記憶器件等效電路模型及電學(xué)特性研究
發(fā)布時(shí)間：2019-04-26 04:10
【摘要】：憶阻器、憶容器和憶感器作為三種新型的記憶器件,延伸了經(jīng)典的電子電路基本理論。由于記憶器件其特有的“記憶”特性,其潛在價(jià)值引起了廣泛關(guān)注,已在非易失性存儲(chǔ)器、人工神經(jīng)網(wǎng)絡(luò)、生物醫(yī)學(xué)、圖像處理和混沌電路中得到應(yīng)用。但記憶器件的制備受限于精密的納米技術(shù)和苛刻的實(shí)驗(yàn)環(huán)境,其商品化還需漫長(zhǎng)的過程。為了便于分析和研究記憶器件的電學(xué)特性及其相關(guān)應(yīng)用,根據(jù)記憶器件的實(shí)際電學(xué)特性來構(gòu)建其等效電路模型是一種行之有效的方法。本文所研究的內(nèi)容主要分為記憶器件等效電路模型的構(gòu)建和記憶器件電學(xué)特性的研究,主要包含以下幾個(gè)部分:(1)本文以惠普憶阻器為基礎(chǔ),詳細(xì)地介紹了其物理結(jié)構(gòu)與記憶機(jī)理。綜述了記憶器件的國(guó)內(nèi)外研究現(xiàn)狀以及其應(yīng)用領(lǐng)域與前景。從電路學(xué)理論的完備性出發(fā)證明了憶阻器的存在,由于記憶效應(yīng)是納米材料普遍存在的一種現(xiàn)象,從而憶容器和憶感器的相關(guān)概念相繼提出。(2)根據(jù)憶阻器的賦定關(guān)系,采用通用的電子元件搭建了一個(gè)最簡(jiǎn)憶阻器模擬器,該電路僅包含5個(gè)元器件,但遺憾的是只能實(shí)現(xiàn)接地形式。作為一個(gè)二端口器件,憶阻器應(yīng)該可以與其他電子元器件實(shí)現(xiàn)任意的連接,為解決這個(gè)缺陷,對(duì)該電路進(jìn)行改進(jìn)設(shè)計(jì)了一種浮地型憶阻器模擬器,并對(duì)其電路進(jìn)行硬件實(shí)現(xiàn),實(shí)驗(yàn)測(cè)試結(jié)果很好的顯示了憶阻器其典型的收縮遲滯環(huán)。(3)為了在同一個(gè)電路中模擬三種記憶器件的電學(xué)行為,結(jié)合線性電壓控制浮地阻抗電路和電流積分器,構(gòu)建了一種結(jié)構(gòu)簡(jiǎn)單的通用的記憶器件模擬器。在相同的拓?fù)浣Y(jié)構(gòu)下,該模擬器電路通過接入不同類型的元器件,能分別模擬憶阻器、憶容器和憶感器的電學(xué)行為。該模擬器浮地且采用通用的電子元件搭建,因而方便在簡(jiǎn)單的實(shí)驗(yàn)環(huán)境下分析和研究記憶器件的特性及其應(yīng)用電路。(4)對(duì)于浮地型憶阻器模擬器,本文研究分析了激勵(lì)信號(hào)的類型、頻率和幅值的變化對(duì)其電學(xué)特性的影響。而記憶器件作為一個(gè)受內(nèi)部狀態(tài)變量控制的動(dòng)態(tài)器件,其內(nèi)部狀態(tài)變量的初始值對(duì)器件電學(xué)特性的影響尤為重要。本文以分段線性憶感器的數(shù)學(xué)模型為基礎(chǔ),從對(duì)稱性和非對(duì)稱性兩種分段線性模型出發(fā),研究了內(nèi)部狀態(tài)變量在不同的初始值下對(duì)憶感器電學(xué)特性的影響。(5)將本文所提出的通用的記憶器件模擬器分別替換RLC串聯(lián)電路中的電阻、電感和電容元件,得到三種新型的串聯(lián)諧振電路,從時(shí)域和頻域兩方面出發(fā)研究分析了記憶器件對(duì)電路的影響,對(duì)于記憶器件的潛在應(yīng)用提供了重要的指導(dǎo)作用。
[Abstract]:As three new memory devices, memory receptacle, memory container and memory sensor extend the classical electronic circuit theory. Due to its unique "memory" characteristics, the potential value of memory devices has attracted extensive attention and has been used in non-volatile memory, artificial neural networks, biomedicine, image processing and chaotic circuits. However, the manufacture of memory devices is limited to precise nanotechnology and harsh experimental environment, and its commercialization still needs a long process. In order to analyze and study the electrical characteristics of memory devices and their related applications, it is an effective method to construct the equivalent circuit model according to the actual electrical characteristics of memory devices. The contents of this thesis are mainly divided into the construction of equivalent circuit model of memory devices and the study of electrical characteristics of memory devices. The main contents are as follows: (1) this paper is based on Hewlett-Packard memory resistor (Hewlett-Packard). Its physical structure and memory mechanism are introduced in detail. The research status, application fields and prospects of memory devices at home and abroad are reviewed. Based on the completeness of circuit theory, the existence of memory resistor is proved. Because memory effect is a common phenomenon in nanomaterials, the related concepts of memory container and memory sensor have been put forward one after another. (2) according to the definite relation of memory resistor, the concept of memory receptacle and memory sensor have been put forward one after another. A minimum memory resistor simulator is built by using general electronic components. The circuit contains only five components, but unfortunately only earthing form can be realized. As a two-port device, the memory device should be able to connect with other electronic components at will. In order to solve this problem, a floating memory resistor simulator is designed and implemented in hardware. The experimental results show the typical contraction hysteresis loop of the resistor. (3) in order to simulate the electrical behavior of three memory devices in the same circuit, the floating impedance circuit and the current integrator are controlled by the linear voltage, and the current integrator is used to simulate the electrical behavior of the three kinds of memory devices in the same circuit. A general memory device simulator with simple structure is constructed. Under the same topology, the circuit of the simulator can simulate the electrical behavior of the resistor, the receptacle and the memory sensor by connecting different types of components. The simulator is floating and built with general electronic components, so it is convenient to analyze and study the characteristics of memory devices and their application circuits in a simple experimental environment. (4) for floating memory resistor simulators, it is convenient to analyze and study the characteristics of memory devices and their application circuits in a simple experimental environment. In this paper, the influence of the type, frequency and amplitude of excitation signal on its electrical properties is studied and analyzed. As a dynamic device controlled by internal state variables, the influence of the initial value of internal state variables on the electrical characteristics of memory devices is particularly important. Based on the mathematical model of piecewise linear memory sensor, this paper starts from two kinds of piecewise linear models: symmetry and asymmetry. The influence of internal state variables on the electrical characteristics of the memory sensor under different initial values is studied. (5) the universal memory device simulator proposed in this paper is replaced with the resistance, inductance and capacitor elements in the RLC series circuit, respectively. Three new series resonant circuits are obtained. The influence of memory devices on the circuit is studied in both time domain and frequency domain, which provides important guidance for the potential application of memory devices.