【摘要】：隨著航空航天技術(shù)的飛速發(fā)展,越來越多的由CMOS器件和CMOS集成電路構(gòu)成的電子設(shè)備運(yùn)用于航天技術(shù)當(dāng)中,但在空間環(huán)境當(dāng)中,存在著大量的空間粒子和射線,會增加電子設(shè)備失效的風(fēng)險。為提高電子設(shè)備的使用壽命和可靠性能,對抗輻照技術(shù)進(jìn)行更加深入的研究變得異常的重要。本文以NMOS晶體管在電離輻照總劑量效應(yīng)(Total Ionizing Dose,TID)下的輻照缺陷和電流模型為研究課題,具體研究了輻照缺陷(固定電荷和界面態(tài)陷阱)和電流模型的建立方法,并對模型進(jìn)行了驗證與分析。本文基于總劑量輻照理論,分析了總劑量輻照效應(yīng)對NMOS晶體管電學(xué)特性的影響。根據(jù)電路的實(shí)際應(yīng)用情況,對柵極零偏置電壓條件下晶體管的輻照性能模型進(jìn)行研究,設(shè)計出了零偏置條件下的輻照實(shí)驗方案。實(shí)驗分別采用環(huán)形柵和普通柵結(jié)構(gòu)以及不同柵寬的NMOS管進(jìn)行總劑量輻照。通過對實(shí)驗結(jié)果的深入分析,得出總劑量、柵極結(jié)構(gòu)、寬長比對晶體管的亞閾值特性和輸出特性曲線的影響。并采用McWhorter-Winokur的方法對輻照產(chǎn)生的缺陷進(jìn)行了提取,而此方法提取不同寬度的NMOS晶體管的輻照缺陷時,其結(jié)果與寬度存在相關(guān)性,通過對提取原理的分析,本文提出了選取基本寬度作為提取的標(biāo)準(zhǔn)以方便輻照電流模型的建立。本文首先采用了總劑量輻照效應(yīng)下,MIS(Mental-Insulator-Semiconductor)結(jié)構(gòu)的輻照缺陷的建模方法,并對模型中電勢的邊界條件進(jìn)行了詳細(xì)的討論,即使柵極處在零偏置條件下,由于不同材料之間存在功函數(shù)差,仍然會在氧化層中產(chǎn)生附加電場,并影響到整個輻照缺陷的形成,并在模型中加以考慮。然后通過MATLAB程序?qū)δＰ瓦M(jìn)行數(shù)值求解,并討論了不同柵極偏壓,總劑量,氧化層厚度對固定電荷面密度和界面態(tài)密度以及閾值電壓的影響。另外,實(shí)驗所采用的LOCOS(Local Oxidation of Silicon)工藝普通柵NMOS管,輻照后主要關(guān)態(tài)泄漏電流存在于鳥嘴區(qū),而此處氧化層的厚度在不斷變化,將給輻照電流的計算帶來一定的復(fù)雜度�；诖�,本文提出將鳥嘴區(qū)的輻照缺陷等效到柵氧化層中的方法,以減少對電流計算的復(fù)雜程度。最后本文采用提出的輻照缺陷模型和缺陷等效模型以及輻照電流模型的求解結(jié)果對文獻(xiàn)中的實(shí)驗數(shù)據(jù)和本文的實(shí)驗數(shù)據(jù)進(jìn)行了很好的擬合。
[Abstract]:With the rapid development of aerospace technology, more and more electronic devices composed of CMOS devices and CMOS integrated circuits are used in space technology, but there are a lot of space particles and rays in the space environment. Increases the risk of failure of electronic equipment. In order to improve the service life and reliability of electronic equipment, it is very important to carry out more in-depth research on anti-irradiation technology. In this paper, the radiation defects and current models of NMOS transistors under total dose effect of ionizing irradiation (Total Ionizing Dose,TID) are studied, and the methods of establishing radiation defects (fixed charge and interface state traps) and current models are studied in detail. The model is verified and analyzed. Based on the theory of total dose radiation, the effect of total dose irradiation on the electrical properties of NMOS transistor is analyzed in this paper. According to the practical application of the circuit, the radiation performance model of the transistor under the condition of zero bias voltage of gate is studied, and the irradiation experiment scheme under the condition of zero bias is designed. The total dose radiation of ring gate and common gate structure and NMOS tube with different gate width were used in the experiment. The effects of total dose, gate structure and width-length ratio on the sub-threshold characteristics and output characteristic curves of the transistor are obtained by deep analysis of the experimental results. The defects produced by irradiation are extracted by McWhorter-Winokur method. When the irradiated defects of NMOS transistors with different widths are extracted by this method, there is a correlation between the results and the width. Through the analysis of the extraction principle, the radiation defects of NMOS transistors with different widths are extracted by this method. In this paper, the basic width is selected as the extraction standard to facilitate the establishment of radiation current model. In this paper, the modeling method of radiation defects of, MIS (Mental-Insulator-Semiconductor) structure under total dose radiation effect is first adopted, and the boundary conditions of the potential in the model are discussed in detail, even if the gate is in zero bias condition. Due to the difference of work function between different materials, additional electric field will still be produced in the oxide layer, which will affect the formation of the whole irradiation defect and be considered in the model. Then the model is solved numerically by MATLAB program, and the effects of different gate bias, total dose and oxide thickness on the fixed charge surface density, interface state density and threshold voltage are discussed. In addition, the main leakage current of the common gate NMOS tube in the LOCOS (Local Oxidation of Silicon) process after irradiation exists in the bird's mouth region, and the thickness of the oxide layer is constantly changing here, which will bring a certain complexity to the calculation of the radiation current. Based on this, this paper presents a method to reduce the complexity of current calculation by equivalent the irradiation defects in the bird's mouth to the gate oxide. Finally, the results of radiation defect model, defect equivalent model and radiation current model are used to fit the experimental data in the literature and the experimental data in this paper.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386

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9 劉以f，

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