基于SiGe HBT工藝的功率放大器模塊及單片電路的設(shè)計(jì)
發(fā)布時(shí)間：2018-11-18 08:38
【摘要】：無(wú)線通信技術(shù)的飛速發(fā)展極大地改變了人們的日常通信交流方式,而射頻功率放大器作為無(wú)線收發(fā)機(jī)中的核心模塊之一,其性能很大程度上關(guān)系到信號(hào)傳輸?shù)馁|(zhì)量以及功率的消耗。隨著4G通信標(biāo)準(zhǔn)的逐漸普及,為了適應(yīng)更高速高質(zhì)量的信息傳輸,射頻功率放大器的效率和線性度等參數(shù)指標(biāo)也必須相應(yīng)地提高,使得功率放大器的設(shè)計(jì)成為射頻前端設(shè)計(jì)中的重點(diǎn)和熱點(diǎn)。目前市場(chǎng)上的射頻功率放大器大部分采用的是GaAs、InGaP等工藝,而SiGe HBT(Heterojunction Bipolar Transistor,異質(zhì)結(jié)雙極型晶體管)由于其成本低、特征頻率高、噪聲和散熱性能好等優(yōu)點(diǎn),在無(wú)線通信領(lǐng)域有著非常廣闊的應(yīng)用前景。本文采用0.18 μm SiGe HBT工藝設(shè)計(jì)了工作在2.4 GHz應(yīng)用于WLAN (Wireless Local Area Networks,無(wú)線局域網(wǎng))領(lǐng)域的一款功率放大器單片電路以及一款高線性輸出功率的板級(jí)放大器模塊。功率放大器單片電路采用三級(jí)放大電路級(jí)聯(lián)的結(jié)構(gòu),偏置在AB類工作狀態(tài)以兼顧線性度和效率；通過(guò)添加適當(dāng)大小的基極鎮(zhèn)流電阻以提高放大電路的穩(wěn)定性；采用白適應(yīng)線性化偏置電路,自動(dòng)調(diào)整功率放大器工作時(shí)的偏置狀態(tài),以提高放大器的線性度和增益；輸出端采用Loadpull(負(fù)載牽引)匹配方式以獲得最大輸出功率,靈活選擇級(jí)間和輸入端匹配網(wǎng)絡(luò)以實(shí)現(xiàn)最大功率傳輸。芯片版圖設(shè)計(jì)時(shí)充分考慮寄生因素和散熱性能。最終該芯片的測(cè)試結(jié)果為：1 dB壓縮點(diǎn)輸出功率為23.4 dBm,增益為28.8 dB,功率附加效率為13.6%。板級(jí)功率放大器模塊是利用三級(jí)功率單元(powercell)芯片在PCB (Printed Circuit Board,印刷電路板)上進(jìn)行匹配調(diào)試完成。根據(jù)每一級(jí)放大電路在增益和輸出功率上的側(cè)重點(diǎn)合理選擇功率單元；依據(jù)功率單元測(cè)試PCB設(shè)計(jì)TRL校準(zhǔn)件；利用TRL校準(zhǔn)方式以獲得各功率單元芯片較為精確的輸入輸出匹配阻抗,逐級(jí)進(jìn)行級(jí)間匹配以達(dá)到高線性輸出功率的指標(biāo)。最終該放大器模塊的測(cè)試結(jié)果為：對(duì)于64QAM(正交幅度調(diào)制)信號(hào),當(dāng)EVM(錯(cuò)誤矢量幅度)為3%時(shí),輸出功率為18.26 dBm,增益為28.5 dB,線性度良好。
[Abstract]:The rapid development of wireless communication technology has greatly changed people's daily communication mode, and RF power amplifier is one of the core modules in wireless transceiver. To a great extent, its performance is related to the quality of signal transmission and the consumption of power. With the popularization of 4G communication standard, in order to adapt to the higher speed and high quality information transmission, the efficiency and linearity of RF power amplifier must be improved accordingly. The design of power amplifier has become the focus of RF front-end design. At present, most of the RF power amplifiers in the market use GaAs,InGaP technology, while SiGe HBT (Heterojunction Bipolar Transistor, heterojunction bipolar transistors) have the advantages of low cost, high characteristic frequency, good noise and heat dissipation, etc. In the field of wireless communication has a very broad application prospects. In this paper, a single chip circuit of power amplifier and a board amplifier module with high linear output power are designed in the field of 2.4 GHz applied in WLAN (Wireless Local Area Networks, wireless local area network (WLAN) using 0.18 渭 m SiGe HBT process. The power amplifier monolithic circuit adopts the three-stage amplifier circuit cascade structure, which is biased in the AB working state to give consideration to the linearity and efficiency, and improves the stability of the amplifier circuit by adding the base ballast resistor of the appropriate size to improve the stability of the amplifier circuit. In order to improve the linearity and gain of the amplifier, the bias state of the power amplifier is automatically adjusted by using the white adaptive linearization bias circuit. The output terminal adopts Loadpull (load traction) matching method to obtain the maximum output power and flexibly selects the matching network between the stages and the input terminal to realize the maximum power transmission. The parasitic factors and heat dissipation are fully considered in the chip layout design. The final test results of the chip are as follows: 1 the output power of dB compression point is 23.4 dBm, gain is 28.8 dB, power addition efficiency is 13.6. The board level power amplifier module is completed by matching and debugging on PCB (Printed Circuit Board, printed circuit board using three level power unit (powercell) chip. According to the emphasis of each amplifier circuit on gain and output power, the power unit is selected reasonably, and the TRL calibrator is designed according to the power unit test PCB. The TRL calibration method is used to obtain the more accurate input and output matching impedance of each power unit chip, and step by step matching between stages to achieve the target of high linear output power. Finally, the test results of the amplifier module are as follows: for 64QAM (orthogonal amplitude modulation) signal, when the EVM (error vector amplitude) is 3, the output power is 18.26 dBm, gain and the linearity is 28.5 dB,.
