【摘要】：針對(duì)碳化硅(SiC)金屬氧化物半導(dǎo)體場效應(yīng)晶體管(MOSFET)在100 kHz低頻(LF)功放應(yīng)用中出現(xiàn)的串?dāng)_問題,考慮SiC MOSFET寄生參數(shù)分階段研究串?dāng)_過程,分析關(guān)鍵參數(shù)對(duì)串?dāng)_電壓尖峰的影響,從而提出降低串?dāng)_尖峰的若干思路。為抑制串?dāng)_現(xiàn)象,采用無源抑制方法進(jìn)行驅(qū)動(dòng)設(shè)計(jì),該驅(qū)動(dòng)設(shè)計(jì)簡單可靠,具有較高工程應(yīng)用價(jià)值。最后,進(jìn)行驅(qū)動(dòng)對(duì)比實(shí)驗(yàn),采用所提驅(qū)動(dòng)設(shè)計(jì)對(duì)串?dāng)_的抑制效果顯著,正、負(fù)向串?dāng)_電壓尖峰比基本驅(qū)動(dòng)電路分別降低73%和70%。
[Abstract]:Aiming at the crosstalk problem of MOSFET in 100kHz low-frequency(LF)power amplifier application, SiCMOSFET parasitic parameters are considered to study the crosstalk process in stages, analyze the influence of key parameters on crosstalk voltage spikes, and some ideas are put forward. In order to suppress crosstalk phenomenon, passive suppression method is adopted for driving design. The drive design is simple and reliable and has high engineering application value. Finally錛，

本文編號(hào)：2473417