【摘要】：集成電路等電子設(shè)備中的傳導(dǎo)模式的電磁干擾(EMI)已成為當(dāng)前國(guó)際上的熱點(diǎn)問(wèn)題之一,消除集成電路和晶體管等有源器件和系統(tǒng)中電磁干擾的最有效的辦法,是研制磁集成薄膜EMI濾波器。集成小型化的薄膜EMI濾波器的首要任務(wù)是把截止頻率fr提高到GHz頻段,并使磁性薄膜保持優(yōu)良的軟磁性能和高頻性能。由于材料是器件的基礎(chǔ),所以軟磁薄膜的高性能、寬頻段和低損耗是集成磁芯器件獲得高性能的關(guān)鍵。針對(duì)應(yīng)用于GHz范圍的集成抗EMI濾波器,磁性薄膜必須滿足高頻段的應(yīng)用需求,也就是說(shuō),其截止頻率fr必須達(dá)到GHz范圍,具有高的磁導(dǎo)率和低的損耗角正切tgδ。根據(jù)應(yīng)用需求的不同,磁性薄膜的電磁性能和高頻性能必須可調(diào)控�；趯�(duì)軟磁薄膜明確的性能要求,本論文以CoNbZr軟磁薄膜為磁芯研究對(duì)象,優(yōu)化設(shè)計(jì)了共面波導(dǎo)(CPW),集成制作了GHz濾波器,可應(yīng)用于電磁干擾的抑制。首先,采用射頻磁控濺射的方法在Si基片上沉積了CoNbZr軟磁薄膜,主要研究了濺射膜厚、濺射功率、濺射氣壓、濺射傾斜角度等工藝參數(shù),對(duì)薄膜高頻性能和磁性能的影響。研究發(fā)現(xiàn),濺射功率為250W,濺射氣壓0.4Pa,薄膜厚度140nm時(shí),薄膜性能最優(yōu)。其易軸矯頑力(Hce)為14Oe,面內(nèi)各向異性場(chǎng)(Hk)為98Oe,飽和磁化強(qiáng)度(4πMs)高達(dá)15.9KGs,自然共振頻率(fr)為3.5GHz,另外,傾斜角度的增大,可以夠提高薄膜的Hk和fr,但同時(shí)也會(huì)導(dǎo)致Hce的增加和磁導(dǎo)率的減小。同時(shí)分析了工藝參數(shù)對(duì)薄膜磁性能影響的微觀機(jī)理與物理機(jī)制。然后,采用高頻仿真軟件(HFSS)設(shè)計(jì)了共面波導(dǎo)(CPW)的尺寸,通過(guò)傳統(tǒng)電鍍工藝完成其制作。所得共面波導(dǎo),在300kHz~20GHz的測(cè)試范圍內(nèi),其傳輸損耗|S21|不超過(guò)0.4dB,滿足阻抗匹配條件。另外,仿真設(shè)計(jì)了CoNbZr薄膜與CPW集成的濾波器,通過(guò)在磁性薄膜平面內(nèi)施加一定角度的磁場(chǎng),在10GHz-40GHz范圍內(nèi)可形成多頻點(diǎn)窄帶帶阻濾波器。最后,采用微電子光刻技術(shù),制作了應(yīng)用于抗EMI的GHz磁芯集成濾波器。該濾波器是將CoNbZr薄膜集成在我們所設(shè)計(jì)的CPW上,通過(guò)磁性薄膜對(duì)噪聲信號(hào)進(jìn)行吸收衰減。在不加偏置角磁場(chǎng)時(shí),器件的吸收頻率為3.75GHz,衰減幅度-8.3dB。并且分析了器件的損耗機(jī)理,認(rèn)為磁性薄膜的鐵磁共振損耗是主要因素。
[Abstract]:Conductive mode electromagnetic interference (EMI) in electronic devices such as integrated circuits has become one of the hot issues in the world, and the most effective method to eliminate electromagnetic interference in active devices and systems such as integrated circuits and transistors. Magnetic integrated thin film EMI filter is developed. The primary task of the integrated miniaturized thin film EMI filter is to improve the cutoff frequency fr to the GHz band and to keep the magnetic thin film with excellent soft magnetic properties and high frequency performance. Because the material is the basis of the device, the high performance of the soft magnetic film, broadband band and low loss are the key to the high performance of the integrated magnetic core device. For integrated anti-EMI filters applied in GHz range, the magnetic films must meet the application requirements of high frequency band, that is, the cut-off frequency fr must reach the GHz range, with high permeability and low loss angle tangent tg 未. The electromagnetic and high frequency properties of magnetic thin films must be adjustable according to the application requirements. Based on the clear performance requirements of soft magnetic thin films, this paper takes CoNbZr soft magnetic thin films as the core research object, and optimizes the design of coplanar waveguide (CPW), integrated GHz filters, which can be applied to the suppression of electromagnetic interference. Firstly, CoNbZr soft magnetic thin films were deposited on Si substrates by RF magnetron sputtering. The effects of sputtering film thickness, sputtering power, sputtering pressure and sputtering tilt angle on the high frequency and magnetic properties of the films were studied. It is found that the film has the best performance when the sputtering power is 250 W, the sputtering pressure is 0.4 Pa, and the film thickness is 140nm. The easy axis coercivity (Hce) is 14Oe, the in-plane anisotropic field (Hk) is 98Oe, the saturation magnetization (4 蟺 Ms) is up to 15.9KGs, and the natural resonance frequency (fr) is 3.5GHz. In addition, the increase of tilt angle can increase the Hk and fr, of the films. But it also leads to the increase of Hce and the decrease of permeability. At the same time, the microcosmic and physical mechanism of the influence of process parameters on the magnetic properties of the films were analyzed. Then, the size of coplanar waveguide (CPW) is designed by high frequency simulation software (HFSS). In the range of 300kHz~20GHz, the transmission loss of the coplanar waveguide is less than 0.4 dB, and the impedance matching condition is satisfied. In addition, the filter integrated with CoNbZr film and CPW is designed by simulation. By applying a magnetic field at a certain angle in the plane of the magnetic film, a multi-frequency narrow-band stop-band filter can be formed in the range of 10GHz-40GHz. Finally, GHz core integrated filter for anti-EMI is fabricated by using microelectronic lithography technology. The filter integrates the CoNbZr film on the CPW designed by us and absorbs and attenuates the noise signal through the magnetic film. Without bias angle magnetic field, the absorption frequency of the device is 3.75 GHz and the attenuation amplitude is -8.3 dB. The loss mechanism of the device is analyzed and the ferromagnetic resonance loss of the magnetic film is considered as the main factor.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN713

