4 inch低位錯(cuò)密度InP單晶的VGF生長(zhǎng)及性質(zhì)研究
發(fā)布時(shí)間：2018-12-13 17:38
【摘要】：采用高壓垂直溫度梯度凝固法(VGF)生長(zhǎng)了非摻、摻硫和摻鐵的4 inch直徑(100)InP單晶,獲得的單晶的平均位錯(cuò)密度均小于5000 cm~(-2)。對(duì)4 inch InP晶片上進(jìn)行多點(diǎn)X-射線雙晶衍射測(cè)試,其(004)X-射線雙晶衍射峰的半峰寬約為30弧秒且分布均勻。與液封直拉法(LEC)相比,VGF-InP單晶生長(zhǎng)過程的溫度梯度很低,導(dǎo)致其孿晶出現(xiàn)的幾率顯著增加。然而大量晶體生長(zhǎng)結(jié)果表明VGF-InP晶錠上出現(xiàn)孿晶后,通常晶體的生長(zhǎng)方向仍為(100)方向,這確保從生長(zhǎng)的4 inch VGF-InP(100)晶錠上仍能獲得相當(dāng)數(shù)量的2~4 inch(100)晶片。由于鐵在InP中的分凝系數(shù)很小,摻Fe-InP單晶VGF生長(zhǎng)過程中容易出現(xiàn)組份過冷,導(dǎo)致多晶生長(zhǎng)。通過控制生長(zhǎng)溫度梯度及摻鐵量,可獲得較高的摻鐵InP單晶成晶率。對(duì)VGF-InP單晶的電學(xué)性質(zhì)、位錯(cuò)密度及位錯(cuò)的分布特點(diǎn)、晶體完整性等進(jìn)行了研究。
[Abstract]:The 4 inch diameter (100) InP single crystals without doping, sulfur and iron were grown by high pressure vertical temperature gradient solidification method (VGF). The average dislocation density was less than 5000 cm~ (-2). The multipoint X ray double crystal diffraction measurements on 4 inch InP wafer show that the half width of (004) X ray double crystal diffraction peak is about 30 arc seconds and the distribution is uniform. Compared with the liquid-sealed Czochralski (LEC) method, the temperature gradient in the growth process of VGF-InP single crystal is very low, which leads to a significant increase in the probability of twin appearance. However, a large number of crystal growth results show that after twins appear on VGF-InP ingot, the growth direction of the crystal is still (100) direction, which ensures that a considerable number of 2 inch (100) wafers can still be obtained from the grown 4 inch VGF-InP (100) ingot. Due to the small segregation coefficient of iron in InP, the component undercooling is easy to occur during the growth of Fe-InP doped single crystal VGF, which leads to polycrystalline growth. By controlling the growth temperature gradient and the amount of iron doped, a higher crystallinity of Fe-doped InP single crystal can be obtained. The electrical properties, dislocation density, dislocation distribution and crystal integrity of VGF-InP single crystals were investigated.
【作者單位】： 中國(guó)科學(xué)院半導(dǎo)體研究所中國(guó)科學(xué)院半導(dǎo)體材料科學(xué)重點(diǎn)實(shí)驗(yàn)室低維半導(dǎo)體材料與器件北京市重點(diǎn)實(shí)驗(yàn)室;中國(guó)科學(xué)院大學(xué)材料科學(xué)與光電技術(shù)學(xué)院;
【分類號(hào)】：TN304
，
本文編號(hào)：2376948
[Abstract]:The 4 inch diameter (100) InP single crystals without doping, sulfur and iron were grown by high pressure vertical temperature gradient solidification method (VGF). The average dislocation density was less than 5000 cm~ (-2). The multipoint X ray double crystal diffraction measurements on 4 inch InP wafer show that the half width of (004) X ray double crystal diffraction peak is about 30 arc seconds and the distribution is uniform. Compared with the liquid-sealed Czochralski (LEC) method, the temperature gradient in the growth process of VGF-InP single crystal is very low, which leads to a significant increase in the probability of twin appearance. However, a large number of crystal growth results show that after twins appear on VGF-InP ingot, the growth direction of the crystal is still (100) direction, which ensures that a considerable number of 2 inch (100) wafers can still be obtained from the grown 4 inch VGF-InP (100) ingot. Due to the small segregation coefficient of iron in InP, the component undercooling is easy to occur during the growth of Fe-InP doped single crystal VGF, which leads to polycrystalline growth. By controlling the growth temperature gradient and the amount of iron doped, a higher crystallinity of Fe-doped InP single crystal can be obtained. The electrical properties, dislocation density, dislocation distribution and crystal integrity of VGF-InP single crystals were investigated.
【作者單位】： 中國(guó)科學(xué)院半導(dǎo)體研究所中國(guó)科學(xué)院半導(dǎo)體材料科學(xué)重點(diǎn)實(shí)驗(yàn)室低維半導(dǎo)體材料與器件北京市重點(diǎn)實(shí)驗(yàn)室;中國(guó)科學(xué)院大學(xué)材料科學(xué)與光電技術(shù)學(xué)院;
【分類號(hào)】：TN304
，
本文編號(hào)：2376948
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