硅基混合集成激光器的實(shí)驗(yàn)研究
發(fā)布時(shí)間：2019-03-23 17:09
【摘要】：單片集成度的日益提高,使得光互連技術(shù)在未來的集成光學(xué)發(fā)展中扮演的作用越來越大。在大數(shù)據(jù)、云計(jì)算等新技術(shù)層出不窮的時(shí)代,高速、大容量的信息傳遞需求帶動(dòng)了超高速器件的發(fā)展,硅基光電集成技術(shù)具有的低損耗、高帶寬、低成本和成熟的CMOS工藝兼容性等優(yōu)勢,成為了主要的研究熱點(diǎn)。在片上光互連技術(shù)和硅基光電子技術(shù)不斷更新的背景下,利用有源發(fā)光介質(zhì)與硅基波導(dǎo)器件相集成制備片上混合光源,對(duì)片上全光通信和片上光子器件互連集成有著十分重要的意義。本文基于SOI波導(dǎo)諧振腔結(jié)構(gòu),利用III-V族半導(dǎo)體放大器(SOA)與硅基波導(dǎo)諧振腔構(gòu)成硅基激光器,開展了硅基混合集成激光器的實(shí)驗(yàn)研究。完成測試諧振腔反射譜和激光譜測試系統(tǒng)的搭建,用于對(duì)不同器件的反射率、帶寬和輸出功率進(jìn)行測量,還搭建了低相干模式檢測系統(tǒng)用于檢測雙環(huán)內(nèi)部模式分布。本學(xué)位論文的主要內(nèi)容如下:1.介紹了激光激射的工作原理,諧振腔內(nèi)部模場分布,分析了微環(huán)諧振腔的濾波特性,從理論上構(gòu)建了微環(huán)諧振腔的設(shè)計(jì)模型,為后續(xù)微環(huán)器件的制作與實(shí)驗(yàn)的提供了理論依據(jù)。2.實(shí)驗(yàn)測試和分析了幾種硅基微環(huán)反射腔,實(shí)現(xiàn)了高反射率,低插入損耗的硅基反射腔鏡,激光輸出功率最高可達(dá)6.1mW,消光比在30dB以上。3.實(shí)驗(yàn)研究了雙環(huán)反射腔鏡的模式特性,實(shí)現(xiàn)了輸出模式可選擇的激光器,并通過低相干檢測系統(tǒng)分析了雙環(huán)結(jié)構(gòu)的內(nèi)部模場與波長分裂特性。4.進(jìn)行了 SOA與硅基反射腔鏡端面集成的初步實(shí)驗(yàn)研究,采用金屬鍵合方式制作了硅基混合的有源芯片,通過對(duì)接耦合方式與無源波導(dǎo)的進(jìn)行了光路對(duì)準(zhǔn),測得了四種微環(huán)諧振腔的濾波譜線,并對(duì)下一步的完善實(shí)驗(yàn)提出了改進(jìn)方案。
[Abstract]:With the increasing of monolithic integration, optical interconnection technology plays a more and more important role in the development of integrated optics in the future. In the era of big data, cloud computing and other new technologies, high-speed, large-capacity information transmission needs have driven the development of ultra-high-speed devices, silicon-based optoelectronic integration technology has low loss, high bandwidth, The advantages of low cost and mature CMOS process compatibility have become the main research focus. Under the background of continuous updating of on-chip optical interconnection technology and silicon-based photoelectron technology, an on-chip hybrid light source is fabricated by integrating active light-emitting medium with silicon-based waveguide devices. It is very important to integrate all-on-chip optical communication and on-chip photonic device interconnection. In this paper, based on the structure of SOI waveguide resonator, a silicon-based laser is constructed by using III- V semiconductor amplifier (SOA) and silicon-based waveguide resonator, and the experimental study of Si-based hybrid integrated laser is carried out. In order to measure the reflectivity, bandwidth and output power of different devices, a low coherent mode detection system is built to detect the internal mode distribution of the double-loop, which can be used to measure the reflectivity, bandwidth and output power of different devices. The main contents of this dissertation are as follows: 1. This paper introduces the principle of laser excitation, the distribution of internal mode field in the cavity, analyzes the filtering characteristics of the micro-ring resonator, and constructs the design model of the micro-ring resonator theoretically. It provides a theoretical basis for the fabrication and experiment of subsequent microring devices. 2. Several kinds of Si-based micro-ring reflectors have been experimentally tested and analyzed, and the mirror with high reflectivity and low insertion loss has been realized. The laser output power can reach 6.1 MW and the extinction ratio is above 30dB. 3. The mode characteristics of dual ring reflectometry are studied experimentally and the output mode selectable laser is realized. The internal mode field and wavelength splitting characteristics of the dual loop structure are analyzed by low coherence detection system. 4. A preliminary experimental study on the integration of SOA and silicon-based reflector is carried out. A silicon-based hybrid active chip is fabricated by metal bonding, and the optical alignment between the passive waveguide and the coupling mode is carried out. The filtering spectral lines of four kinds of micro-ring resonators are measured, and an improved scheme for the next step of the experiment is put forward.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN248
