642nm紅光激光器有源區(qū)量子阱混雜的研究
發(fā)布時間：2019-01-15 22:42
【摘要】：隨著激光顯示技術(shù)的快速發(fā)展,對高性能紅光激光光源的需求愈發(fā)迫切。采用張應(yīng)變的GaInP量子阱可以獲得更短波長的紅光,但其受到的光學(xué)災(zāi)變損傷效應(yīng)更為嚴(yán)重,因而光電特性和可靠性面臨著挑戰(zhàn)。采用非吸收窗口結(jié)構(gòu)可以有效抑制腔面光吸收造成的材料損傷,通過量子阱混雜技術(shù)制作非吸收窗口是一種工藝方便,可靠性較好的方法,具有很好的應(yīng)用潛力。本論文主要針對642 nm紅光激光器的有源區(qū)開展了量子阱混雜的實(shí)驗研究。實(shí)驗中642 nm紅光激光器外延結(jié)構(gòu)采用MOCVD技術(shù)生長而成,有源區(qū)采用9 nm厚的張應(yīng)變Ga0.65In0.35P雙量子阱。分別采用了離子注入法和雜質(zhì)擴(kuò)散法的兩種方法來誘導(dǎo)量子阱混雜。離子注入誘導(dǎo)混雜時,需要引入快速后退火工藝來加速混雜過程,雜質(zhì)擴(kuò)散法誘導(dǎo)混雜時,需要先在外延結(jié)構(gòu)上生長ZnO薄膜來提供雜質(zhì)源。離子注入誘導(dǎo)混雜時,采用低能生物改性離子注入設(shè)備在去掉了表面GaAs歐姆接觸層的642 nm紅光激光器外延結(jié)構(gòu)中注入N離子,注入能量為40 KeV,注入劑量為le17 ions/cm2;離子注入完成后對樣品進(jìn)行快速熱退火來加速誘導(dǎo)量子阱混雜,退火溫度為730°C,退火時間為60s-300s,間隔為60s。實(shí)驗發(fā)現(xiàn)所有樣品均發(fā)生了波長藍(lán)移,且藍(lán)移量隨退火時間增加的而增加,300 s時獲得了 24.7 nm的最大藍(lán)移量。同時還發(fā)現(xiàn)長時間的退火會對紅光激光器外延結(jié)構(gòu)的晶體品質(zhì)和表面形貌造成不利影響。雜質(zhì)擴(kuò)散法誘導(dǎo)混雜時,首先采用磁控濺射在GaAs襯底上生長ZnO薄膜,根據(jù)測試結(jié)果得到了最合適的濺射參數(shù)(濺射功率70 W、濺射壓強(qiáng)1.5 Pa、氬氧比20sccm: lOsccm、襯底溫度為室溫);再在去掉了表面GaAs歐姆接觸層的642 nm紅光激光器外延結(jié)構(gòu)上濺射ZnO薄膜;最后通過Ar氣保護(hù)、600°C下的高溫退火使Zn雜質(zhì)擴(kuò)散進(jìn)入642 nm紅光激光器有源區(qū)來誘導(dǎo)量子阱混雜,退火時間為1 min-240 min。實(shí)驗發(fā)現(xiàn)樣品表面粗糙度隨退火時間的增加而增大。
[Abstract]:With the rapid development of laser display technology, the demand of high performance red laser light source becomes more and more urgent. Red light with shorter wavelength can be obtained by GaInP quantum well with tensile strain, but its optical damage is more serious, so the photoelectric characteristics and reliability are challenged. The non-absorption window structure can effectively suppress the material damage caused by optical absorption on the cavity surface. It is a convenient and reliable method to fabricate the non-absorption window by quantum well hybrid technology, which has good application potential. In this thesis, the quantum well mixing experiments are carried out in the active region of 642 nm red laser. In the experiment, the epitaxial structure of 642 nm red laser is grown by MOCVD technique, and the active region is a 9 nm thick tensioned Ga0.65In0.35P double quantum well. Two methods of ion implantation and impurity diffusion were used to induce quantum well mixing. In the process of ion implantation induced confounding, the rapid post-annealing process is needed to accelerate the hybrid process. When the impurity diffusion method is used to induce the hybrid process, the ZnO thin films on the epitaxial structure should be grown to provide the impurity source. In the case of ion implantation induced confounding, N ions were implanted into 642 nm red laser epitaxial structure without surface GaAs ohmic contact layer by using a low energy biological modified ion implantation device. The implantation energy was 40 KeV, and the dose was le17 ions/cm2;. After ion implantation, the samples were annealed rapidly to accelerate the induction of quantum well mixing. The annealing temperature was 730 擄C, the annealing time was 60s-300s and the interval was 60s. It was found that the wavelength blue shift occurred in all the samples and the blue shift increased with the annealing time. The maximum blue shift of 24.7 nm was obtained at 300s. It is also found that annealing for a long time will adversely affect the crystal quality and surface morphology of the epitaxial structure of the red laser. In the process of impurity diffusion induced mixing, ZnO thin films were first grown on GaAs substrates by magnetron sputtering. The most suitable sputtering parameters (sputtering power 70 W, sputtering pressure 1.5 Pa, argon / oxygen ratio 20sccm: lOsccm,) were obtained according to the test results. The substrate temperature is room temperature. Then the ZnO thin films were deposited on the epitaxial structure of 642 nm red laser without surface GaAs ohmic contact layer. Finally, Zn impurities are diffused into the active region of 642 nm red laser by Ar gas protection and annealed at 600 擄C at high temperature to induce quantum well mixing. The annealing time is 1 min-240 min.. It is found that the surface roughness increases with the increase of annealing time.