MIM冷陰極制備及其特性研究
發(fā)布時(shí)間：2018-11-15 17:33
【摘要】：金屬-絕緣體-金屬(MIM)型陰極是內(nèi)場(chǎng)致發(fā)射陰極的一種,具有體積小、不用預(yù)熱、低噪聲、工作電壓低、對(duì)真空度要求不高等優(yōu)點(diǎn)。這種陰極結(jié)構(gòu)整體厚度一般不超過(guò)1μm,是納米級(jí)薄膜工藝,在薄膜電子器件和低功率真空器件上具有很大的應(yīng)用前景和研究?jī)r(jià)值。本文從薄膜的表征入手,采用不同的工藝來(lái)制備MIM陰極,測(cè)試陰極的發(fā)射性能,并分析影響發(fā)射性能的因素,本文主要研究?jī)?nèi)容如下:(1)以Al-Al2O3-Au陰極結(jié)構(gòu)為研究對(duì)象,采用反應(yīng)濺射和陽(yáng)極氧化兩種不同的方法制備絕緣層Al2O3,并不斷優(yōu)化其工藝參數(shù)。經(jīng)過(guò)多次試驗(yàn),在直流濺射以15W功率沉積20s的Au薄膜用作頂電極具有最好的電子發(fā)射能力;在1Pa壓強(qiáng)下,以Ar:O2為100sccm:25sccm、經(jīng)功率為100W反應(yīng)濺射1小時(shí)制備的Al2O3用作絕緣層耐壓強(qiáng)度為18V左右;在5wt%的葵二酸銨的乙二醇溶液中經(jīng)150V陽(yáng)極氧化12小時(shí)制備的絕緣層具有27V左右的耐壓強(qiáng)度,用作MIM絕緣層使陰極面積為9mm2的單陣列發(fā)射電流最大達(dá)到116.5μA,電流密度為1.29mA/cm2。(2)采用PMMA(聚甲基丙烯酸甲酯)法轉(zhuǎn)移石墨烯薄膜來(lái)替代頂電極Au,通過(guò)測(cè)試轉(zhuǎn)移一至四層石墨烯的樣品,發(fā)現(xiàn)轉(zhuǎn)移四層石墨烯薄膜的樣品發(fā)射性能優(yōu)于轉(zhuǎn)移一至三層的樣品,但仍不如Au用作頂電極的發(fā)射性能好,認(rèn)為可能與石墨烯的生長(zhǎng)質(zhì)量、轉(zhuǎn)移質(zhì)量、襯底的粗糙度等有關(guān)。(3)對(duì)大面積MIM陰極陣列展開應(yīng)用研究,通過(guò)熒光屏對(duì)制備的2×2陣列、3×3陣列和14×11陣列陰極進(jìn)行測(cè)試,從熒光屏圖像來(lái)看,在實(shí)驗(yàn)室工藝條件下制備的多陣列陰極發(fā)射不夠均勻。隨著陰極制備的面積逐步增大,發(fā)射電流密度有所減小。其中,總陰極面積為1.54cm2的14×11陣列最大電流密度為180.7μA/cm2。通過(guò)優(yōu)化制備工藝和設(shè)備可以改善陰極發(fā)射性能,使其在低功率、低噪聲電子源中得到實(shí)際應(yīng)用。
[Abstract]:Metal insulator-metal (MIM) cathode is one of the inner field emission cathodes, which has the advantages of small volume, no preheating, low noise, low working voltage and low vacuum requirement. The overall thickness of the cathode structure is not more than 1 渭 m, which is a nanoscale thin film process. It has great application prospect and research value in thin film electronic devices and low power vacuum devices. In this paper, MIM cathodes are prepared by different processes, the emission properties of the cathode are tested, and the factors affecting the emission performance are analyzed. The main contents of this paper are as follows: (1) taking the structure of Al-Al2O3-Au cathode as the research object, the insulating layer Al2O3, was prepared by reactive sputtering and anodic oxidation, and its process parameters were optimized. After many experiments, the Au film deposited at 15 W power for 20 s has the best electron emission ability as the top electrode. Under the pressure of 1Pa, the Al2O3 prepared by 100W reactive sputtering for 1 hour with Ar:O2 of 100sccm: 25sccm was used as the insulating layer with a voltage of about 18V. The insulation layer prepared by 150 V anodic oxidation for 12 hours in 5 wt% ammonium phthalate ethylene glycol solution has a voltage resistance of about 27 V, and the maximum emission current of a single array with cathode area of 9mm2 is up to 116.5 渭 A when it is used as an insulating layer for MIM. The current density is 1.29 Ma / cm ~ (2). (2) PMMA (polymethyl methacrylate) method is used to transfer graphene films to replace the top electrode Au, samples that transfer one to four layers of graphene by testing. It was found that the emission properties of the transferred four layers graphene film were better than that of the transfer one to three layers sample, but not as good as that of Au as the top electrode. It was considered that the transfer quality and growth quality of the transfer film might be related to the growth quality of graphene. The roughness of substrate is related to. (3) the application of large area MIM cathode array is studied. The cathode of 2 脳 2 array, 3 脳 3 array and 14 脳 11 array are tested by the fluorescent screen. The emission of multi-array cathode is not uniform enough under the condition of laboratory process. The emission current density decreases with the increase of cathode preparation area. The maximum current density of 14 脳 11 arrays with a total cathode area of 1.54cm2 is 180.7 渭 A / cm ~ 2. The cathode emission performance can be improved by optimizing the preparation process and equipment, which can be applied in low power and low noise electronic sources.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN103