本文編號(hào)：2446058
[Abstract]:With the increasing of monolithic integration, optical interconnection technology plays a more and more important role in the development of integrated optics in the future. In the era of big data, cloud computing and other new technologies, high-speed, large-capacity information transmission needs have driven the development of ultra-high-speed devices, silicon-based optoelectronic integration technology has low loss, high bandwidth, The advantages of low cost and mature CMOS process compatibility have become the main research focus. Under the background of continuous updating of on-chip optical interconnection technology and silicon-based photoelectron technology, an on-chip hybrid light source is fabricated by integrating active light-emitting medium with silicon-based waveguide devices. It is very important to integrate all-on-chip optical communication and on-chip photonic device interconnection. In this paper, based on the structure of SOI waveguide resonator, a silicon-based laser is constructed by using III- V semiconductor amplifier (SOA) and silicon-based waveguide resonator, and the experimental study of Si-based hybrid integrated laser is carried out. In order to measure the reflectivity, bandwidth and output power of different devices, a low coherent mode detection system is built to detect the internal mode distribution of the double-loop, which can be used to measure the reflectivity, bandwidth and output power of different devices. The main contents of this dissertation are as follows: 1. This paper introduces the principle of laser excitation, the distribution of internal mode field in the cavity, analyzes the filtering characteristics of the micro-ring resonator, and constructs the design model of the micro-ring resonator theoretically. It provides a theoretical basis for the fabrication and experiment of subsequent microring devices. 2. Several kinds of Si-based micro-ring reflectors have been experimentally tested and analyzed, and the mirror with high reflectivity and low insertion loss has been realized. The laser output power can reach 6.1 MW and the extinction ratio is above 30dB. 3. The mode characteristics of dual ring reflectometry are studied experimentally and the output mode selectable laser is realized. The internal mode field and wavelength splitting characteristics of the dual loop structure are analyzed by low coherence detection system. 4. A preliminary experimental study on the integration of SOA and silicon-based reflector is carried out. A silicon-based hybrid active chip is fabricated by metal bonding, and the optical alignment between the passive waveguide and the coupling mode is carried out. The filtering spectral lines of four kinds of micro-ring resonators are measured, and an improved scheme for the next step of the experiment is put forward.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN248
【參考文獻(xiàn)】
相關(guān)期刊論文 前5條
1 柯青;譚少陽;劉松濤;陸丹;張瑞康;王圩;吉晨;;Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser[J];Journal of Semiconductors;2015年09期
2 艾恩溪;;解讀集成電路產(chǎn)業(yè)發(fā)展推進(jìn)綱要 暢談發(fā)展大計(jì)[J];集成電路應(yīng)用;2014年12期
3 王金章;蔡志平;羅正錢;許惠英;;基于石墨烯可飽和吸收體的脈沖光纖激光器研究進(jìn)展[J];廈門大學(xué)學(xué)報(bào)(自然科學(xué)版);2014年05期
4 周培基;李智勇;俞育德;余金中;;硅基光子集成研究進(jìn)展[J];物理學(xué)報(bào);2014年10期
5 江鵬飛,趙偉瑞,張靜娟,謝福增;窄線寬的外腔半導(dǎo)體激光器[J];激光技術(shù);2004年02期
相關(guān)博士學(xué)位論文 前1條
1 李霞;微環(huán)諧振腔在硅基光子集成器件中應(yīng)用的研究[D];浙江大學(xué);2016年
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