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN60
本文編號(hào)：2465737
[Abstract]:As three new memory devices, memory receptacle, memory container and memory sensor extend the classical electronic circuit theory. Due to its unique "memory" characteristics, the potential value of memory devices has attracted extensive attention and has been used in non-volatile memory, artificial neural networks, biomedicine, image processing and chaotic circuits. However, the manufacture of memory devices is limited to precise nanotechnology and harsh experimental environment, and its commercialization still needs a long process. In order to analyze and study the electrical characteristics of memory devices and their related applications, it is an effective method to construct the equivalent circuit model according to the actual electrical characteristics of memory devices. The contents of this thesis are mainly divided into the construction of equivalent circuit model of memory devices and the study of electrical characteristics of memory devices. The main contents are as follows: (1) this paper is based on Hewlett-Packard memory resistor (Hewlett-Packard). Its physical structure and memory mechanism are introduced in detail. The research status, application fields and prospects of memory devices at home and abroad are reviewed. Based on the completeness of circuit theory, the existence of memory resistor is proved. Because memory effect is a common phenomenon in nanomaterials, the related concepts of memory container and memory sensor have been put forward one after another. (2) according to the definite relation of memory resistor, the concept of memory receptacle and memory sensor have been put forward one after another. A minimum memory resistor simulator is built by using general electronic components. The circuit contains only five components, but unfortunately only earthing form can be realized. As a two-port device, the memory device should be able to connect with other electronic components at will. In order to solve this problem, a floating memory resistor simulator is designed and implemented in hardware. The experimental results show the typical contraction hysteresis loop of the resistor. (3) in order to simulate the electrical behavior of three memory devices in the same circuit, the floating impedance circuit and the current integrator are controlled by the linear voltage, and the current integrator is used to simulate the electrical behavior of the three kinds of memory devices in the same circuit. A general memory device simulator with simple structure is constructed. Under the same topology, the circuit of the simulator can simulate the electrical behavior of the resistor, the receptacle and the memory sensor by connecting different types of components. The simulator is floating and built with general electronic components, so it is convenient to analyze and study the characteristics of memory devices and their application circuits in a simple experimental environment. (4) for floating memory resistor simulators, it is convenient to analyze and study the characteristics of memory devices and their application circuits in a simple experimental environment. In this paper, the influence of the type, frequency and amplitude of excitation signal on its electrical properties is studied and analyzed. As a dynamic device controlled by internal state variables, the influence of the initial value of internal state variables on the electrical characteristics of memory devices is particularly important. Based on the mathematical model of piecewise linear memory sensor, this paper starts from two kinds of piecewise linear models: symmetry and asymmetry. The influence of internal state variables on the electrical characteristics of the memory sensor under different initial values is studied. (5) the universal memory device simulator proposed in this paper is replaced with the resistance, inductance and capacitor elements in the RLC series circuit, respectively. Three new series resonant circuits are obtained. The influence of memory devices on the circuit is studied in both time domain and frequency domain, which provides important guidance for the potential application of memory devices.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN60
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