【摘要】：隨著片上系統(tǒng)的發(fā)展,帶隙基準(zhǔn)源精度和功耗的要求也越來越高.目前的高階溫度補償方法在工藝兼容、設(shè)計復(fù)雜度和功耗上還存在一定的局限性.本文推導(dǎo)了一個新穎的電流模帶隙基準(zhǔn)電路在飽和區(qū)工作時的溫度特性,并結(jié)合雙帶隙結(jié)構(gòu)在輸出支路上采用電流比例相減的方式實現(xiàn)有效的曲率補償,從而實現(xiàn)了一個新穎的雙帶隙結(jié)構(gòu)CMOS帶隙基準(zhǔn)源.在GSMC 0.18μm工藝下,設(shè)計的CMOS帶隙基準(zhǔn)源版圖面積為0.066mm~2.蒙特卡羅后仿真的結(jié)果表明,在-40~125℃溫度范圍內(nèi)平均溫度系數(shù)為14.27ppm/℃;在27℃時基準(zhǔn)電壓平均值為1.201V,標(biāo)準(zhǔn)偏差變化僅為33.813mV(2.82%);在3.3V工作電壓下,靜態(tài)電流平均為9.865μA,電源抑制為-37.21dB.本文設(shè)計的帶隙基準(zhǔn)源具有高精度、低功耗、結(jié)構(gòu)簡單的特點,是片上系統(tǒng)的良好選擇.
[Abstract]:With the development of on-chip system, the precision and power consumption of bandgap reference are higher and higher. The current high-order temperature compensation methods have some limitations in process compatibility, design complexity and power consumption. In this paper, the temperature characteristics of a novel current-mode band-gap reference circuit operating in the saturation region are derived, and the effective curvature compensation is realized by using the current proportional subtraction method in the output branch combined with the dual-bandgap structure. A novel dual band gap CMOS bandgap reference source is realized. In the GSMC 0.18 渭 m process, the CMOS bandgap reference source layout area is 0.066 mm / 2. The results of Monte Carlo simulation show that the average temperature coefficient is 14.27ppm/ 鈩，

本文編號：2417472