【摘要】：簡要介紹了晶圓鍵合技術(shù)在發(fā)光二極管(LED)應(yīng)用中的研究背景,分別論述了常用的黏合劑鍵合技術(shù)、金屬鍵合技術(shù)和直接鍵合技術(shù)在高亮度垂直LED制備中的研究現(xiàn)狀,包括它們的材料組成和作用、工藝步驟和參數(shù)以及優(yōu)缺點(diǎn)。其中,黏合劑鍵合是一種低溫鍵合技術(shù),且易于應(yīng)用、成本低、引入應(yīng)力小,但可靠性較差;金屬鍵合技術(shù)能提供高熱導(dǎo)、高電導(dǎo)的穩(wěn)定鍵合界面,與后續(xù)工藝兼容性好,但鍵合溫度高,引入應(yīng)力大,易造成晶圓損傷;表面活化直接鍵合技術(shù)能實(shí)現(xiàn)室溫鍵合,降低由于不同材料間熱失配帶來的負(fù)面影響,但鍵合良率有待提高。
[Abstract]:This paper briefly introduces the research background of wafer bonding technology in the application of light emitting diode (LED), and discusses the research status of common adhesive bonding technology, metal bonding technology and direct bonding technology in the preparation of high brightness vertical LED, respectively. Including their material composition and function, process steps and parameters, as well as advantages and disadvantages. Among them, adhesive bonding is a low temperature bonding technology, and easy to use, low cost, low introduction stress, but poor reliability; Metal bonding technology can provide a stable bonding interface with high thermal conductivity and high conductivity, and has good compatibility with the subsequent process, but the bonding temperature is high, the introduction stress is large, and the wafer damage is easy to be caused. Surface activated direct bonding technology can achieve room temperature bonding and reduce the negative effects caused by thermal mismatch between different materials, but the bonding yield needs to be improved.
【作者單位】： 河北工業(yè)大學(xué)電子信息工程學(xué)院;天津市電子材料與器件重點(diǎn)實(shí)驗(yàn)室;中國電子科技集團(tuán)公司第十八研究所;
【基金】：河北省高層次人才資助項(xiàng)目百人計(jì)劃項(xiàng)目(W2013100006) 河北省科技計(jì)劃資助項(xiàng)目(15211017D)
【分類號】：TN312.8

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