【摘要】：毫米波波段的波長(zhǎng)在1mm~10mm之間,工作頻率在30GHz~300GHz之間。因?yàn)槠漕l率介于微波和紅外之間,所以其最大的特點(diǎn)是波長(zhǎng)短和頻帶寬�；匦胁ǚ糯笃魇且环N基于電子回旋脈塞效應(yīng)的高功率微波器件,由于其具有大功率、寬頻帶的輸出特點(diǎn),近幾年對(duì)于此種器件的研究越來越熱。當(dāng)隨著器件的工作頻率升高時(shí),器件的尺寸共度效應(yīng)和功率容量問題嚴(yán)重制約其發(fā)展的速度。解決此問題的常規(guī)手段是采用高次模式作為腔體中的工作模式,不過這又帶來了模式競(jìng)爭(zhēng)的問題。在毫米波波段因?yàn)槠骷慕Y(jié)構(gòu)更小,這樣模式競(jìng)爭(zhēng)的問題就會(huì)更加激烈。由此而知,研究一種在毫米波波段具有模式選擇性的互作用腔體成為了重中之重。準(zhǔn)光腔是一種側(cè)壁完全開放的結(jié)構(gòu),側(cè)壁的開放使得一些模式從側(cè)壁衍射出去,這種特性使得它具有模式選擇性,能夠很好的解決模式競(jìng)爭(zhēng)帶來的影響。本文研究的是以準(zhǔn)光腔作為互作用腔體的回旋行波放大器件,研究準(zhǔn)光腔對(duì)競(jìng)爭(zhēng)模式的抑制成為重點(diǎn)。主要的工作如下:1、研究制約回旋行波放大器發(fā)展的原因。對(duì)準(zhǔn)光腔結(jié)構(gòu)進(jìn)行分析及理論的研究。深入研究腔體中的高斯波束,并通過推導(dǎo)方程得到腔體中電磁場(chǎng)的分布表達(dá)式。分析準(zhǔn)光腔對(duì)于電磁場(chǎng)的衍射損耗問題,通過對(duì)比圓波導(dǎo)和準(zhǔn)光腔中的色散曲線的密度來確定該結(jié)構(gòu)確實(shí)能對(duì)模式進(jìn)行選擇。為抑制競(jìng)爭(zhēng)模式帶來的影響奠定基礎(chǔ)。2、對(duì)回旋管動(dòng)力學(xué)理論進(jìn)行分析,通過推導(dǎo)得到色散曲線方程。研究截?cái)嘟Y(jié)構(gòu)對(duì)于返波振蕩的抑制。以準(zhǔn)光腔為互作用腔體設(shè)計(jì)工作頻率在140GHz的放大器,建立三維模型進(jìn)行數(shù)值模擬。通過仿真數(shù)據(jù)分析截?cái)嘟Y(jié)構(gòu)對(duì)放大器穩(wěn)定工作的影響。抑制返波振蕩,優(yōu)化結(jié)構(gòu)參數(shù)與電參數(shù),得到帶寬為3.5GHz,峰值功率為820W的放大信號(hào)的輸出。3、設(shè)計(jì)210GHz左右的回旋行波放大器,建立三維模型對(duì)其進(jìn)行初步的探索。仿真得到峰值為320W的功率輸出,并有1.0GHz的帶寬。
[Abstract]:The wavelength of millimeter wave band is between 1mm~10mm and the operating frequency is between 30GHz~300GHz. Because its frequency is between microwave and infrared, its biggest characteristic is wavelength short and frequency bandwidth. Cyclotron traveling wave amplifier is a kind of high power microwave device based on electron cyclotron maser effect. Due to its high power and wide band output characteristics, the research on this device has become more and more popular in recent years. With the increase of the operating frequency of the device, the development speed of the device is seriously restricted by the problem of the dimension pass effect and the power capacity. The conventional way to solve this problem is to adopt the higher order mode as the working mode in the cavity, but this brings about the problem of pattern competition. In the millimeter wave band, because the device's structure is smaller, the mode competition becomes more intense. Therefore, it is very important to study a kind of interaction cavity with mode selectivity in millimeter wave band. The quasi-optical cavity is a completely open side wall structure. The opening of the side wall makes some patterns diffracted from the side wall, which makes it mode selective and can solve the influence of mode competition. In this paper, a cyclotron traveling wave amplifier with quasi-optical cavity as the interaction cavity is studied. The emphasis is on the suppression of competition mode by quasi-optical cavity. The main work is as follows: 1. The reasons that restrict the development of gyrotron traveling wave amplifier are studied. The optical cavity structure is analyzed and studied theoretically. The Gao Si beam in the cavity is studied in depth, and the distribution expression of the electromagnetic field in the cavity is obtained by deducing the equation. The diffraction loss of quasi-optical cavity to electromagnetic field is analyzed. By comparing the density of dispersion curve in circular waveguide and quasi-optical cavity, it is determined that the structure can select the mode. In order to restrain the influence of competition mode, the theory of gyrotron dynamics is analyzed, and the dispersion curve equation is derived. The suppression of back wave oscillation by truncated structure is studied. Using quasi-optical cavity as the interaction cavity, the amplifier with working frequency in 140GHz is designed, and a three-dimensional model is established for numerical simulation. The influence of truncation structure on the stability of amplifier is analyzed by simulation data. The output of amplifying signal with bandwidth of 3.5 GHz and peak power of 820W is obtained by suppressing backward wave oscillation and optimizing structural and electrical parameters. 3. A cyclotron traveling wave amplifier about 210GHz is designed, and a three dimensional model is established to explore it. The power output with a peak value of 320W and bandwidth of 1.0GHz is obtained by simulation.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722

【共引文獻(xiàn)】

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本文編號(hào)：2427059