【摘要】：為了降低傳統(tǒng)帶隙基準(zhǔn)源的功耗和面積,提出了一種新型基于電流模式高階曲率修正的帶隙基準(zhǔn)電壓源電路。通過(guò)改進(jìn)的電流模式曲率校正方法實(shí)現(xiàn)高階溫度補(bǔ)償,并且通過(guò)集電極電流差生成絕對(duì)溫度成正比PTAT(Proportional To Absolute Temperature)電流,因此所需電阻以及雙極型晶體管BJT(Bipolar Junction Transistor)數(shù)量更少。采用標(biāo)準(zhǔn)0.35μm CMOS技術(shù)對(duì)提出電路進(jìn)行了具體實(shí)現(xiàn)。測(cè)量結(jié)果顯示,溫度在-40℃～130℃之間時(shí),電路溫度系數(shù)為6.85×10~(-6)/℃,且能產(chǎn)生508.5 mV的基準(zhǔn)電壓。相比其他類(lèi)似電路,當(dāng)供電電源為3.3 V時(shí),提出電路的整體靜態(tài)電流消耗僅為9.8μA,面積僅為0.09 mm~2。
[Abstract]:In order to reduce the power consumption and area of the traditional bandgap reference source, a new bandgap voltage reference circuit based on current mode high order curvature correction is proposed. The high order temperature compensation is realized by the improved current mode curvature correction method, and the absolute temperature is proportional to the PTAT (Proportional To Absolute Temperature) current by the collector current difference. As a result, the required resistance and the number of Bipolar transistor BJT (Bipolar Junction Transistor) are even smaller. The standard 0.35 渭 m CMOS technology is used to realize the proposed circuit. The measurement results show that when the temperature is between-40 鈩，

本文編號(hào)：2483668