【摘要】：隨著無線電事業(yè)以及電子技術(shù)的發(fā)展和應(yīng)用,電子設(shè)備所處環(huán)境的電磁干擾越來越嚴(yán)重;模擬集成電路信號(hào)處理已經(jīng)進(jìn)入高速度、低功耗、高集成度階段,電子設(shè)備內(nèi)部器件之間相互干擾越來越嚴(yán)重。電流鏡作為電流模式電路中的核心模塊之一,通過提高鏡像電流源的抗電磁干擾能力,改善了電流模式電路的電磁兼容特性。電流模式電路相對(duì)于電壓模式電路具有速度高、非線性失真小、動(dòng)態(tài)范圍大等優(yōu)勢(shì),因而電流模式電路近來得到越來越廣泛的應(yīng)用。電流鏡是電流模式電路的基本單元電路,電流鏡性能的優(yōu)良與否直接關(guān)系到電流模式電路能否正常工作。電磁干擾信號(hào)施加于基本電流鏡時(shí),電磁干擾信號(hào)會(huì)被復(fù)制到輸出端,使得與電流鏡輸出端相連的各級(jí)器件都受到電磁干擾的影響;由于MOS管具有非線性特點(diǎn),使得干擾信號(hào)疊加到直流偏置輸入時(shí),電流鏡的輸出端產(chǎn)生了直流偏移,甚至使電路不能正常工作。本文分析了產(chǎn)生“電荷泵”效應(yīng)的基本原理,總結(jié)了產(chǎn)生“電荷泵”效應(yīng)的兩個(gè)條件。通過采取減小電流鏡輸出端干擾信號(hào)峰-峰值和去除“電荷泵”所引起的直流偏置兩個(gè)措施增強(qiáng)了新型電流鏡的抗電磁干擾能力。設(shè)計(jì)過程是分析已有的電流鏡,包括基本電流鏡、柵極濾波電流鏡、柵極間低通濾波電流鏡、直流反饋電流鏡和低通濾波電流鏡,總結(jié)了需要改進(jìn)和優(yōu)化的問題,利用遺傳演化結(jié)構(gòu)設(shè)計(jì)出了抗電磁干擾能力更強(qiáng)的電流鏡。基本方案是利用直流反饋結(jié)構(gòu)、低通濾波結(jié)構(gòu)、電流分流負(fù)反饋結(jié)構(gòu)和半共源共柵負(fù)反饋等結(jié)構(gòu)實(shí)現(xiàn)了電流鏡結(jié)構(gòu)優(yōu)化的目的。T-Spice仿真結(jié)果表明,本文提出的抗電磁干擾電流鏡具有更好的抗電磁干擾能力。而且穩(wěn)定性也得到了很大的提高。
[Abstract]:With the development and application of radio and electronic technology, the electromagnetic interference in the environment of electronic equipment becomes more and more serious. Analog integrated circuit signal processing has entered the stage of high speed, low power consumption and high integration, and the interferences between the internal devices of electronic devices are becoming more and more serious. As one of the core modules in the current-mode circuit, the current mirror improves the electromagnetic compatibility of the current-mode circuit by improving the anti-electromagnetic interference ability of the mirror current source. Compared with the voltage-mode circuit, the current-mode circuit has the advantages of high speed, small nonlinear distortion and large dynamic range, so the current-mode circuit has been more and more widely used recently. The current mirror is the basic unit circuit of the current mode circuit. Whether the performance of the current mirror is good or not is directly related to the normal operation of the current mode circuit. When the EMI signal is applied to the basic current mirror, the EMI signal will be copied to the output, so that all kinds of devices connected to the output end of the current mirror will be affected by the EMI. Because of the non-linear characteristics of the MOS transistor, when the interference signal is superimposed on the DC bias input, the output end of the current mirror produces a DC offset, and even makes the circuit not work properly. In this paper, the basic principle of "charge pump" effect is analyzed, and two conditions for producing "charge pump" effect are summarized. The anti-electromagnetic interference ability of the new current mirror is enhanced by reducing the peak-peak value of the interference signal at the output end of the current mirror and removing the DC bias caused by the "charge pump". The design process is to analyze the existing current mirror, including basic current mirror, gate filter current mirror, low pass filter current mirror between gates, DC feedback current mirror and low pass filter current mirror. The problems that need to be improved and optimized are summarized. A current mirror with stronger resistance to electromagnetic interference is designed by using the genetic evolution structure. The basic scheme is to optimize the current mirror structure by using DC feedback structure, low pass filter structure, current shunt negative feedback structure and semi-common source common gate negative feedback structure. The simulation results of T-Spice show that the current mirror structure is optimized. The anti-EMI current mirror proposed in this paper has better anti-EMI capability. And the stability has also been greatly improved.
【學(xué)位授予單位】：河北大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN702

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本文編號(hào)：2457252