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN248
本文編號：2409182
[Abstract]:With the rapid development of laser display technology, the demand of high performance red laser light source becomes more and more urgent. Red light with shorter wavelength can be obtained by GaInP quantum well with tensile strain, but its optical damage is more serious, so the photoelectric characteristics and reliability are challenged. The non-absorption window structure can effectively suppress the material damage caused by optical absorption on the cavity surface. It is a convenient and reliable method to fabricate the non-absorption window by quantum well hybrid technology, which has good application potential. In this thesis, the quantum well mixing experiments are carried out in the active region of 642 nm red laser. In the experiment, the epitaxial structure of 642 nm red laser is grown by MOCVD technique, and the active region is a 9 nm thick tensioned Ga0.65In0.35P double quantum well. Two methods of ion implantation and impurity diffusion were used to induce quantum well mixing. In the process of ion implantation induced confounding, the rapid post-annealing process is needed to accelerate the hybrid process. When the impurity diffusion method is used to induce the hybrid process, the ZnO thin films on the epitaxial structure should be grown to provide the impurity source. In the case of ion implantation induced confounding, N ions were implanted into 642 nm red laser epitaxial structure without surface GaAs ohmic contact layer by using a low energy biological modified ion implantation device. The implantation energy was 40 KeV, and the dose was le17 ions/cm2;. After ion implantation, the samples were annealed rapidly to accelerate the induction of quantum well mixing. The annealing temperature was 730 擄C, the annealing time was 60s-300s and the interval was 60s. It was found that the wavelength blue shift occurred in all the samples and the blue shift increased with the annealing time. The maximum blue shift of 24.7 nm was obtained at 300s. It is also found that annealing for a long time will adversely affect the crystal quality and surface morphology of the epitaxial structure of the red laser. In the process of impurity diffusion induced mixing, ZnO thin films were first grown on GaAs substrates by magnetron sputtering. The most suitable sputtering parameters (sputtering power 70 W, sputtering pressure 1.5 Pa, argon / oxygen ratio 20sccm: lOsccm,) were obtained according to the test results. The substrate temperature is room temperature. Then the ZnO thin films were deposited on the epitaxial structure of 642 nm red laser without surface GaAs ohmic contact layer. Finally, Zn impurities are diffused into the active region of 642 nm red laser by Ar gas protection and annealed at 600 擄C at high temperature to induce quantum well mixing. The annealing time is 1 min-240 min.. It is found that the surface roughness increases with the increase of annealing time.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN248
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