使用濺射AlN成核層實現(xiàn)大規(guī)模生產(chǎn)深紫外LED
發(fā)布時間：2018-11-09 18:26
【摘要】：高質(zhì)量AlN薄膜對制造高性能深紫外器件非常重要,但是目前還很難使用大型工業(yè)MOCVD生長出高質(zhì)量的AlN薄膜。采用磁控濺射制備了不同厚度的用作成核層的AlN薄膜,使用大型工業(yè)MOCVD直接在成核層上高溫生長AlN外延層,研究了不同成核層對AlN外延層質(zhì)量的影響。通過掃描電子顯微鏡和原子力顯微鏡對成核層AlN薄膜的表面形貌進行表征;使用高分辨X射線衍射儀對AlN外延層晶體質(zhì)量進行表征,結(jié)果表明:在濺射成核層上生長的AlN外延層的晶體質(zhì)量有顯著提高。使用大型工業(yè)MOCVD在藍寶石襯底上成功制備出中心波長為282 nm的可商用深紫外LED,在注入電流為20 m A時,單顆深紫外LED芯片的光輸出功率達到了1.65 m W,對應(yīng)的外量子效率為1.87%,飽和光輸出功率達到4.31 mW。
[Abstract]:High quality AlN thin films are very important for manufacturing high performance deep ultraviolet devices, but it is very difficult to grow high quality AlN thin films with large industrial MOCVD. AlN thin films with different thickness were prepared by magnetron sputtering. AlN epitaxial layers were grown directly on the nucleated layer by large industrial MOCVD. The effect of different nucleation layers on the quality of AlN epitaxial layers was studied. The surface morphology of nucleated AlN films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The crystal quality of AlN epitaxial layer was characterized by high resolution X-ray diffractometer. The results show that the crystal quality of AlN epitaxial layer grown on sputtering nucleated layer has been improved significantly. Commercial deep ultraviolet LED, with a center wavelength of 282 nm was successfully fabricated on sapphire substrate using large industrial MOCVD. When the injection current was 20 Ma, the optical output power of a single deep ultraviolet LED chip reached 1.65 MW. The corresponding external quantum efficiency is 1.87 and the output power of saturated light is 4.31 mW..
【作者單位】： 中國科學(xué)院半導(dǎo)體研究所半導(dǎo)體照明研發(fā)中心;
【基金】：國家自然科學(xué)基金資助項目(61334009,61474109,61306050)
【分類號】：TN312.8
本文編號：2321211
[Abstract]:High quality AlN thin films are very important for manufacturing high performance deep ultraviolet devices, but it is very difficult to grow high quality AlN thin films with large industrial MOCVD. AlN thin films with different thickness were prepared by magnetron sputtering. AlN epitaxial layers were grown directly on the nucleated layer by large industrial MOCVD. The effect of different nucleation layers on the quality of AlN epitaxial layers was studied. The surface morphology of nucleated AlN films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The crystal quality of AlN epitaxial layer was characterized by high resolution X-ray diffractometer. The results show that the crystal quality of AlN epitaxial layer grown on sputtering nucleated layer has been improved significantly. Commercial deep ultraviolet LED, with a center wavelength of 282 nm was successfully fabricated on sapphire substrate using large industrial MOCVD. When the injection current was 20 Ma, the optical output power of a single deep ultraviolet LED chip reached 1.65 MW. The corresponding external quantum efficiency is 1.87 and the output power of saturated light is 4.31 mW..
【作者單位】： 中國科學(xué)院半導(dǎo)體研究所半導(dǎo)體照明研發(fā)中心;
【基金】：國家自然科學(xué)基金資助項目(61334009,61474109,61306050)
【分類號】：TN312.8
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