【摘要】：與硅雙極型功率器件相比,LDMOS微波功率器件具有頻帶寬、輸出功率高、功率增益高、線性度好、熱穩(wěn)定性好、沒有二次擊穿等諸多優(yōu)點,在要求高功率、高增益、高線性度的通信領(lǐng)域應(yīng)用較為廣泛,特別是在移動基站上,LDMOS是首選的微波功率器件,占據(jù)了約90%的市場份額[1]。隨著LDMOS微波功率器件的設(shè)計越來越優(yōu)化、加工技術(shù)和手段越來越成熟、產(chǎn)品可靠性水平不斷提高,LDMOS又在向脈沖大功率應(yīng)用領(lǐng)域方向發(fā)展,隨著需求的提高,適合脈沖應(yīng)用的LDMOS新產(chǎn)品也在不斷被開發(fā)出來,并不斷地被推向市場。許多研究機構(gòu)和公司都在開展LDMOS器件的研制和開發(fā)工作,特別著名的,如Infineon、NXP、Freescale等公司都擁有自主的LDMOS產(chǎn)品研發(fā)生產(chǎn)線,并開發(fā)出比較完善的系列化產(chǎn)品。本文基于脈沖器件應(yīng)用的市場需求,進行P波段LDMOS微波脈沖功率放大器的設(shè)計工作進行討論研究。在對P波段LDMOS微波功率放大器設(shè)計過程中,論文將討論三個方面的內(nèi)容。第一方面首先討論了 LDMOS微波功率器件工藝原理,具體內(nèi)容里將在第二章節(jié)闡述;LDMOS微波功率器件是放大器設(shè)計的關(guān)鍵元器件,因此它是放大器設(shè)計的依據(jù),所以第二個方面主要討論了設(shè)計LDMOS微波功率器件內(nèi)匹配電路模型,這些內(nèi)容都將在第三章節(jié)里詳細討論。第三方面主要討論了 P波段LDMOS脈沖功率放大器的設(shè)計和研制,主要包括如下內(nèi)容:放大器的設(shè)計原理和電路、放大器輸入輸出匹配網(wǎng)絡(luò)的設(shè)計、放大器的可靠性設(shè)計、放大器的穩(wěn)定性研究以及放大器的最終測試結(jié)果分析等幾方面的內(nèi)容,在論文的第四章和第五章節(jié)里具體闡述這些內(nèi)容。最終研制設(shè)計的P波段微波功率放大器在4XX-6XXMHz頻帶內(nèi)脈沖功率輸出大于200W,功率增益高于48dB,附加效率高于55%。
[Abstract]:Compared with silicon bipolar power device, LDMOS microwave power device has many advantages, such as wide frequency band, high output power, high power gain, good linearity, good thermal stability, no secondary breakdown and so on. High linearity communication is widely used, especially in mobile base stations, LDMOS is the preferred microwave power device, accounting for about 90% of the market share [1]. With the increasing optimization of the design of LDMOS microwave power devices, the processing technology and means are becoming more and more mature, the reliability level of products is improving, and LDMOS is developing in the field of pulse high power applications, with the improvement of demand. New LDMOS products suitable for pulse applications are also being developed and put on the market. Many research institutions and companies are carrying out the research and development of LDMOS devices, especially famous companies such as Infineon,NXP,Freescale have their own LDMOS product research and development production line, and have developed more perfect series products. Based on the market demand of pulse device application, the design of P-band LDMOS microwave pulse power amplifier is discussed and studied in this paper. In the design of P-band LDMOS microwave power amplifier, three aspects will be discussed in this paper. In the first aspect, the technological principle of LDMOS microwave power device is discussed, which will be described in the second chapter. LDMOS microwave power device is the key component of amplifier design, so it is the basis of amplifier design, so the second aspect mainly discusses the design of LDMOS microwave power device internal matching circuit model. These contents will be discussed in detail in the third chapter. The third aspect mainly discusses the design and development of P-band LDMOS pulse power amplifier, including the design principle and circuit of amplifier, the design of amplifier input-output matching network, the reliability design of amplifier, The stability of the amplifier and the analysis of the final test results of the amplifier are described in chapter 4 and chapter 5. Finally, the P-band microwave power amplifier is developed and designed, the pulse power output is more than 200W, the power gain is higher than 48dB, and the additional efficiency is more than 55% in the 4XX-6XXMHz band.
【學(xué)位授予單位】：東南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN722.75

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