一種新型SiC SBD的高溫反向恢復(fù)特性
發(fā)布時間：2019-06-02 06:02
【摘要】：與傳統(tǒng)硅基功率二極管相比,碳化硅肖特基勢壘二極管(SiC SBD)可提高開關(guān)頻率并大幅減小開關(guān)損耗,同時有更高的耐壓范圍。設(shè)計并制作了具有場限環(huán)結(jié)終端和Ti肖特基接觸的1.2 kV/30 A SiC SBD器件,研究了該SiC SBD在100~300℃時的反向恢復(fù)特性。實驗結(jié)果表明,溫度每上升100℃,SiC SBD反向電壓峰值增幅為5%左右,而反向恢復(fù)電流與反向恢復(fù)時間受溫度影響不大;溫度每升高50℃,反向恢復(fù)損耗功率峰值降低5%。實驗結(jié)果表明該SiC SBD在高溫下能夠穩(wěn)定工作,且具有良好的反向恢復(fù)特性,適用于衛(wèi)星、航空和航天探測、石油以及地?zé)徙@井探測等需要大功率、耐高溫和高速器件的領(lǐng)域。
[Abstract]:Compared with the traditional silicon-based power diode, silicon carbide Schottky barrier diode (SiC SBD) can increase the switching frequency and greatly reduce the switching loss, and has a higher voltage range. A 1.2 kV/30 A SiC SBD device with field limited loop junction terminal and Ti Schottky contact is designed and fabricated. The reverse recovery characteristics of the SiC SBD at 100 鈮，
本文編號：2490884
[Abstract]:Compared with the traditional silicon-based power diode, silicon carbide Schottky barrier diode (SiC SBD) can increase the switching frequency and greatly reduce the switching loss, and has a higher voltage range. A 1.2 kV/30 A SiC SBD device with field limited loop junction terminal and Ti Schottky contact is designed and fabricated. The reverse recovery characteristics of the SiC SBD at 100 鈮，
本文編號：2490884
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