【摘要】：以清潔氣體種類和流量以及污染氣體放氣率為變量,進(jìn)行了單組分清潔氣體的動(dòng)態(tài)氣體鎖(DGL)流場(chǎng)仿真,并以混合清潔氣體的體積比為變量進(jìn)行了多組分清潔氣體DGL流場(chǎng)仿真。仿真結(jié)果表明,DGL抑制率隨清潔氣體流量和分子量的增加而增加,但與污染氣體放氣率的變化無(wú)關(guān)。對(duì)于多組分清潔氣體,當(dāng)大分子量清潔氣體的體積分?jǐn)?shù)增加時(shí),DGL抑制率近似不變。在實(shí)際工程中建議以氫氣和氬氣的混合氣體作為DGL的清潔氣體。當(dāng)清潔氣體流量為6.5Pa·m3·s-1時(shí),約25%的清潔氣體流入硅片室,DGL抑制率約為75%。該仿真結(jié)果為研制極紫外光刻機(jī)DGL提供了依據(jù)。
[Abstract]:The dynamic gas-locked (DGL) flow field of one-component clean gas is simulated by taking the type and flow rate of clean gas and the efflux rate of polluted gas as variables. The multi-component clean gas DGL flow field was simulated with the volume ratio of the mixed clean gas as a variable. The simulation results show that the inhibition rate of DGL increases with the increase of the flow rate and molecular weight of clean gas, but has nothing to do with the change of exhaust rate of polluted gas. For multi-component clean gas, when the volume fraction of high molecular weight clean gas increases, the inhibition rate of DGL is almost unchanged. In practice, it is suggested that the mixture of hydrogen and argon be used as the clean gas of DGL. When the flow rate of clean gas is 6.5Pa 路m ~ 3 路s ~ (- 1), about 25% of clean gas flows into the wafer chamber, and the inhibition rate of DGL is about 75%. The simulation results provide a basis for the development of ultra-ultraviolet lithography (DGL).
【作者單位】： 中國(guó)科學(xué)院光電研究院;北京市準(zhǔn)分子激光工程技術(shù)研究中心;
【基金】：國(guó)家科技重大專項(xiàng)(2012ZX02702007)
【分類號(hào)】：TN305.7

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