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 王藝程;張懷武;魯廣鐸;白飛明;;納米高頻軟磁薄膜材料研究進(jìn)展[J];中國(guó)材料進(jìn)展;2012年07期

2 滑瑞霞;張磊;龍慧;;EMI電源濾波器的插入損耗分析[J];電子科技;2011年01期

3 鞏英明;;磁性薄膜高頻特性研究進(jìn)展[J];磁性材料及器件;2008年04期

4 蔣向東,張懷武,文歧業(yè),鐘智勇,楊爭(zhēng),唐曉莉;CoNbZr非晶軟磁薄膜晶化動(dòng)力學(xué)研究[J];功能材料;2005年02期

5 蔣向東,張懷武,文歧業(yè),石玉;非晶Co-Nb-Zr薄膜的納米晶化及磁性[J];真空科學(xué)與技術(shù)學(xué)報(bào);2005年01期

6 李寧,盧迪芬,陳森鳳;溶膠-凝膠法制備薄膜的研究進(jìn)展[J];玻璃與搪瓷;2004年06期

7 蘇樺,張懷武,唐曉莉;抗EMI磁性濾波器:原理應(yīng)用展望[J];磁性材料及器件;2004年05期

8 蘇樺,唐曉莉,張懷武;抗電磁干擾(EMI)磁性材料及元器件技術(shù)[J];世界科技研究與發(fā)展;2001年04期

9 毛興宇;低頻弱磁場(chǎng)下180°疇壁位移引起的磁損耗[J];集美大學(xué)學(xué)報(bào)(自然科學(xué)版);2001年02期

10 林曉芳;抗電磁干擾濾波器—成都宏明電子實(shí)業(yè)總公司推出系列產(chǎn)品[J];世界電子元器件;1999年11期

相關(guān)博士學(xué)位論文 前4條

1 王藝程;GHz波段軟磁薄膜的性能調(diào)控及器件集成技術(shù)[D];電子科技大學(xué);2016年

2 郝桂杰;射頻集成納米軟磁薄膜的性能和應(yīng)用研究[D];電子科技大學(xué);2015年

3 魯廣鐸;GHz軟磁顆粒膜的電磁性能和應(yīng)用基礎(chǔ)研究[D];電子科技大學(xué);2012年

4 蔣向東;納米晶薄膜芯材及其應(yīng)用基礎(chǔ)研究[D];電子科技大學(xué);2005年

相關(guān)碩士學(xué)位論文 前5條

1 趙祖靜;基于TaN薄膜的研究[D];電子科技大學(xué);2016年

2 王駱;超高頻集成磁膜螺線管電感的設(shè)計(jì)與制備[D];電子科技大學(xué);2016年

3 汪學(xué)鋒;高頻軟磁薄膜的制備及其電磁噪聲抑制性能應(yīng)用研究[D];電子科技大學(xué);2011年

4 林敏;軟磁薄膜面內(nèi)單軸各向異性的調(diào)控[D];蘭州大學(xué);2010年

5 金沈賢;緩沖層對(duì)鈷鐵氧體薄膜結(jié)構(gòu)和性能影響[D];電子科技大學(xué);2008年

，

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