【摘要】：應(yīng)用1.4 Me V電子束對(duì)單向可控硅晶圓芯片進(jìn)行固定注量率輻照,通過(guò)觸發(fā)電流和少子壽命表征輻照效應(yīng),研究了退火工藝對(duì)輻照效應(yīng)的影響。結(jié)果表明:電子輻照縮短單向可控硅少子壽命,增大觸發(fā)電流。經(jīng)350℃退火后觸發(fā)電流恢復(fù)到輻照前水平,少子壽命雖有一定恢復(fù),但遠(yuǎn)比輻照前短。在試驗(yàn)的注量范圍內(nèi)k系數(shù)為常數(shù),退火后k系數(shù)與注量相關(guān),小注量時(shí)較小。常溫存放對(duì)輻照效應(yīng)有較大影響,長(zhǎng)時(shí)間存放不利于200℃退火而有利于300℃退火。
[Abstract]:One-way thyristor wafer was irradiated with a fixed dose rate by 1.4 Me V electron beam. The effect of annealing process on radiation effect was studied by characterizing the irradiation effect by triggering current and minority ion lifetime. The results show that electron irradiation shortens the minority carrier lifetime of unidirectional thyristor and increases the trigger current. After annealing at 350 鈩，

本文編號(hào)：2466272