【學(xué)位授予單位】：山東大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75
本文編號(hào)：2339499
[Abstract]:The rapid development of wireless communication technology has greatly changed people's daily communication mode, and RF power amplifier is one of the core modules in wireless transceiver. To a great extent, its performance is related to the quality of signal transmission and the consumption of power. With the popularization of 4G communication standard, in order to adapt to the higher speed and high quality information transmission, the efficiency and linearity of RF power amplifier must be improved accordingly. The design of power amplifier has become the focus of RF front-end design. At present, most of the RF power amplifiers in the market use GaAs,InGaP technology, while SiGe HBT (Heterojunction Bipolar Transistor, heterojunction bipolar transistors) have the advantages of low cost, high characteristic frequency, good noise and heat dissipation, etc. In the field of wireless communication has a very broad application prospects. In this paper, a single chip circuit of power amplifier and a board amplifier module with high linear output power are designed in the field of 2.4 GHz applied in WLAN (Wireless Local Area Networks, wireless local area network (WLAN) using 0.18 渭 m SiGe HBT process. The power amplifier monolithic circuit adopts the three-stage amplifier circuit cascade structure, which is biased in the AB working state to give consideration to the linearity and efficiency, and improves the stability of the amplifier circuit by adding the base ballast resistor of the appropriate size to improve the stability of the amplifier circuit. In order to improve the linearity and gain of the amplifier, the bias state of the power amplifier is automatically adjusted by using the white adaptive linearization bias circuit. The output terminal adopts Loadpull (load traction) matching method to obtain the maximum output power and flexibly selects the matching network between the stages and the input terminal to realize the maximum power transmission. The parasitic factors and heat dissipation are fully considered in the chip layout design. The final test results of the chip are as follows: 1 the output power of dB compression point is 23.4 dBm, gain is 28.8 dB, power addition efficiency is 13.6. The board level power amplifier module is completed by matching and debugging on PCB (Printed Circuit Board, printed circuit board using three level power unit (powercell) chip. According to the emphasis of each amplifier circuit on gain and output power, the power unit is selected reasonably, and the TRL calibrator is designed according to the power unit test PCB. The TRL calibration method is used to obtain the more accurate input and output matching impedance of each power unit chip, and step by step matching between stages to achieve the target of high linear output power. Finally, the test results of the amplifier module are as follows: for 64QAM (orthogonal amplitude modulation) signal, when the EVM (error vector amplitude) is 3, the output power is 18.26 dBm, gain and the linearity is 28.5 dB,.
【學(xué)位授予單位】：山東大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 周衛(wèi);劉道廣;嚴(yán)利人;;SiGe HBT的發(fā)展及其在微波/射頻通訊中的應(yīng)用[J];微電子學(xué);2006年05期
，本文編號(hào)：2339499
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