發(fā)布時(shí)間：2019-01-03 07:57

【摘要】：以硅晶為代表的半導(dǎo)體材料是電子器件和光伏器件的基礎(chǔ)材料,材料的雜質(zhì)缺陷特征影響器件性能,因此對(duì)表針材料的雜質(zhì)缺陷特征的半導(dǎo)體電學(xué)特征參數(shù),載流子輸運(yùn)參數(shù)的監(jiān)測(cè)是非常重要的。現(xiàn)今,光學(xué)無(wú)損檢測(cè)手段用于半導(dǎo)體材料的測(cè)量是半導(dǎo)體檢測(cè)領(lǐng)域的熱點(diǎn)和趨勢(shì)。光載流子輻射測(cè)量技術(shù)(Photocarrier Radiometry,PCR)是一種全光、無(wú)損、動(dòng)態(tài)調(diào)制的光學(xué)檢測(cè)手段,可以實(shí)現(xiàn)半導(dǎo)體載流子輸運(yùn)參數(shù)(載流子壽命、擴(kuò)散系數(shù)、表面復(fù)合速率等)的非接觸測(cè)量。實(shí)驗(yàn)結(jié)果表明,PCR信號(hào)同激勵(lì)光強(qiáng)之間存在非線性效應(yīng),傳統(tǒng)的PCR理論模型中并沒(méi)有考慮這個(gè)情況,因此本文主要對(duì)光載流子輻射測(cè)量技術(shù)的非線性特征對(duì)載流子輸運(yùn)參數(shù)測(cè)量的影響進(jìn)行初步分析。本文首先圍繞光載流子輻射信號(hào)非線性特征的相關(guān)物理機(jī)制進(jìn)行展開(kāi),從半導(dǎo)體載流子產(chǎn)生復(fù)合過(guò)程,輸運(yùn)方程出發(fā),理解載流子的運(yùn)動(dòng)行為,然后通過(guò)求解輸運(yùn)方程,闡述了載流子輻射信號(hào)相關(guān)表達(dá)式,最后根據(jù)普朗克輻射理論闡述了光載流子輻射信號(hào)與載流子濃度和半導(dǎo)體樣品摻雜濃度的關(guān)系,給出了PCR強(qiáng)度響應(yīng)非線性系數(shù)。根據(jù)光載流子輻射信號(hào)的理論關(guān)系式進(jìn)行了理論仿真。進(jìn)行了與光載流子輻射信號(hào)相關(guān)參數(shù)的具體仿真。仿真過(guò)程中圍繞載流子輸運(yùn)參數(shù)和PCR強(qiáng)度響應(yīng)非線性系數(shù)展開(kāi),給出了非線性模型和傳統(tǒng)線性模型的適用條件,并且分析了本文講述的PCR非線性模型下反演載流子參數(shù)的影響。搭建了利用透射光監(jiān)測(cè)激勵(lì)光強(qiáng)的光學(xué)實(shí)驗(yàn)平臺(tái),開(kāi)展了光載流子輻射測(cè)量頻率掃描和強(qiáng)度掃描實(shí)驗(yàn)。通過(guò)分析不同工藝不同電阻率樣品的PCR強(qiáng)度響應(yīng)非線性效應(yīng)和載流子參數(shù)的具體反演結(jié)果,在實(shí)驗(yàn)上驗(yàn)證了PCR非線性和傳統(tǒng)線性模型的適用情況。測(cè)量了不同電阻率樣品的PCR強(qiáng)度響應(yīng)和PCR頻率響應(yīng),選取合適的擬合模型,得到了載流子輸運(yùn)參數(shù),最后通過(guò)反演獲得摻雜濃度測(cè)量樣品的電阻率。
[Abstract]:The semiconductor material represented by silicon crystal is the basic material of electronic device and photovoltaic device. The impurity defect characteristic of the material affects the device performance, so the semiconductor electrical characteristic parameter of the impurity defect characteristic of the surface needle material is discussed. The monitoring of carrier transport parameters is very important. Nowadays, optical nondestructive testing (NDT) is a hot spot and trend in semiconductor measurement. Optical Carrier radiation Measurement (Photocarrier Radiometry,PCR) is an all-optical, non-destructive, dynamic modulation optical measurement method, which can realize the carrier transport parameters (carrier lifetime, diffusion coefficient) of semiconductors. Surface recombination rate, etc.) non-contact measurement. The experimental results show that there is a nonlinear effect between the PCR signal and the excitation intensity, which is not considered in the traditional PCR theory model. Therefore, the influence of nonlinear characteristics of optical carrier radiation measurement technology on carrier transport parameters measurement is primarily analyzed in this paper. In this paper, the related physical mechanism of nonlinear characteristics of optical carrier radiation signals is first discussed. From the semiconductor carrier generation recombination process, the transport equation, the motion behavior of carrier is understood, and then the transport equation is solved. The correlation expression of carrier radiation signal is expounded. Finally, according to Planck radiation theory, the relationship between optical carrier radiation signal and carrier concentration and doping concentration of semiconductor sample is discussed, and the nonlinear coefficient of PCR intensity response is given. The theoretical simulation is carried out according to the theoretical relation of the optical carrier radiation signal. The simulation of the parameters related to the optical carrier radiation signal is carried out. In the simulation process, the nonlinear parameters of carrier transport and the nonlinear coefficient of PCR intensity response are expanded. The applicable conditions of nonlinear model and traditional linear model are given, and the effect of inversion carrier parameters under PCR nonlinear model described in this paper is analyzed. An optical experimental platform is set up to monitor the intensity of excited light by transmission light, and the experiments of frequency scanning and intensity scanning of optical carrier radiation measurement are carried out. By analyzing the nonlinear effect of PCR intensity response and the specific inversion results of carrier parameters of different resistivity samples with different processes, the applicability of PCR nonlinear and traditional linear models is verified experimentally. The PCR intensity response and PCR frequency response of different resistivity samples were measured. The carrier transport parameters were obtained by selecting a suitable fitting model. Finally, the resistivity of the samples was measured by inversion.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN304.07

【參考文獻(xiàn)】

相關(guān)期刊論文 前5條

1 劉俊巖;宋鵬;王飛;王揚(yáng);;Photocarrier radiometry for noncontact evaluation of space monocrystalline silicon solar cell under low-energy electron irradiation[J];Chinese Physics B;2015年09期

2 HUANG QiuPing;LI BinCheng;REN ShengDong;;Optical and photo-carrier characterization of ultra-shallow junctions in silicon[J];Science China(Physics,Mechanics & Astronomy);2013年07期

3 劉新福,孫以材,劉東升;四探針技術(shù)測(cè)量薄層電阻的原理及應(yīng)用[J];半導(dǎo)體技術(shù);2004年07期

4 黃暉,李亞文,馬慶華,陳建才,姬榮斌;碲鎘汞材料少子壽命的微波反射光電導(dǎo)衰減測(cè)量[J];紅外技術(shù);2003年06期

5 陳鳳翔,崔容強(qiáng),孟凡英,林書(shū)銓,唐敦乙,羅售余;用開(kāi)路電壓法測(cè)硅太陽(yáng)電池中少數(shù)載流子壽命[J];太陽(yáng)能學(xué)報(bào);2003年03期

相關(guān)博士學(xué)位論文 前1條

1 王謙;半導(dǎo)體材料特性的光載流子輻射檢測(cè)技術(shù)研究[D];中國(guó)科學(xué)院研究生院(光電技術(shù)研究所);2016年

，

本文編號(hào)：2399084