FS結(jié)構(gòu)的3300V IGBT終端設(shè)計
發(fā)布時間：2018-11-10 18:21
【摘要】：IGBT自誕生以來就以其優(yōu)異的性能和廣闊的應(yīng)用前景激勵著一代又一代工程師進行探索和研究。截至目前為止,高壓IGBT的核心技術(shù)仍然掌握在國外少數(shù)幾家公司手中。國內(nèi)由于起步晚、工藝能力薄弱等原因一直處于追趕狀態(tài)。對于高壓IGBT而言,結(jié)終端的設(shè)計對于器件的耐壓以及可靠性都有重要的意義。本文的主要工作就是設(shè)計出一種適用于3300V FS IGBT的終端結(jié)構(gòu)。1、首先分析了功率器件的擊穿原理以及主流終端結(jié)構(gòu)的耐壓機制,綜合比較了各種終端結(jié)構(gòu)的優(yōu)勢和不足。結(jié)合代工廠的工藝條件,最終選定了場限環(huán)結(jié)合雙級場板這種終端結(jié)構(gòu)進行設(shè)計。2、和代工廠協(xié)商制定工藝制造流程,仿真優(yōu)化得到終端的各項基本參數(shù)。并且在設(shè)計的過程中選擇了兩種不同的表面電場分布進行設(shè)計對比。在此基礎(chǔ)上,結(jié)合代工廠給定的版圖設(shè)計規(guī)則制定版圖方案,完成了版圖的繪制,并交由代工廠流片。3、對流片回來的芯片進行測試,擊穿電壓達到4000V以上,滿足3300V的設(shè)計目標。此外,我們挑選出一部分靜態(tài)測試參數(shù)較好的器件進行高溫反偏考核�？己私Y(jié)果顯示,采用三角形電場分布的終端結(jié)構(gòu)的可靠性要優(yōu)于均勻電場分布的終端結(jié)構(gòu)。因此,我們所提出的三角形電場分布終端是一種更為優(yōu)化的終端結(jié)構(gòu)。
[Abstract]:Since its birth, IGBT has inspired generations of engineers to explore and research with its excellent performance and broad application prospects. So far, the core technology of high-voltage IGBT is still in the hands of a few foreign companies. Domestic due to late start, weak process capacity and other reasons have been in catch-up state. For high voltage IGBT, the design of junction terminal is of great significance to the voltage resistance and reliability of the device. The main work of this paper is to design a terminal structure suitable for 3300V FS IGBT. 1. Firstly, the breakdown principle of power device and the voltage withstand mechanism of mainstream terminal structure are analyzed, and the advantages and disadvantages of various terminal structures are comprehensively compared. Combined with the process conditions of the manufacturing plant, the field limiting ring combined with the two-stage field plate is finally selected to design the terminal structure. 2. In consultation with the manufacturer, the process manufacturing process is worked out, and the basic parameters of the terminal are obtained by simulation and optimization. In the process of design, two different surface electric field distributions are selected and compared. On this basis, combined with the layout design rules given by the manufacturer, the layout scheme was worked out, and the layout drawing was completed, and the chip returned from the chip was transferred to the factory. The chip returned from the convection chip was tested, and the breakdown voltage reached more than 4000 V. Meet the design goal of 3300V. In addition, we select some devices with better static test parameters for high temperature reverse bias test. The results show that the terminal structure with triangular electric field distribution is more reliable than that with uniform electric field distribution. Therefore, the triangular electric field distribution terminal proposed by us is a more optimized terminal structure.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8
本文編號：2323242
[Abstract]:Since its birth, IGBT has inspired generations of engineers to explore and research with its excellent performance and broad application prospects. So far, the core technology of high-voltage IGBT is still in the hands of a few foreign companies. Domestic due to late start, weak process capacity and other reasons have been in catch-up state. For high voltage IGBT, the design of junction terminal is of great significance to the voltage resistance and reliability of the device. The main work of this paper is to design a terminal structure suitable for 3300V FS IGBT. 1. Firstly, the breakdown principle of power device and the voltage withstand mechanism of mainstream terminal structure are analyzed, and the advantages and disadvantages of various terminal structures are comprehensively compared. Combined with the process conditions of the manufacturing plant, the field limiting ring combined with the two-stage field plate is finally selected to design the terminal structure. 2. In consultation with the manufacturer, the process manufacturing process is worked out, and the basic parameters of the terminal are obtained by simulation and optimization. In the process of design, two different surface electric field distributions are selected and compared. On this basis, combined with the layout design rules given by the manufacturer, the layout scheme was worked out, and the layout drawing was completed, and the chip returned from the chip was transferred to the factory. The chip returned from the convection chip was tested, and the breakdown voltage reached more than 4000 V. Meet the design goal of 3300V. In addition, we select some devices with better static test parameters for high temperature reverse bias test. The results show that the terminal structure with triangular electric field distribution is more reliable than that with uniform electric field distribution. Therefore, the triangular electric field distribution terminal proposed by us is a more optimized terminal structure.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8
【參考文獻】
相關(guān)期刊論文 前1條
1 武祥;;我國IGBT的產(chǎn)業(yè)現(xiàn)狀和發(fā)展[J];電子工業(yè)專用設(shè)備;2012年12期
，本文編號：2323242
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