【摘要】：常規(guī)SOI基陽(yáng)極短路橫向絕緣柵雙極晶體管(SA-LIGBT)提高了LIGBT的關(guān)斷速度,但常規(guī)SOI SA-LIGBT存在負(fù)阻效應(yīng)。而負(fù)阻效應(yīng)增大了SA-LIGBT的功耗,降低了器件的跨導(dǎo)和線性性。為了抑制負(fù)阻效應(yīng),本論文在深入分析SA-LIGBT負(fù)阻效應(yīng)產(chǎn)生的基礎(chǔ)上,提出了兩種新型LIGBT,具體研究結(jié)果如下:(1)提出具有陽(yáng)極P型埋層(P-Buired-Layer Anode side)橫向絕緣柵雙極晶體管(PBLA-LIGBT)。較常規(guī)SA-LIGBT結(jié)構(gòu),PBLA-LIGBT在其陽(yáng)極新添加一個(gè)P型電荷區(qū)。新結(jié)構(gòu)通過(guò)新加入的P型電荷區(qū)增長(zhǎng)了電子電流的路徑,進(jìn)而通過(guò)減小陽(yáng)極N區(qū)電子通道的寬度,提高了陽(yáng)極P區(qū)下方路徑的電阻值Rp,抑制了SA-LIGBT的負(fù)阻效應(yīng)。論文還對(duì)新結(jié)構(gòu)的輸出特性、擊穿特性、關(guān)斷特性進(jìn)行了分析,仿真結(jié)果表明:新結(jié)構(gòu)PBLA-LIGBT在抑制負(fù)阻效應(yīng)和提高關(guān)斷速度的情況下,耐壓達(dá)到226V,且新結(jié)構(gòu)具有制造工藝簡(jiǎn)單,流片成本低的優(yōu)點(diǎn)。(2)提出具有陽(yáng)極弱反型層(Anode Weak Inversion Layer)橫向絕緣柵雙極晶體管(AWIL-LIGBT)。新結(jié)構(gòu)在常規(guī)SA-LIGBT的陽(yáng)極區(qū)引入一個(gè)反型區(qū)。新結(jié)構(gòu)的技術(shù)特點(diǎn)在于,基于弱反型所形成的高電阻,使陽(yáng)極P+/N-buffer結(jié)在小的多子電流下實(shí)現(xiàn)導(dǎo)通,陽(yáng)極P+區(qū)中的空穴可以更早的注入漂移區(qū),從而消除負(fù)阻效應(yīng)。通過(guò)與常規(guī)SA-LIGBT對(duì)比研究,仿真結(jié)果表明:新結(jié)構(gòu)在關(guān)斷速度不變的同時(shí)擊穿電壓提升了111V(約56%)的情況下,消除了常規(guī)陽(yáng)極短路LIGBT在導(dǎo)通過(guò)程中出現(xiàn)的負(fù)阻效應(yīng)。
[Abstract]:Conventional SOI based anode short circuit transverse insulated gate bipolar transistor (SA-LIGBT) improves the turn-off speed of LIGBT, but the conventional SOI SA-LIGBT has negative resistance effect. The negative resistance effect increases the power consumption of SA-LIGBT and reduces the transconductance and linearity of the device. In order to suppress the negative resistance effect, based on the in-depth analysis of the negative resistance effect of SA-LIGBT, two new types of LIGBT, are proposed in this paper. The results are as follows: (1) A novel anodic P-type buried layer (P-Buired-Layer Anode side) transversely insulated gate bipolar transistor (PBLA-LIGBT) is proposed. Compared with the conventional SA-LIGBT structure, PBLA-LIGBT adds a new P-type charge region to its anode. The new structure increases the path of electron current through the new P-type charge region, and then increases the resistance value Rp, of the path under the anode P region by reducing the width of the electron channel in the N region of the anode, thus suppressing the negative resistance effect of SA-LIGBT. The output characteristics, breakdown characteristics and turn-off characteristics of the new structure are also analyzed. The simulation results show that the new structure PBLA-LIGBT can withstand the voltage of 226V under the condition of suppressing the negative resistance effect and increasing the turn-off speed. The new structure has the advantages of simple fabrication process and low cost of the wafer. (2) A novel transversely insulated gate bipolar transistor (AWIL-LIGBT) with anodic weak inversion layer (Anode Weak Inversion Layer) is proposed. The new structure introduces a reverse region in the anode region of conventional SA-LIGBT. The technical characteristic of the new structure is that the anode P / N-buffer junction can be switched on at a small polyton current based on the high resistance formed by the weak inversion type, and the hole in the anode P region can be injected into the drift region earlier, thus eliminating the negative resistance effect. By comparing with conventional SA-LIGBT, the simulation results show that the new structure can eliminate the negative resistance effect of conventional anodic short circuit LIGBT in the process of conduction by increasing the breakdown voltage by 111 V (about 56%) at the same time when the turn-off speed is constant.
【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN322.8

【參考文獻(xiàn)】

相關(guān)期刊論文 前4條

1 楊洪強(qiáng),韓磊,陳星弼;利用電阻場(chǎng)板提高SOI-LIGBT的性能(英文)[J];半導(dǎo)體學(xué)報(bào);2002年10期

2 張海鵬,宋安飛,楊國(guó)勇,馮耀蘭,魏同立;漂移區(qū)減薄的多溝道薄膜SOILIGBT的研究(Ⅰ)——低壓截止態(tài)泄漏電流的溫度特性[J];固體電子學(xué)研究與進(jìn)展;2001年01期

3 楊健,方健,李肇基;高速SOI-LIGBT的數(shù)值分析[J];電子科技大學(xué)學(xué)報(bào);2000年02期

4 李文宏,羅晉生;薄膜SOI RESURF結(jié)構(gòu)擊穿電壓分析[J];半導(dǎo)體學(xué)報(bào);2000年02期

，

本文編號(hào)：2315837