基于HF溶液選擇性刻蝕的單晶硅亞表面非晶損傷層探測方法研究
發(fā)布時間：2019-01-07 17:58
【摘要】：半導(dǎo)體產(chǎn)品高集成度和高性能化的快速發(fā)展,對半導(dǎo)體材料硅的加工表面質(zhì)量提出了苛刻要求,任何超出許可范圍的損傷都會降低半導(dǎo)體器件的性能。前期研究表明,亞表面的非晶化是單晶硅材料在超精密加工過程中的前期損傷的主要表現(xiàn)形式,因此非晶層特性的量化檢測,對于評價單晶硅表面/亞表面損傷程度顯得至關(guān)重要。目前已有的檢測方法雖然可以較好地分析非晶層的力學(xué)、化學(xué)、結(jié)構(gòu)等特性,但是存在諸如樣品制作過程復(fù)雜、檢測時間漫長、檢測費(fèi)用昂貴等問題,因此亟待尋求一種精確、快速、經(jīng)濟(jì)的檢測方法。研究表明,單晶硅材料的劃痕損傷層能被HF溶液選擇性刻蝕。根據(jù)這一特性,本文提出了一種快速檢測單晶硅亞表面損傷層厚度的方法,并結(jié)合TEM檢測對此方法的有效性進(jìn)行了驗證。進(jìn)而采用此方法,對不同載荷和刻劃速度下單晶硅表面的劃痕損傷層厚度進(jìn)行了檢測,揭示了載荷和速度對單晶硅亞表面劃痕損傷的影響規(guī)律。本文的主要研究結(jié)果及創(chuàng)新點(diǎn)如下：(1)利用HF溶液對單晶Si(100)表面的非晶硅損傷層具有選擇性刻蝕這一特性,提出了一種準(zhǔn)確、快速地檢測單晶硅亞表面非晶損傷層厚度的方法。透射電鏡結(jié)果顯示,HF溶液能選擇性地刻蝕單晶硅劃痕區(qū)域的亞表面損傷層,證實(shí)了該方法檢測結(jié)果的有效性。該方法有望應(yīng)用于單晶硅晶圓平坦化過程的損傷檢測與控制。(2)提出了一種亞表面非晶損傷層的密度測量方法。亞表面損傷層的質(zhì)量可以通過對比腐蝕前后的質(zhì)量差進(jìn)行測定,而其體積可由軟件積分的方法進(jìn)行計算,從而亞表面非晶層的密度可直接由公式計算可得。(3)闡述了外加載荷和滑動速度對單晶硅亞表面劃痕損傷的影響。實(shí)驗結(jié)果表明,當(dāng)外加載荷為單晶硅臨界屈服載荷的1.1倍及以下時,單晶硅亞表面的劃痕損傷層厚度隨刻劃速度的增大而減小；當(dāng)外加載荷達(dá)到臨界屈服載荷的1.8倍及以上時,單晶硅亞表面的劃痕損傷對刻劃速度的變化不敏感。
[Abstract]:With the rapid development of high integration and high performance of semiconductor products, the surface quality of silicon semiconductor materials is demanding. Any damage beyond the permitted range will reduce the performance of semiconductor devices. Previous studies have shown that the subsurface non-crystallization is the main form of early damage of monocrystalline silicon materials during ultra-precision machining, so the quantitative detection of the properties of amorphous layers, It is very important to evaluate the damage degree of monocrystalline silicon surface / subsurface. Although the existing testing methods can well analyze the mechanical, chemical and structural properties of amorphous layers, there are some problems such as the complexity of sample making process, the long detection time and the high detection cost, etc. Therefore, it is urgent to seek an accurate method. Rapid and economical detection method. The results show that the scratch damage layer of monocrystalline silicon can be selectively etched by HF solution. According to this characteristic, a fast method for detecting the thickness of the damage layer on the subsurface of monocrystalline silicon is proposed, and the effectiveness of the method is verified by TEM. Furthermore, the thickness of scratch layer on the surface of monocrystalline silicon was measured under different loading and scratching velocities, and the effect of load and velocity on the scratch damage of single crystal silicon subsurface was revealed. The main research results and innovations in this paper are as follows: (1) the selective etching of amorphous silicon damage layer on single crystal Si (100) surface by HF solution is used, and an accurate method is proposed. A rapid method for measuring the thickness of amorphous damage layer on the subsurface of monocrystalline silicon. The results of transmission electron microscopy show that HF solution can selectively etch the subsurface damage layer in the scratch region of monocrystalline silicon, which proves the validity of the method. This method is expected to be applied to the damage detection and control of wafer flattening. (2) A method for measuring the density of subsurface amorphous damage layer is proposed. The quality of the subsurface damage layer can be measured by comparing the mass difference before and after corrosion, and its volume can be calculated by the software integral method. Thus the density of the amorphous layer on the subsurface can be calculated directly from the formula. (3) the effects of applied load and sliding velocity on the scratch damage of the subsurface of monocrystalline silicon are discussed. The experimental results show that when the applied load is 1.1 times of the critical yield load of monocrystalline silicon, the thickness of scratch damage layer on the subsurface of monocrystalline silicon decreases with the increase of the engraving speed. When the applied load reaches 1.8 times of the critical yield load, the scratch damage on the subsurface of the monocrystalline silicon is insensitive to the variation of the characterization speed.
