【摘要】：集成門極換流晶閘管(IGCT)作為一個新型的電力半導(dǎo)體器件,廣泛的應(yīng)用于大功率領(lǐng)域。阻斷電壓及其穩(wěn)定性是衡量器件阻斷能力和可靠性的一個非常重要的標志,為了提高GCT的阻斷電壓及其穩(wěn)定性和芯片利用率,需要對其結(jié)終端結(jié)構(gòu)進行優(yōu)化設(shè)計。本文以4.5kV GCT為例,提出了一種橫向變摻雜(VLD)結(jié)終端結(jié)構(gòu)的設(shè)計方法。首先利用Sentaurus-TCAD仿真軟件,重點對VLD結(jié)終端結(jié)構(gòu)的耐壓機理及擊穿特性進行研究,提取合適的終端結(jié)構(gòu)參數(shù),其次對比分析了鈍化層中的電荷對器件擊穿特性的影響,最后對GCTVLD結(jié)構(gòu)的關(guān)鍵制作工藝進行了分析。主要研究內(nèi)容如下:第一,分析了 VLD的結(jié)構(gòu)特點及傳統(tǒng)設(shè)計思路,提出了一種更為簡便的終端掩模設(shè)計方法。采用此方法設(shè)計了一款GCT終端結(jié)構(gòu),并采用Sentaurus-TCAD軟件進行了仿真驗證。結(jié)果表明,VLD結(jié)構(gòu)在耐壓效率、穩(wěn)定性及終端尺寸方面均優(yōu)于傳統(tǒng)的臺面斜角終端及普通的場限環(huán)終端結(jié)構(gòu),并對終端結(jié)構(gòu)參數(shù)進行了優(yōu)化設(shè)計。第二,研究了 VLD終端結(jié)構(gòu)的鈍化膜。分析了鈍化層中固定電荷對擊穿電場強度分布及擊穿電壓的影響。結(jié)果表明,鈍化層中固定電荷的極性(正、負)及密度Qss的大小對終端擊穿特性有很大的影響,并且當其中固定電荷密度大于1 × 109cm2時不適用于VLD結(jié)終端結(jié)構(gòu)。第三,研究了 GCTVLD的關(guān)鍵工藝。根據(jù)優(yōu)化設(shè)計的VLD掩模參數(shù),通過工藝仿真給出的VLD摻雜剖面具體的工藝實施方案,并對GCT VLD結(jié)構(gòu)的阻斷特性進行了仿真驗證,結(jié)果驗證了本文所提出的設(shè)計方法的可行性。本文的研究成果對高壓深結(jié)器件的結(jié)終端結(jié)構(gòu)設(shè)計具有一定的參考價值。
[Abstract]:As a new type of power semiconductor device, integrated gate commutation thyristor (IGCT) is widely used in high power field. The blocking voltage and its stability are very important indicators to measure the blocking ability and reliability of the device. In order to improve the blocking voltage, stability and chip utilization of GCT, it is necessary to optimize the design of the junction terminal structure. Taking 4.5kV GCT as an example, this paper presents a design method for the terminal structure of transversely variable doped (VLD) junctions. Firstly, by using Sentaurus-TCAD simulation software, the voltage resistance mechanism and breakdown characteristics of the terminal structure of the VLD junction are studied, and the appropriate terminal structure parameters are extracted. Secondly, the influence of the charge in the passivation layer on the breakdown characteristics of the device is compared and analyzed. Finally, the key fabrication process of GCTVLD structure is analyzed. The main contents are as follows: first, the structure characteristics and traditional design ideas of VLD are analyzed, and a more convenient design method of terminal mask is proposed. A GCT terminal structure is designed with this method, and the simulation is carried out by Sentaurus-TCAD software. The results show that the VLD structure is superior to the traditional bevel terminal and the common field limiting loop terminal structure in voltage efficiency, stability and terminal size. The structure parameters of the terminal are optimized. Secondly, the passivation film of VLD terminal structure is studied. The influence of fixed charge in passivation layer on the distribution of breakdown electric field and breakdown voltage is analyzed. The results show that the polarity (positive, negative) and density Qss of the fixed charge in the passivation layer have great influence on the breakdown characteristics of the terminal, and it is not suitable for the terminal structure of the VLD junction when the fixed charge density is greater than 1 脳 109cm2. Thirdly, the key technology of GCTVLD is studied. According to the optimized VLD mask parameters, the specific process implementation scheme of VLD doping profile is given by process simulation, and the blocking characteristics of GCT VLD structure are verified by simulation. The results verify the feasibility of the design method proposed in this paper. The research results in this paper have certain reference value for the design of junction terminal structure of high voltage deep junction device.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN34

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