【摘要】：為研究紅熒烯(5,6,11,12-Tetraphenylnaphthacene,Rubrene)摻雜體系中激子的反應(yīng)過(guò)程,向主體材料Rubrene中摻入了1%的客體材料DBP(Tetraphenyldibenzoperiflanthene),制備了摻雜型Rubrene的有機(jī)發(fā)光器件.實(shí)驗(yàn)發(fā)現(xiàn),其電致發(fā)光磁效應(yīng)(Magneto-Electroluminescence,MEL)在室溫下呈現(xiàn)出復(fù)雜的新特征線型:在外加磁場(chǎng)處于0 27mT范圍內(nèi)MEL隨磁場(chǎng)的增加先小幅度上升,在27 200mT隨磁場(chǎng)的增加迅速下降,最后200 500mT范圍內(nèi)再次上升.通過(guò)分析可知器件內(nèi)存在3種激子反應(yīng)過(guò)程:單重態(tài)-三重態(tài)激子淬滅(Singlet-Triplet Annihilation,STA)、三重態(tài)激子湮滅(Triplet-Triplet Annihilation,TTA)和單重態(tài)激子分裂(Singlet Fission,STT).可通過(guò)改變注入電流的大小調(diào)節(jié)三者的競(jìng)爭(zhēng):大注入電流時(shí),器件主要是STA反應(yīng)和TTA反應(yīng);注入電流逐漸減小的過(guò)程中,激子反應(yīng)從以TTA為主逐漸過(guò)渡到以STT為主.同時(shí)也可通過(guò)改變摻雜層的厚度和摻雜層在器件結(jié)構(gòu)中的位置,對(duì)這幾種反應(yīng)之間的競(jìng)爭(zhēng)過(guò)程產(chǎn)生重要影響:摻雜層厚度越薄,STT越強(qiáng),而STA和TTA越弱;摻雜位置越靠近陰極,STA和TTA越強(qiáng),而STT越弱.這些實(shí)驗(yàn)發(fā)現(xiàn)不僅可加深對(duì)有機(jī)發(fā)光二級(jí)管中激子間相互作用的理解,也為進(jìn)一步優(yōu)化器件發(fā)光性能提供參考.
[Abstract]:In order to study the reaction process of excitons in the red fluorene doped system, 1% of the guest material DBP (Tetraphenyldibenzoperiflanthene), was doped into the host material Rubrene to prepare the doped Rubrene organic luminescent devices. It is found that the electroluminescent magnetic effect (Magneto-Electroluminescence,MEL) exhibits a new complex linear pattern at room temperature. The MEL increases slightly with the increase of the magnetic field in the range of 0 27mT and decreases rapidly with the increase of the magnetic field at 27 鈩，

本文編號(hào)：2381943