【學(xué)位授予單位】：西南交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN304.12
本文編號：2403960
[Abstract]:With the rapid development of high integration and high performance of semiconductor products, the surface quality of silicon semiconductor materials is demanding. Any damage beyond the permitted range will reduce the performance of semiconductor devices. Previous studies have shown that the subsurface non-crystallization is the main form of early damage of monocrystalline silicon materials during ultra-precision machining, so the quantitative detection of the properties of amorphous layers, It is very important to evaluate the damage degree of monocrystalline silicon surface / subsurface. Although the existing testing methods can well analyze the mechanical, chemical and structural properties of amorphous layers, there are some problems such as the complexity of sample making process, the long detection time and the high detection cost, etc. Therefore, it is urgent to seek an accurate method. Rapid and economical detection method. The results show that the scratch damage layer of monocrystalline silicon can be selectively etched by HF solution. According to this characteristic, a fast method for detecting the thickness of the damage layer on the subsurface of monocrystalline silicon is proposed, and the effectiveness of the method is verified by TEM. Furthermore, the thickness of scratch layer on the surface of monocrystalline silicon was measured under different loading and scratching velocities, and the effect of load and velocity on the scratch damage of single crystal silicon subsurface was revealed. The main research results and innovations in this paper are as follows: (1) the selective etching of amorphous silicon damage layer on single crystal Si (100) surface by HF solution is used, and an accurate method is proposed. A rapid method for measuring the thickness of amorphous damage layer on the subsurface of monocrystalline silicon. The results of transmission electron microscopy show that HF solution can selectively etch the subsurface damage layer in the scratch region of monocrystalline silicon, which proves the validity of the method. This method is expected to be applied to the damage detection and control of wafer flattening. (2) A method for measuring the density of subsurface amorphous damage layer is proposed. The quality of the subsurface damage layer can be measured by comparing the mass difference before and after corrosion, and its volume can be calculated by the software integral method. Thus the density of the amorphous layer on the subsurface can be calculated directly from the formula. (3) the effects of applied load and sliding velocity on the scratch damage of the subsurface of monocrystalline silicon are discussed. The experimental results show that when the applied load is 1.1 times of the critical yield load of monocrystalline silicon, the thickness of scratch damage layer on the subsurface of monocrystalline silicon decreases with the increase of the engraving speed. When the applied load reaches 1.8 times of the critical yield load, the scratch damage on the subsurface of the monocrystalline silicon is insensitive to the variation of the characterization speed.
【學(xué)位授予單位】：西南交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN304.12
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 吳征鎧;;拉曼光譜的發(fā)現(xiàn)和最近的發(fā)展[J];光譜學(xué)與光譜分析;1983年02期
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