碳化硅MOSFET器件動態(tài)參數(shù)測量及其影響因素的研究
發(fā)布時(shí)間：2018-12-11 04:05
【摘要】：碳化硅以其出色的材料特性受到人們的廣泛關(guān)注,隨著研究的不斷深入,基于碳化硅材料的新型半導(dǎo)體器件也相繼問世,其中碳化硅功率MOSFET具有更低的導(dǎo)通電阻,更高的極限工作溫度,更快的開關(guān)頻率,因此具有更好的發(fā)展前景。作為開關(guān)器件,在實(shí)際應(yīng)用中碳化硅功率MOSFET器件需要頻繁的進(jìn)行開通和關(guān)斷,而目前對于碳化硅功率MOSFET器件的開關(guān)方式仍以硬開關(guān)為主,因此器件的開關(guān)損耗問題就很突出；另一方面,在開關(guān)過程中,電壓電流變化幅度巨大,在電路寄生參數(shù)的影響下會出現(xiàn)電壓電流過沖,造成器件擊穿,給系統(tǒng)運(yùn)行帶來嚴(yán)重的后果。本文結(jié)合國家電網(wǎng)智能電網(wǎng)研究院的"1200V SiC MOSFET器件制備及應(yīng)用特性關(guān)鍵技術(shù)研究”項(xiàng)目,以碳化硅MOSFET的動態(tài)參數(shù)測試為出發(fā)點(diǎn),建立了LTspice仿真,用仿真分析方法探究了驅(qū)動電阻、柵極雜散電感、溫度和負(fù)載特性對碳化硅MOSFET器件動態(tài)參數(shù)的影響,重點(diǎn)分析了開通關(guān)斷時(shí)間和電壓過沖對上述影響因素的響應(yīng)情況。同時(shí),搭建了碳化硅MOSFET器件動態(tài)參數(shù)測試平臺,用實(shí)驗(yàn)的方法探究了阻性負(fù)載和感性負(fù)載對于碳化硅MOSFET動態(tài)參數(shù)的影響；另外,在特定條件下進(jìn)行測試實(shí)驗(yàn),與仿真結(jié)果形成對比,驗(yàn)證了仿真電路的準(zhǔn)確性。本文所做工作為碳化硅MOSFET器件的動態(tài)過程研究提供了可靠的仿真分析方法和實(shí)驗(yàn)測試平臺。
[Abstract]:Silicon carbide has attracted extensive attention for its outstanding material properties. With the development of research, new semiconductor devices based on silicon carbide have been developed, among which silicon carbide power MOSFET has lower on-resistance. Higher limit operating temperature, faster switching frequency, so has a better development prospects. As switch devices, silicon carbide power MOSFET devices need to be turned on and off frequently in practical applications, but the switch mode of silicon carbide power MOSFET devices is still hard switch, so the switch loss problem is very prominent. On the other hand, in the process of switching, the voltage and current change greatly, under the influence of the parasitic parameters of the circuit, voltage and current overshoot will occur, resulting in device breakdown, which will bring serious consequences to the operation of the system. In this paper, combining with the project of "Research on the key Technologies of 1200V SiC MOSFET device Fabrication and Application characteristics" of the State Power Grid Smart Grid Research Institute, and taking the dynamic parameter test of sic MOSFET as the starting point, the LTspice simulation is established. The effects of driving resistance, gate stray inductance, temperature and load characteristics on the dynamic parameters of silicon carbide MOSFET devices are investigated by means of simulation analysis. The response of turn-on time and voltage overshoot to the above factors are emphatically analyzed. At the same time, the dynamic parameters testing platform of silicon carbide MOSFET device is built, and the influence of resistive load and inductive load on the dynamic parameters of silicon carbide MOSFET is investigated by the method of experiment. In addition, the experimental results are compared with the simulation results, and the accuracy of the simulation circuit is verified. The work in this paper provides a reliable simulation analysis method and experimental test platform for the study of dynamic process of silicon carbide MOSFET devices.
【學(xué)位授予單位】：華北電力大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386
本文編號：2371830
[Abstract]:Silicon carbide has attracted extensive attention for its outstanding material properties. With the development of research, new semiconductor devices based on silicon carbide have been developed, among which silicon carbide power MOSFET has lower on-resistance. Higher limit operating temperature, faster switching frequency, so has a better development prospects. As switch devices, silicon carbide power MOSFET devices need to be turned on and off frequently in practical applications, but the switch mode of silicon carbide power MOSFET devices is still hard switch, so the switch loss problem is very prominent. On the other hand, in the process of switching, the voltage and current change greatly, under the influence of the parasitic parameters of the circuit, voltage and current overshoot will occur, resulting in device breakdown, which will bring serious consequences to the operation of the system. In this paper, combining with the project of "Research on the key Technologies of 1200V SiC MOSFET device Fabrication and Application characteristics" of the State Power Grid Smart Grid Research Institute, and taking the dynamic parameter test of sic MOSFET as the starting point, the LTspice simulation is established. The effects of driving resistance, gate stray inductance, temperature and load characteristics on the dynamic parameters of silicon carbide MOSFET devices are investigated by means of simulation analysis. The response of turn-on time and voltage overshoot to the above factors are emphatically analyzed. At the same time, the dynamic parameters testing platform of silicon carbide MOSFET device is built, and the influence of resistive load and inductive load on the dynamic parameters of silicon carbide MOSFET is investigated by the method of experiment. In addition, the experimental results are compared with the simulation results, and the accuracy of the simulation circuit is verified. The work in this paper provides a reliable simulation analysis method and experimental test platform for the study of dynamic process of silicon carbide MOSFET devices.
【學(xué)位授予單位】：華北電力大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 杜子椺;;淺析電力電子技術(shù)的發(fā)展與應(yīng)用[J];課程教育研究;2013年24期
，本文編號：2371830
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