發(fā)布時(shí)間：2018-12-18 05:39

【摘要】：傳統(tǒng)的隧穿晶體管由于自身結(jié)構(gòu)的不對(duì)稱性使其只有單向電流通路,造成了電路設(shè)計(jì)的諸多不便.以改善這一缺陷為目的,設(shè)計(jì)了一種新型的具有雙向電流通路的高性能凹柵隧穿晶體管,并通過(guò)silvaco TCAD軟件仿真的方法,對(duì)該新型晶體管的性能進(jìn)行了驗(yàn)證.分析了器件的摻雜、尺寸等工藝參數(shù)對(duì)其能帶及性能的影響機(jī)制.結(jié)果表明,該器件在0.5V驅(qū)動(dòng)電壓下獲得了5×106的開(kāi)關(guān)比,最小亞閾值擺幅僅為12mV/dec.總的來(lái)說(shuō),該器件在低驅(qū)動(dòng)電壓下具有較大的開(kāi)關(guān)比以及非常陡峭的亞閾值曲線斜率,適用于超低功耗設(shè)計(jì)應(yīng)用.
[Abstract]:Because of the asymmetry of its own structure, the traditional tunneling transistor has only one way current path, which causes many inconvenience in circuit design. In order to improve this defect, a novel high performance concave gate tunneling transistor with bidirectional current path is designed, and the performance of the new transistor is verified by silvaco TCAD software simulation. The influence mechanism of doping and dimension on the energy band and performance of the device is analyzed. The results show that the switching ratio of the device is 5 脳 10 ~ 6 at 0.5 V driving voltage, and the minimum sub-threshold swing is only 12 MV / r. In general, the device has a large switching ratio and a very steep slope of sub-threshold curve at low drive voltage, which is suitable for ultra-low power design applications.
【作者單位】： 西安電子科技大學(xué)寬禁帶半導(dǎo)體材料與器件教育部重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家自然科學(xué)基金資助項(xiàng)目(61376099,61434007,61504100)
【分類號(hào)】：TN386
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本文編號(hào)：2385434