【摘要】：當人類第一次睜開眼睛的時候,自然賦予人類的光電探測器“眼睛”,就這樣開始工作了。第一個真正意義上的光電探測器是在光電效應提出之后制作出來的。與日俱增的市場需求促使光電探測器的研究快速發(fā)展,例如軍用設備市場強勁需求導致紅外探測的研究和生產(chǎn)快速增長。微電子工藝技術和新材料的迅猛發(fā)展,使得光電探測器的探測范圍從紫外到紅外區(qū)域均有大量相關的研究和應用。但是,為了獲取更好的性能,更寬的探測范圍,研究人員集中精力致力于提高器件性能。本文將著重討論如何采用拓撲絕緣體材料和采用表面等離子共振增強技術制備新型高性能可見——近紅外光電探測器,具體內容如下：1.拓撲絕緣體是一類內部絕緣,表面呈現(xiàn)金屬特性的材料,該材料表面對旋光有響應,基于以上特性考慮用拓撲絕緣體碲化銻制備光電探測器。本文是采用分子束外延的方法制備拓撲絕緣體碲化銻薄膜,并利用ARPES, XRD等方法表征碲化銻薄膜,發(fā)現(xiàn)所制備的碲化銻薄膜單晶性能良好。采用微電子加工工藝制備基于該材料的近紅外光電探測器。通過半導體測試系統(tǒng)的電學表征發(fā)現(xiàn),利用該撲絕緣體制備的近紅外光電探測器具有很高的光電導增益、光響應,分別達到27.4,21.7AW-1。2.表面等離子共振技術是采用金屬納米顆�；蛘呤茄趸锛{米顆粒修飾器件的表面,當尺寸滿足一定條件的時候,可以增強器件對光的吸收,從而提高器件的性能。本文首先采用化學氣相沉積法制備碲化鋅納米線,并用水熱法將一部分納米線修飾金納米顆粒,將修飾前后的碲化鋅納米線制備成光電導型的綠光探測器。通過光電表征分析發(fā)現(xiàn),修飾前后碲化鋅納米制備而成的光電探測器的性能得到提升,光電流增加了7倍。此外,基于有限元分析法的理論模擬證明表面等離子共振對器件性能具有增強的作用,這與實驗相結果相符合。本文通過以上兩點,證明了拓撲絕緣體在光電探測領域有巨大潛力,同時也證明表面等離子修飾對器件性能提高具有一定的作用。
[Abstract]:When humans opened their eyes for the first time, the natural photodetector "eyes" began to work. The first photodetector in the real sense was made after the photoelectric effect was proposed. The growing market demand has led to the rapid development of photodetectors, such as the strong demand in the military equipment market, which has led to rapid growth in the research and production of infrared detectors. With the rapid development of microelectronic technology and new materials, the detection range of photodetectors from ultraviolet to infrared region has a lot of related research and application. However, in order to achieve better performance and wider detection range, researchers focus on improving device performance. This paper focuses on how to fabricate a novel high performance visible near infrared photodetector using topological insulator materials and surface plasmon resonance enhancement technology. The main contents are as follows: 1. Topological insulator is a kind of materials with internal insulation and metal characteristics. The surface of the material is responsive to optical rotation. Based on the above characteristics, antimony telluride as a topological insulator is considered to be used to prepare photodetectors. The antimony telluride thin film was prepared by molecular beam epitaxy (MBE). The antimony telluride thin film was characterized by ARPES, XRD and other methods. It was found that the single crystal properties of the antimony telluride thin film were good. The near infrared photodetector based on the material is fabricated by microelectronic processing technology. Through the electrical characterization of the semiconductor test system, it is found that the near infrared photodetector prepared by this system has very high photoconductive gain and light response of 27.4 and 21.7AW / 1.2, respectively. Surface plasmon resonance (SPR) technique uses metal nanoparticles or oxide nanoparticles to modify the surface of the device. When the size of the device meets certain conditions, the absorption of light can be enhanced and the performance of the device can be improved. In this paper, zinc telluride nanowires were prepared by chemical vapor deposition, and some gold nanoparticles were modified by hydrothermal method, and zinc telluride nanowires before and after modification were prepared as photoconductive green photodetectors. It was found that the performance of the photodetector prepared by zinc telluride nano-meter before and after modification was improved and the photocurrent was increased by 7 times. In addition, the theoretical simulation based on finite element analysis shows that surface plasmon resonance can enhance the performance of the device, which is in agreement with the experimental results. In this paper, it is proved that the topological insulator has great potential in the field of photoelectric detection, and that the surface plasma modification can improve the performance of the device to a certain extent.
【學位授予單位】：合肥工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TN215
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本文編號：2467631