)間：2019-06-10 22:46
【摘要】：黑硅的制備及其在太陽(yáng)能電池上的有效應(yīng)用,是進(jìn)一步降低光伏電池制造成本以及提升光電轉(zhuǎn)換效率的有效途徑之一。金屬輔助刻蝕法是最近興起的,具有操作方便、成本低廉、適合大規(guī)模制造的黑硅制備方法。本文對(duì)此方法進(jìn)行了改進(jìn),利用金屬銅輔助單步濕法刻蝕,在多晶硅及單晶硅上成功制備出黑硅,并系統(tǒng)研究了其反應(yīng)機(jī)理。相較于常用的金屬輔助刻蝕法,本文的研究意義在于：(1)金屬銅相較于銀、金、鉑等其他貴金屬成本更低；(2)金屬銅易去除,不易殘留于硅片中形成雜質(zhì)和新的復(fù)合中心；(3)減反效果優(yōu)異；(4)可制成多種類形貌,并可通過反應(yīng)條件進(jìn)行調(diào)控。本文的主要內(nèi)容包括：在多晶硅上,我們通過對(duì)雙氧水、氫氟酸、硝酸銅濃度以及反應(yīng)溫度的調(diào)節(jié)來調(diào)控黑硅形貌,當(dāng)反應(yīng)溫度為60℃,[H2O2]:[HF]:[Cu(NO3)2]=2M:6M:0.08M時(shí),刻蝕出的黑硅樣品具有最低反射率,在300nm～1000nm波段內(nèi)達(dá)到了5%的水平。此外,我們還研究了硅片刻蝕速率與雙氧水、氫氟酸、硝酸銅濃度以及反應(yīng)溫度的關(guān)系,通過對(duì)實(shí)驗(yàn)數(shù)據(jù)進(jìn)行擬合,發(fā)現(xiàn)影響反應(yīng)速率的主要因素為反應(yīng)物濃度、銅/硅接觸面積以及反應(yīng)的活化能。對(duì)于黑硅的各類形貌,我們用空穴注入模型予以了定性解釋。在單晶硅上,我們成功制備出具有倒金字塔結(jié)構(gòu)的表面形貌,其反射率在寬波段內(nèi)同樣達(dá)到了5%-6%的水平。倒金字塔結(jié)構(gòu)形成的機(jī)理與堿制絨類似,原因在于單晶硅不同的晶面被氧化的難易程度不同,[100]面的氧化和刻蝕速率高于[110]、[111]等面,因此形成了各向異性的刻蝕。此外,對(duì)于用金屬銀和金屬銅腐蝕所形成納米結(jié)構(gòu)的差異,我們用Ag+/Ag和Cu2+/Cu氧化還原勢(shì)的不同予以了解釋。
[Abstract]:The preparation of black silicon and its effective application in solar cells are one of the effective ways to further reduce the manufacturing cost of photovoltaic cells and improve the photoelectric conversion efficiency. Metal assisted etch method is a recently rising method, which has the advantages of convenient operation and low cost, and is suitable for large-scale fabrication of black silicon. In this paper, this method has been improved. Black silicon has been successfully prepared on polysilicon and single silicon by copper assisted single step wet etch, and its reaction mechanism has been systematically studied. The significance of this paper is as follows: (1) compared with silver, gold, platinum and other precious metals, the cost of copper is lower than that of other precious metals such as silver, gold, platinum and so on. (2) Copper is easy to remove and is not easy to remain in the silicon wafer to form impurities and new composite centers; (3) the anti-reaction effect is excellent; (4) many kinds of morphology can be prepared and can be controlled by reaction conditions. The main contents of this paper are as follows: on polysilicon, we regulate the morphology of black silicon by adjusting the concentration of hydrogen peroxide, hydrofluoric acid, copper nitrate and reaction temperature, when the reaction temperature is 60 鈩，
本文編號(hào)：2496790
[Abstract]:The preparation of black silicon and its effective application in solar cells are one of the effective ways to further reduce the manufacturing cost of photovoltaic cells and improve the photoelectric conversion efficiency. Metal assisted etch method is a recently rising method, which has the advantages of convenient operation and low cost, and is suitable for large-scale fabrication of black silicon. In this paper, this method has been improved. Black silicon has been successfully prepared on polysilicon and single silicon by copper assisted single step wet etch, and its reaction mechanism has been systematically studied. The significance of this paper is as follows: (1) compared with silver, gold, platinum and other precious metals, the cost of copper is lower than that of other precious metals such as silver, gold, platinum and so on. (2) Copper is easy to remove and is not easy to remain in the silicon wafer to form impurities and new composite centers; (3) the anti-reaction effect is excellent; (4) many kinds of morphology can be prepared and can be controlled by reaction conditions. The main contents of this paper are as follows: on polysilicon, we regulate the morphology of black silicon by adjusting the concentration of hydrogen peroxide, hydrofluoric acid, copper nitrate and reaction temperature, when the reaction temperature is 60 鈩，
本文編號(hào)：2496790
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