【摘要】：功率放大器是微波射頻通信系統(tǒng)中必不可少的單元,功放性能直接會影響到發(fā)射機的性能。尤其在無線通信飛速發(fā)展的今天,使得無線通信系統(tǒng)對功率放大器提出來更高的要求,高效率、高功率、寬帶、線性化等等。為此本文結合當今通信系統(tǒng)的要求,設計了一款S波段寬帶線性射頻功率放大器。本文第一章先對功放的研究背景和線性化技術發(fā)展現狀進行總結。第二章中先對射頻功放的種類進行列舉并簡單的分析了每種放大器的工作原理同時對放大器的主要指標進行了簡要介紹。隨后介紹了幾種功放的線性化技術并簡單分析了每種線性化技術的特點。在了解功放及其線性化技術的基本概念后,第三章中主要介紹了寬帶射頻功放的原理,在分析了功率放大器的匹配網絡后對射頻功率放大器的方案進行分析,最終本文采取的方案是匹配網絡補償方案,兩級級聯的方式實現。采用ADL5321芯片作為驅動級放大器對輸入信號進行驅動以滿足末級放大器對輸入功率的要求;末級輸出功率放大器采用CREE的CGH40010 GaN管子,為了保證線性同時兼顧效率,將末級PA偏置在AB類狀態(tài)。根據器件官方給定的參數和模型進行ADS仿真。仿真包括對功放管的工作點、輸入/輸出的阻抗分析和匹配網絡的設計尤其采用微帶線的形式實現。在仿真完成后又介紹繪制PCB板的一些問題,例如電源電路的設計,PCB板布局布線的一些規(guī)則,以及散熱片的設計經過調試后此功率放大器工作頻段覆蓋2.4GHz到3.6GHz,相對帶寬高達40%。輸出功率為33dBm。在第四章中對PA的線性化方法進行簡單介紹,本文采用的線性化方法是模擬預失真。在對三種模擬預失真結構進行分析和仿真后得出每種結構對于本文設計的功放的線性化程度,經過對比發(fā)現帶有偏置的單個二極管預失真網絡能夠適應寬帶射頻功率放大器,在中心頻率為3.0GHz,頻偏50MHz時,有效補償了17dB的三階交調失真;帶T型網絡的反向并聯二極管網絡雖然能夠適應寬帶功率放大器,但是存在較大的功率衰減;帶有電橋的復合型反向并聯肖特基二極管網絡雖然能夠起到較好的線性補償,但是不能適應寬帶功率放大器。
[Abstract]:Power amplifier is an essential unit in microwave RF communication system. The performance of power amplifier will directly affect the performance of transmitter. Especially in the rapid development of wireless communication today, wireless communication systems put forward higher requirements for power amplifiers, high efficiency, high power, broadband, linearization and so on. In order to meet the requirements of today's communication system, a S-band linear RF power amplifier is designed. The first chapter summarizes the research background of power amplifier and the development of linearization technology. In the second chapter, the types of RF power amplifier are listed and the working principle of each amplifier is simply analyzed. At the same time, the main parameters of the amplifier are briefly introduced. Then several linearization techniques of power amplifier are introduced and the characteristics of each linearization technique are analyzed. After understanding the basic concept of power amplifier and its linearization technology, the third chapter mainly introduces the principle of broadband RF power amplifier, and analyzes the scheme of RF power amplifier after analyzing the matching network of power amplifier. Finally, the scheme adopted in this paper is matching network compensation scheme, two-stage cascade implementation. The ADL5321 chip is used as the driving stage amplifier to drive the input signal to meet the requirement of input power of the last stage amplifier. The last stage output power amplifier uses CGH40010 GaN tube of CREE. In order to guarantee the linearity and the efficiency, the last stage PA is biased in the AB class state. The ADS simulation is carried out according to the given parameters and models of the device. The simulation includes the operation point of power amplifier, the impedance analysis of input / output and the design of matching network, especially in the form of microstrip line. After the simulation is finished, some problems of drawing PCB board are introduced, such as the design of power supply circuit, the rules of layout and wiring of PCB board, and the design of the radiator. After debugging, the working frequency band of the power amplifier covers 2.4GHz to 3.6 GHz. The relative bandwidth is up to 40. The output power is 33dBm. In chapter 4, the linearization method of PA is briefly introduced. The linearization method used in this paper is analogue predistortion. After the analysis and simulation of three analog predistortion structures, the linearization degree of each structure for the power amplifier designed in this paper is obtained. After comparison, it is found that the single diode predistortion network with bias can adapt to the wideband RF power amplifier. When the center frequency is 3.0 GHz and the frequency offset is 50MHz, the third order Intermodulation distortion of 17dB is effectively compensated. The reverse parallel diode network with T-type network can adapt to wideband power amplifier, but it has large power attenuation. Although the composite parallel Schottky diode network with bridge has better linear compensation, it can not adapt to broadband power amplifier.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN722.75

【參考文獻】

相關期刊論文 前3條

1 Yu Qijin;Yu Cuiping;Tang Bihua;Liu Yuan'an;;Design of High-Efficiency broadband power amplifier using low-pass bias network[J];The Journal of China Universities of Posts and Telecommunications;2016年01期

2 劉潔;胡波雄;王剛;蘇小保;;一種基于二極管的L波段行波管預失真電路[J];電子器件;2015年01期

3 齊國棟;;印制電路板特性阻抗的生產可行性設計[J];印制電路信息;2006年08期

相關博士學位論文 前1條

1 劉輝;射頻功率放大器線性化技術研究[D];西安電子科技大學;2005年

相關碩士學位論文 前6條

1 楊辰;模擬預失真器的研究與設計[D];電子科技大學;2015年

2 徐鋼揚;寬帶射頻功率放大器設計[D];北方工業(yè)大學;2014年

3 張永勝;S波段高效率功率放大器的研究與實現[D];南京理工大學;2014年

4 呂航;12M-1GHz微波寬帶功率放大器設計[D];電子科技大學;2013年

5 羅威;TD-SCDMA高效率F類功率放大器設計與實現[D];電子科技大學;2012年

6 杜作峰;基于預失真技術的2.4G射頻功率放大器的線性化研究[D];哈爾濱工業(yè)大學;2007年

，

本文編號：2326970