【摘要】：短波紅外In Ga As探測器具有室溫工作、探測率高等優(yōu)點,在空間觀測、環(huán)境監(jiān)測以及軍事領(lǐng)域等具有廣泛的應(yīng)用前景。基于短波紅外In Ga As探測器的應(yīng)用要求,本論文主要圍繞延伸波長In Ga As探測器制備的臺面刻蝕工藝以及刻蝕損傷展開研究,以進一步提高延伸波長In Ga As焦平面探測器的性能。采用正交設(shè)計實驗的方法研究低物理刻蝕作用的Cl2/N2 ICP刻蝕工藝參數(shù),對刻蝕速率和表面形貌進行的分析,獲得的工藝條件為:溫度170℃,Cl2:N2=10:30 sccm、ICP功率500W、RF功率160W、6m T條件下,刻蝕表面平滑。利用初步優(yōu)化工藝參數(shù)和原工藝參數(shù)下進行器件驗證,分析了器件的I-V曲線以及暗電流密度和溫度的關(guān)系等,發(fā)現(xiàn)初步優(yōu)化參數(shù)下器件的暗電流沒有明顯改善,初步分析是由于刻蝕后選擇的參數(shù)過程中沒有考慮刻蝕損傷如直流偏壓等參數(shù),導致電學性能不夠理想,后續(xù)會進一步開展研究。正交試驗設(shè)計的方法研究了Cl2/CH4/H2刻蝕延伸波長In Ga As探測器工藝參數(shù),分別采用原子力顯微鏡(AFM)和掃描電子顯微鏡(SEM)測量了刻蝕樣品的表面粗糙度和臺階高度及形貌,獲得了表面的粗糙度和選擇性刻蝕比。在選定了工藝參數(shù)范圍后又進行了一組正方實驗,同樣分析了SEM和AFM圖像,初步獲得了優(yōu)化的工藝條件:60℃,ICP功率1800 W,RF功率75 W,氣壓4 m T,此條件下的DC偏壓為132 V,粗糙度比較小,且臺面的垂直度較好。引入導電AFM(C-AFM)表征新方法,分析了延伸波長探測器材料的表面缺陷,測試得到了微區(qū)的電流-電壓曲線,并研究材料表面微區(qū)漏電流與器件電學特性的關(guān)系,分析了暗電流密度的主要成分,驗證了C-AFM結(jié)果的可靠性,這為實驗分析獲得優(yōu)化工藝條件提供有效依據(jù),在提升器件性能方面起到一定的作用。
[Abstract]:Shortwave infrared In Ga As detectors have been widely used in space observation, environmental monitoring and military applications due to their advantages of working at room temperature and high detectability. Based on the application requirements of short wave infrared In Ga As detectors, this paper mainly focuses on the bench etching technology and etching damage of extended wavelength In Ga As detectors. In order to further improve the performance of extended wavelength In Ga As focal plane detector. The process parameters of Cl2/N2 ICP etching with low physical etching were studied by orthogonal design method. The etching rate and surface morphology were analyzed. The process conditions were obtained as follows: temperature 170 鈩，

本文編號：2358808