發(fā)布時(shí)間：2018-11-21 17:40

【摘要】：石墨烯場(chǎng)效應(yīng)晶體管的研究對(duì)于摩爾定律的延續(xù)具有非常重要的意義.近年來(lái),大面積、高質(zhì)量石墨烯薄膜制備技術(shù)的快速發(fā)展,進(jìn)一步推動(dòng)了基于石墨烯材料的新型電子器件的研究,引起了集成電路領(lǐng)域研究人員的廣泛關(guān)注.本文所制備的石墨烯場(chǎng)效應(yīng)晶體管以ITO為柵電極,Ta_2O_5為柵絕緣層,石墨烯為有源層,Ti/Au雙層金屬為源漏電極.電學(xué)特性測(cè)試與分析結(jié)果表明,石墨烯與源漏電極形成了良好的歐姆接觸.室溫下,石墨烯場(chǎng)效應(yīng)晶體管展示了其特有的雙極性特征,空穴遷移率約為2272 cm2/(V s),電流開(kāi)關(guān)比約為6.2.轉(zhuǎn)移特性曲線中出現(xiàn)了明顯的滯回現(xiàn)象,且隨著柵壓掃描范圍的增大而越發(fā)顯著.同時(shí)研究了溫度對(duì)石墨烯場(chǎng)效應(yīng)晶體管性能的影響,隨著溫度的升高,狄拉克點(diǎn)電壓逐漸向零點(diǎn)方向偏移,滯回現(xiàn)象愈加明顯.當(dāng)溫度為75℃時(shí),空穴遷移率與電流開(kāi)關(guān)達(dá)到最佳.
[Abstract]:The study of graphene field effect transistors is of great significance for the continuation of Moore's law. In recent years, the rapid development of large area and high quality graphene thin film preparation technology has further promoted the research of new electronic devices based on graphene materials, which has attracted wide attention in the field of integrated circuits. In this paper, the graphene field effect transistors are fabricated using ITO as gate electrode, Ta_2O_5 as gate insulation layer, graphene as active layer and Ti/Au bilayer metal as source leakage electrode. The results of electrical properties test and analysis show that graphene has a good ohmic contact with the source leakage electrode. At room temperature, graphene field-effect transistors exhibit their unique bipolar characteristics, with a hole mobility of about 2272 cm2/ (V s), current-switching ratio of 6.2. The hysteretic phenomenon appeared in the transfer characteristic curve and became more and more obvious with the increase of the scanning range of gate voltage. At the same time, the effect of temperature on the performance of graphene field-effect transistors is studied. With the increase of temperature, the Dirac point voltage gradually shifts to zero, and the hysteresis phenomenon becomes more and more obvious. When the temperature is 75 鈩，

本文編號(hào)：2347744