【摘要】：自從有機場效應(yīng)晶體管(OFETs)誕生以來就受到了廣泛關(guān)注,由于具有制備工藝簡單、成本低廉、適合低溫大面積制造、可與柔性襯底兼容等諸多優(yōu)勢,使其在電子器件中有著巨大應(yīng)用潛力。它可以用于智能卡、傳感器、電子紙、射頻識別標簽等,為大規(guī)模集成電路、平板顯示驅(qū)動等提供了新的解決方案,成為有機電子器件中重要的研究領(lǐng)域。OFETs是注入型的器件,載流子傳輸?shù)暮妥⑷攵紝ζ淦骷阅芷鹬陵P(guān)重要的影響。一方面,在有源層制備過程中進行襯底加熱是一種行之有效的改善薄膜形態(tài)的手段,可以進而優(yōu)化載流子傳輸;另一方面,在電極與有源層間插入修飾材料可以有效地提高載流子注入。因此,本文主要從上述兩個方面,采用襯底加熱,分別在基于p型和n型半導體材料的器件中使用電極修飾材料,研究了不同的襯底溫度條件和電極修飾層厚度對器件性能的影響。具體研究內(nèi)容如下:(1)制備了基于并五苯為有源層、PMMA為絕緣層的底柵頂接觸結(jié)構(gòu)OFETs器件,在并五苯薄膜的真空蒸鍍過程中控制襯底溫度分別保持在15、30、60、90?C。結(jié)果顯示在60?C襯底溫度條件下器件性能最好,器件的有效遷移率從15?C的2.9×10-4 cm2/V·s提高到3.39×10-3cm2/V·s。通過理論分析,分析了60?C襯底溫度下器件性能達到最優(yōu)的原因。(2)基于襯底加熱的最佳優(yōu)化條件,制備了基于并五苯和PMMA分別有源層和絕緣層的底柵頂接觸結(jié)構(gòu)OFETs器件,并在Al電極和并五苯有源層間插入過渡金屬氧化物Mo O3。結(jié)果顯示,與未插入Mo O3修飾層的器件相比,器件的有效遷移率達到2.25×10-1cm2/V·s,提高了66倍,閾值電壓也由12V降到了3V。這是由于Mo O飾層有效地降低了Al電極和并五苯之間的注入勢壘,降低了接觸電阻,從而提高了載流子注入。(3)探索制備了基于n型材料P13為有源層的底柵頂接觸OFET器件,采用了OLEDs中常用的對陰極注入起增強作用的Cs2CO3、Cs CH2COOH作為修飾材料,研究這兩種修飾層對P13器件性能的影響。制備的未修飾P13器件展示了較典型的n型輸出特性,而Cs2CO3修飾后的器件性能有所提高,Cs CH2COOH修飾后的器件未獲得穩(wěn)定的性能,并對實驗結(jié)果進行了合理的理論分析。
[Abstract]:Airport effect transistor (OFETs) has been paid more and more attention since its birth. It has many advantages, such as simple preparation process, low cost, suitable for low temperature and large area manufacturing, compatibility with flexible substrate and so on. It has great application potential in electronic devices. It can be used in smart cards, sensors, electronic paper, radio frequency identification tags and so on. It provides a new solution for large scale integrated circuits, flat panel display drivers, and becomes an important research field in organic electronic devices. OFETs is an injection type device. Both carrier transport and injection play an important role in the performance of the device. On the one hand, substrate heating in the process of active layer preparation is an effective means to improve the morphology of thin films, which can optimize carrier transport. On the other hand, the insertion of modified materials between the electrode and the active layer can effectively improve the carrier injection. Therefore, from the above two aspects, the substrate heating is used to modify the electrode in the devices based on p-type and n-type semiconductor materials, respectively. The effects of substrate temperature and electrode modification layer thickness on the device performance were investigated. The main contents are as follows: (1) the bottom gate top contact structure OFETs device based on pentaben as active layer and PMMA as insulating layer was fabricated. The substrate temperature was kept at 15,30,60,90 鈩，

本文編號：2471825