【摘要】：功率放大器在通信、雷達(dá)、導(dǎo)航等系統(tǒng)中扮演了極為重要的角色,是現(xiàn)代無線通信系統(tǒng)的核心部件,其性能的好壞將影響整個(gè)系統(tǒng)性能。因此,更高輸出功率、更高效率、更高增益、更寬帶寬的功率放大器一直是備受期待的。LDMOS晶體管的出現(xiàn),在一定程度上迎合了這種需求�；贚DMOS管的功率放大器以其良好的線性度、效率以及成本較低等特點(diǎn)而被廣泛應(yīng)用,特別是在無線通信系統(tǒng)中。由于單管輸出功率相對(duì)較低,通�？刹捎霉β屎铣杉夹g(shù)。本文首先介紹了功率放大器的基礎(chǔ)理論以及各項(xiàng)主要設(shè)計(jì)指標(biāo),梳理了功率放大器設(shè)計(jì)的主要內(nèi)容,并簡(jiǎn)單介紹了功率合成技術(shù)。其次,針對(duì)LDMOS管主要運(yùn)用在RF頻段這一特點(diǎn),而寬帶功率合成技術(shù)不可避免地要設(shè)計(jì)寬帶功率分配/合成網(wǎng)絡(luò),本文采用平面人工傳輸線技術(shù)解決小型化寬帶功分網(wǎng)絡(luò)這一問題。本文在對(duì)平面人工傳輸線進(jìn)行細(xì)致的分析后,通過用兩級(jí)人工傳輸線等效的四分之一波長阻抗變換結(jié)構(gòu),設(shè)計(jì)了小型化寬帶功分網(wǎng)絡(luò)。HFSS仿真結(jié)果顯示功分器在0.5GHz~1.4GHz范圍內(nèi)性能良好。最后,本文設(shè)計(jì)了基于LDMOS管的寬帶功率放大器。設(shè)計(jì)了具有三級(jí)四分之一波長切比雪夫阻抗變換結(jié)構(gòu)的寬帶功率合成網(wǎng)絡(luò),仿真結(jié)果良好。利用仿真軟件對(duì)晶體管進(jìn)行負(fù)載牽引和源牽引,得到輸入阻抗和輸出阻抗,并在此基礎(chǔ)上采用共軛匹配方法設(shè)計(jì)出匹配電路網(wǎng)絡(luò)。將寬帶功分合成網(wǎng)絡(luò)的HFSS仿真數(shù)據(jù)導(dǎo)入ADS軟件,搭建好功率放大器整體電路并進(jìn)行仿真,優(yōu)化設(shè)計(jì)了工作在0.5GHz~1.4GHz內(nèi),小信號(hào)增益大于15.5dB的功率放大器。最后根據(jù)仿真版圖繪制了實(shí)際加工版圖及裝配圖,制作了功放實(shí)物,完成了調(diào)試和測(cè)試。脈沖測(cè)試結(jié)果顯示在0.5GHz~1.4GHz內(nèi),功放最大增益為19.5dB,最大輸出功率為42.7dBm,最大漏極效率為52.2%。本文對(duì)設(shè)計(jì)寬帶脈沖功率放大器具有一定的指導(dǎo)意義。
[Abstract]:Power amplifier plays an important role in communication, radar, navigation and other systems. It is the core component of modern wireless communication system, and its performance will affect the performance of the whole system. Therefore, power amplifiers with higher output power, higher efficiency, higher gain and wider bandwidth have always been highly anticipated. The appearance of LDMOS transistors caters to this demand to some extent. Power amplifiers based on LDMOS transistors are widely used in wireless communication systems due to their good linearity, efficiency and low cost. Because the output power of single tube is relatively low, power combination technology is usually used. In this paper, the basic theory of power amplifier and its main design indexes are introduced, the main contents of power amplifier design are summarized, and the technology of power synthesis is briefly introduced. Secondly, aiming at the characteristic that LDMOS tube is mainly used in the RF band, the broadband power combination technology inevitably has to design the broadband power distribution / synthesis network. In this paper, planar artificial transmission line technology is used to solve the problem of miniaturized broadband power distribution network. After detailed analysis of planar artificial transmission line, the equivalent 1/4 wavelength impedance conversion structure of two-stage artificial transmission line is used in this paper. A miniaturized wideband power division network is designed, and the HFSS simulation results show that the power divider performs well in the range of 0.5GHz~1.4GHz. Finally, a broadband power amplifier based on LDMOS transistor is designed. A wideband power synthesis network with a three-stage 1/4 wavelength Chebyshev impedance transform structure is designed and the simulation results are satisfactory. The input impedance and output impedance are obtained by using the simulation software to pull the transistor load and source, and the matching circuit network is designed by conjugate matching method. The HFSS simulation data of wideband power division synthesis network is imported into ADS software. The whole circuit of power amplifier is built and simulated. The power amplifier with small signal gain larger than 15.5dB is optimized and designed in 0.5GHz~1.4GHz. Finally, according to the simulation layout, the actual processing layout and assembly diagram are drawn, the power amplifier is made, and the debugging and testing are completed. The pulse test results show that the maximum gain of power amplifier is 19.5 dB, the maximum output power is 42.7 dBm, and the maximum drain efficiency is 52.2 dB in 0.5GHz~1.4GHz. This paper has a certain guiding significance for the design of broadband pulse power amplifier.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75

【參考文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前1條

1 孫勝雷;C波段脈沖功率放大器的研制[D];電子科技大學(xué);2006年

，

本文編號(hào)：2380189