【摘要】：功率放大器是微波射頻通信系統(tǒng)中必不可少的單元,功放性能直接會(huì)影響到發(fā)射機(jī)的性能。尤其在無線通信飛速發(fā)展的今天,使得無線通信系統(tǒng)對(duì)功率放大器提出來更高的要求,高效率、高功率、寬帶、線性化等等。為此本文結(jié)合當(dāng)今通信系統(tǒng)的要求,設(shè)計(jì)了一款S波段寬帶線性射頻功率放大器。本文第一章先對(duì)功放的研究背景和線性化技術(shù)發(fā)展現(xiàn)狀進(jìn)行總結(jié)。第二章中先對(duì)射頻功放的種類進(jìn)行列舉并簡(jiǎn)單的分析了每種放大器的工作原理同時(shí)對(duì)放大器的主要指標(biāo)進(jìn)行了簡(jiǎn)要介紹。隨后介紹了幾種功放的線性化技術(shù)并簡(jiǎn)單分析了每種線性化技術(shù)的特點(diǎn)。在了解功放及其線性化技術(shù)的基本概念后,第三章中主要介紹了寬帶射頻功放的原理,在分析了功率放大器的匹配網(wǎng)絡(luò)后對(duì)射頻功率放大器的方案進(jìn)行分析,最終本文采取的方案是匹配網(wǎng)絡(luò)補(bǔ)償方案,兩級(jí)級(jí)聯(lián)的方式實(shí)現(xiàn)。采用ADL5321芯片作為驅(qū)動(dòng)級(jí)放大器對(duì)輸入信號(hào)進(jìn)行驅(qū)動(dòng)以滿足末級(jí)放大器對(duì)輸入功率的要求;末級(jí)輸出功率放大器采用CREE的CGH40010 GaN管子,為了保證線性同時(shí)兼顧效率,將末級(jí)PA偏置在AB類狀態(tài)。根據(jù)器件官方給定的參數(shù)和模型進(jìn)行ADS仿真。仿真包括對(duì)功放管的工作點(diǎn)、輸入/輸出的阻抗分析和匹配網(wǎng)絡(luò)的設(shè)計(jì)尤其采用微帶線的形式實(shí)現(xiàn)。在仿真完成后又介紹繪制PCB板的一些問題,例如電源電路的設(shè)計(jì),PCB板布局布線的一些規(guī)則,以及散熱片的設(shè)計(jì)經(jīng)過調(diào)試后此功率放大器工作頻段覆蓋2.4GHz到3.6GHz,相對(duì)帶寬高達(dá)40%。輸出功率為33dBm。在第四章中對(duì)PA的線性化方法進(jìn)行簡(jiǎn)單介紹,本文采用的線性化方法是模擬預(yù)失真。在對(duì)三種模擬預(yù)失真結(jié)構(gòu)進(jìn)行分析和仿真后得出每種結(jié)構(gòu)對(duì)于本文設(shè)計(jì)的功放的線性化程度,經(jīng)過對(duì)比發(fā)現(xiàn)帶有偏置的單個(gè)二極管預(yù)失真網(wǎng)絡(luò)能夠適應(yīng)寬帶射頻功率放大器,在中心頻率為3.0GHz,頻偏50MHz時(shí),有效補(bǔ)償了17dB的三階交調(diào)失真;帶T型網(wǎng)絡(luò)的反向并聯(lián)二極管網(wǎng)絡(luò)雖然能夠適應(yīng)寬帶功率放大器,但是存在較大的功率衰減;帶有電橋的復(fù)合型反向并聯(lián)肖特基二極管網(wǎng)絡(luò)雖然能夠起到較好的線性補(bǔ)償,但是不能適應(yīng)寬帶功率放大器。
[Abstract]:Power amplifier is an essential unit in microwave RF communication system. The performance of power amplifier will directly affect the performance of transmitter. Especially in the rapid development of wireless communication today, wireless communication systems put forward higher requirements for power amplifiers, high efficiency, high power, broadband, linearization and so on. In order to meet the requirements of today's communication system, a S-band linear RF power amplifier is designed. The first chapter summarizes the research background of power amplifier and the development of linearization technology. In the second chapter, the types of RF power amplifier are listed and the working principle of each amplifier is simply analyzed. At the same time, the main parameters of the amplifier are briefly introduced. Then several linearization techniques of power amplifier are introduced and the characteristics of each linearization technique are analyzed. After understanding the basic concept of power amplifier and its linearization technology, the third chapter mainly introduces the principle of broadband RF power amplifier, and analyzes the scheme of RF power amplifier after analyzing the matching network of power amplifier. Finally, the scheme adopted in this paper is matching network compensation scheme, two-stage cascade implementation. The ADL5321 chip is used as the driving stage amplifier to drive the input signal to meet the requirement of input power of the last stage amplifier. The last stage output power amplifier uses CGH40010 GaN tube of CREE. In order to guarantee the linearity and the efficiency, the last stage PA is biased in the AB class state. The ADS simulation is carried out according to the given parameters and models of the device. The simulation includes the operation point of power amplifier, the impedance analysis of input / output and the design of matching network, especially in the form of microstrip line. After the simulation is finished, some problems of drawing PCB board are introduced, such as the design of power supply circuit, the rules of layout and wiring of PCB board, and the design of the radiator. After debugging, the working frequency band of the power amplifier covers 2.4GHz to 3.6 GHz. The relative bandwidth is up to 40. The output power is 33dBm. In chapter 4, the linearization method of PA is briefly introduced. The linearization method used in this paper is analogue predistortion. After the analysis and simulation of three analog predistortion structures, the linearization degree of each structure for the power amplifier designed in this paper is obtained. After comparison, it is found that the single diode predistortion network with bias can adapt to the wideband RF power amplifier. When the center frequency is 3.0 GHz and the frequency offset is 50MHz, the third order Intermodulation distortion of 17dB is effectively compensated. The reverse parallel diode network with T-type network can adapt to wideband power amplifier, but it has large power attenuation. Although the composite parallel Schottky diode network with bridge has better linear compensation, it can not adapt to broadband power amplifier.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN722.75

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