納米尺度下LER對(duì)線寬測(cè)量結(jié)果影響的研究
發(fā)布時(shí)間：2018-12-30 11:20
【摘要】：集成電路的刻線線寬測(cè)量是目前微納計(jì)量領(lǐng)域的熱點(diǎn)。主要研究的是對(duì)納米尺度的刻線尺寸以及它的表面因素參數(shù)進(jìn)行表征的技術(shù),表征尺寸一般在幾十到數(shù)百納米。目前迅猛發(fā)展的半導(dǎo)體行業(yè)對(duì)集成電路的集成度越來越高的要求推動(dòng)著這項(xiàng)技術(shù)的不斷發(fā)展。但是,光刻技術(shù)的不斷進(jìn)步帶來的集成電路的刻線尺寸減小到納米級(jí)別的同時(shí),線邊緣粗糙度(Line Edge Roughness,LER)卻并不隨著刻線尺寸而減小,這主要是由于制造工藝本身導(dǎo)致的。LER在線寬加工誤差中所占比重不斷增加,因此研究LER對(duì)線寬測(cè)量的影響極為重要。原子力顯微鏡(Atomic Force Microscopy,AFM)由于其高分辨率和對(duì)測(cè)量樣本材料的高度適應(yīng)性而成為現(xiàn)在線寬測(cè)量領(lǐng)域的一個(gè)重要工具。本文針對(duì)目前LER對(duì)線寬測(cè)量的影響越來越大的情況,通過對(duì)于納米線寬邊緣粗糙度的測(cè)量和表征來研究線寬邊緣粗糙度對(duì)線寬測(cè)量結(jié)果的影響。本文簡(jiǎn)要介紹了AFM的工作原理、儀器結(jié)構(gòu)和工作模式,分析了它在線寬測(cè)量中的應(yīng)用以及對(duì)測(cè)量圖像影響較大的一些因素并提出了相應(yīng)的校正方法。探討了目前納米線寬測(cè)量領(lǐng)域中針對(duì)這些問題所出現(xiàn)的研究趨勢(shì),為納米線寬測(cè)量的更深入的研究工作打好基礎(chǔ)。本文采用了一個(gè)改進(jìn)的線邊緣形貌測(cè)量方法,通過對(duì)納米線寬的底部、中部和頂部三條線寬以及對(duì)應(yīng)的六個(gè)關(guān)鍵點(diǎn)的測(cè)量。對(duì)線邊緣粗糙度進(jìn)行了準(zhǔn)確表征。并利用Matlab對(duì)AFM掃描圖像中提取出的6條關(guān)鍵點(diǎn)組成的線邊緣進(jìn)行了統(tǒng)計(jì)和核算,詳細(xì)分析了線邊緣粗糙度對(duì)于線寬測(cè)量的影響,研究了不同測(cè)量方法的線寬測(cè)量值不同的原因,并且建立了線邊緣形貌影響線寬測(cè)量值的理論模型,研究了線邊緣對(duì)局部線寬和平均線寬的不同影響。闡述了樣本位置誤差的計(jì)算和修正方法。用AFM測(cè)量了刻線樣本的不同區(qū)域。依據(jù)測(cè)量不確定度估計(jì)的相關(guān)理論,提出了評(píng)定包括來源于圖像傾斜校正等多種誤差的不確定度方法,建立了使用Innova型AFM測(cè)量線寬的不確定度估計(jì)體系,并進(jìn)行了相關(guān)評(píng)定。合成了刻線頂部、中部、底部線寬的標(biāo)準(zhǔn)不確定度并且計(jì)算了擴(kuò)展不確定度。
[Abstract]:Line width measurement of integrated circuits is a hot spot in the field of micro and nano measurement. The main research is on the characterization of nanoscale line size and its surface factor parameters, which are generally in the range of tens to hundreds of nanometers. With the rapid development of semiconductor industry, the integration of integrated circuits is becoming more and more important. However, with the development of lithography technology, the wire size of integrated circuit is reduced to the nanometer level, while the edge roughness (Line Edge Roughness,LER) does not decrease with the line size. This is mainly due to the manufacturing process itself. The proportion of LER on line width processing error is increasing, so it is very important to study the influence of LER on line width measurement. Atomic force microscope (Atomic Force Microscopy,AFM) has become an important tool in the field of linewidth measurement because of its high resolution and high adaptability to measuring sample materials. In view of the increasing influence of LER on linewidth measurement, the influence of linewidth edge roughness on linewidth measurement results is studied by measuring and characterizing the edge roughness of nanowire width. This paper briefly introduces the working principle, instrument structure and working mode of AFM, analyzes its application in line width measurement and some factors that have great influence on the measurement image, and puts forward the corresponding correction methods. The research trend of these problems in the field of nanowire width measurement is discussed in order to lay a good foundation for further research on nanowire width measurement. In this paper, an improved method is used to measure the shape of the nanowires, including the bottom, the middle and the top of the nanowires, and the corresponding six key points. The line edge roughness is accurately characterized. The line edge of six key points extracted from AFM scanning image is counted and calculated by Matlab. The influence of line edge roughness on line width measurement is analyzed in detail, and the reason why the line width measurement value of different measurement method is different is studied. A theoretical model of line edge topography influencing line width measurement is established, and the different effects of line edge on local line width and average