本文編號(hào)：2333978
[Abstract]:Metal insulator-metal (MIM) cathode is one of the inner field emission cathodes, which has the advantages of small volume, no preheating, low noise, low working voltage and low vacuum requirement. The overall thickness of the cathode structure is not more than 1 渭 m, which is a nanoscale thin film process. It has great application prospect and research value in thin film electronic devices and low power vacuum devices. In this paper, MIM cathodes are prepared by different processes, the emission properties of the cathode are tested, and the factors affecting the emission performance are analyzed. The main contents of this paper are as follows: (1) taking the structure of Al-Al2O3-Au cathode as the research object, the insulating layer Al2O3, was prepared by reactive sputtering and anodic oxidation, and its process parameters were optimized. After many experiments, the Au film deposited at 15 W power for 20 s has the best electron emission ability as the top electrode. Under the pressure of 1Pa, the Al2O3 prepared by 100W reactive sputtering for 1 hour with Ar:O2 of 100sccm: 25sccm was used as the insulating layer with a voltage of about 18V. The insulation layer prepared by 150 V anodic oxidation for 12 hours in 5 wt% ammonium phthalate ethylene glycol solution has a voltage resistance of about 27 V, and the maximum emission current of a single array with cathode area of 9mm2 is up to 116.5 渭 A when it is used as an insulating layer for MIM. The current density is 1.29 Ma / cm ~ (2). (2) PMMA (polymethyl methacrylate) method is used to transfer graphene films to replace the top electrode Au, samples that transfer one to four layers of graphene by testing. It was found that the emission properties of the transferred four layers graphene film were better than that of the transfer one to three layers sample, but not as good as that of Au as the top electrode. It was considered that the transfer quality and growth quality of the transfer film might be related to the growth quality of graphene. The roughness of substrate is related to. (3) the application of large area MIM cathode array is studied. The cathode of 2 脳 2 array, 3 脳 3 array and 14 脳 11 array are tested by the fluorescent screen. The emission of multi-array cathode is not uniform enough under the condition of laboratory process. The emission current density decreases with the increase of cathode preparation area. The maximum current density of 14 脳 11 arrays with a total cathode area of 1.54cm2 is 180.7 渭 A / cm ~ 2. The cathode emission performance can be improved by optimizing the preparation process and equipment, which can be applied in low power and low noise electronic sources.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN103
【參考文獻(xiàn)】
相關(guān)期刊論文 前7條
1 洪春燕;葉蕓;郭凡;李松;林之曉;蔣亞?wèn)|;郭太良;;陽(yáng)極氧化法制備壁壘型Al_2O_3絕緣膜的研究[J];真空科學(xué)與技術(shù)學(xué)報(bào);2013年01期
2 唐秀鳳;羅發(fā);周萬(wàn)城;朱冬梅;;直流反應(yīng)磁控濺射制備氧化鋁薄膜[J];熱加工工藝;2011年14期
3 張永愛;許華安;郭太良;;陽(yáng)極氧化法制備Ta_2O_5絕緣膜及性能研究[J];功能材料;2009年06期
4 朱緒飛;宋曄;賈紅兵;楊修麗;韓婷;肖迎紅;陸路德;汪信;;從壁壘型氧化膜生長(zhǎng)過(guò)程研究PAA的生長(zhǎng)機(jī)制[J];功能材料;2008年10期
5 趙華玉;牟宗信;;Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering[J];Chinese Physics B;2008年04期
6 吳長(zhǎng)滬;;電泳法制備熒光屏[J];真空電子技術(shù);1992年02期
7 高本輝,楊永康;濺射鍍成膜速率的研究[J];真空科學(xué)與技術(shù);1988年05期
相關(guān)博士學(xué)位論文 前1條
1 朱緒飛;多孔陽(yáng)極氧化鋁形成機(jī)理的研究[D];南京理工大學(xué);2007年
，本文編號(hào)：2333978
本文鏈接：http://sikaile.net/kejilunwen/dianzigongchenglunwen/2333978.html
最近更新
教材專著