line width are studied. The calculation and correction method of sample position error are described. AFM was used to measure the different regions of the engraved samples. Based on the theory of measurement uncertainty estimation, this paper presents a method to evaluate the uncertainty of various errors, including image tilt correction, and establishes a system of uncertainty estimation using Innova type AFM to measure line width, and makes a correlation evaluation. The standard uncertainty of line width at top, middle and bottom is synthesized and the extended uncertainty is calculated.
【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN407
，
本文編號(hào)：2395513
[Abstract]:Line width measurement of integrated circuits is a hot spot in the field of micro and nano measurement. The main research is on the characterization of nanoscale line size and its surface factor parameters, which are generally in the range of tens to hundreds of nanometers. With the rapid development of semiconductor industry, the integration of integrated circuits is becoming more and more important. However, with the development of lithography technology, the wire size of integrated circuit is reduced to the nanometer level, while the edge roughness (Line Edge Roughness,LER) does not decrease with the line size. This is mainly due to the manufacturing process itself. The proportion of LER on line width processing error is increasing, so it is very important to study the influence of LER on line width measurement. Atomic force microscope (Atomic Force Microscopy,AFM) has become an important tool in the field of linewidth measurement because of its high resolution and high adaptability to measuring sample materials. In view of the increasing influence of LER on linewidth measurement, the influence of linewidth edge roughness on linewidth measurement results is studied by measuring and characterizing the edge roughness of nanowire width. This paper briefly introduces the working principle, instrument structure and working mode of AFM, analyzes its application in line width measurement and some factors that have great influence on the measurement image, and puts forward the corresponding correction methods. The research trend of these problems in the field of nanowire width measurement is discussed in order to lay a good foundation for further research on nanowire width measurement. In this paper, an improved method is used to measure the shape of the nanowires, including the bottom, the middle and the top of the nanowires, and the corresponding six key points. The line edge roughness is accurately characterized. The line edge of six key points extracted from AFM scanning image is counted and calculated by Matlab. The influence of line edge roughness on line width measurement is analyzed in detail, and the reason why the line width measurement value of different measurement method is different is studied. A theoretical model of line edge topography influencing line width measurement is established, and the different effects of line edge on local line width and average line width are studied. The calculation and correction method of sample position error are described. AFM was used to measure the different regions of the engraved samples. Based on the theory of measurement uncertainty estimation, this paper presents a method to evaluate the uncertainty of various errors, including image tilt correction, and establishes a system of uncertainty estimation using Innova type AFM to measure line width, and makes a correlation evaluation. The standard uncertainty of line width at top, middle and bottom is synthesized and the extended uncertainty is calculated.
【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN407
，
本文編號(hào)：2395513
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