【摘要】：隨著功率器件向著大容量、高頻率方向的發(fā)展,對續(xù)流二極管也提出了更嚴(yán)格的要求,硅作為自然界最豐富的材料之一,以硅為基礎(chǔ)的功率器件仍將是一個相當(dāng)長時間范圍內(nèi)的主流器件。因此,研究硅基功率二極管的快速軟恢復(fù)技術(shù),進一步優(yōu)化或改進器件結(jié)構(gòu),獲得在應(yīng)用中滿意的反向恢復(fù)特性具有很現(xiàn)實的實際意義和應(yīng)用價值。本文首先簡要分析了硅基功率二極管的反向恢復(fù)特性原理,指出了要想獲得軟關(guān)斷特性,關(guān)鍵在于實現(xiàn)器件內(nèi)部載流子的反轉(zhuǎn)分布;在此基礎(chǔ)上,提出了一種場電荷抽取二極管結(jié)構(gòu),該結(jié)構(gòu)對陰極進行改進,在陰極部分引入P+層,在關(guān)斷末期,通過器件內(nèi)部電場的作用,使得陰極的P+部分注入空穴,減緩了反向恢復(fù)電流的變化率,從而獲得軟關(guān)斷特性;并簡要介紹了表征功率二極管反向恢復(fù)特性的參數(shù)。接著,詳細(xì)討論了場電荷抽取二極管的結(jié)構(gòu)設(shè)計,從理論上探討了器件反向恢復(fù)特性與結(jié)構(gòu)之間的關(guān)系,并給出它們之間的數(shù)學(xué)計算式;在此基礎(chǔ)上,設(shè)計了一個150A/1200V的場電荷抽取二極管結(jié)構(gòu),采用數(shù)值模擬的方法驗證了器件的正向?qū)ㄌ匦浴⒎聪蜃钄嗵匦院蛣討B(tài)開關(guān)特性。結(jié)果表明:場電荷抽取二極管結(jié)構(gòu)能夠?qū)崿F(xiàn)快速軟關(guān)斷,相比少子壽命技術(shù)二極管其關(guān)斷損耗更小。然后,對場電荷抽取二極管結(jié)構(gòu)的反向恢復(fù)特性作了進一步的探討,討論了在低溫、高換向率dtdi下,器件反向恢復(fù)特性的變化情況。結(jié)果發(fā)現(xiàn):場電荷抽取二極管在上述條件下,仍能夠?qū)崿F(xiàn)軟關(guān)斷,具有較強的耐動態(tài)雪崩的能力。最后,優(yōu)化了器件結(jié)構(gòu)參數(shù),使得器件反向特性到達(dá)最佳。在結(jié)構(gòu)研究的基礎(chǔ)上,更進一步的研究了場電荷抽取二極管器件的制作工藝,由于器件結(jié)構(gòu)陰極比較復(fù)雜,提出了采用兩步擴散法的工藝方案,設(shè)計了場電荷抽取二極管的工藝流程,采用數(shù)值模擬技術(shù),模擬了整個工藝方案,并驗證了工藝制作完成后,器件的各種特性參數(shù)。結(jié)果表明:器件各種特性參數(shù)符合預(yù)期設(shè)計,表明該工藝方案可行。最后,本論文的研究成果對于高壓快速軟關(guān)斷二極管的開發(fā)和設(shè)計有一定的參考價值和實際意義。
[Abstract]:With the development of power devices in the direction of large capacity and high frequency, more stringent requirements have been put forward for the continuous current diodes. Silicon is one of the most abundant materials in nature. Silicon-based power devices will remain a mainstream device for a long time. Therefore, it is of practical significance and practical value to study the fast soft recovery technology of silicon based power diode, to further optimize or improve the device structure, and to obtain satisfactory reverse recovery characteristics in application. In this paper, the principle of reverse recovery characteristics of silicon based power diode is briefly analyzed, and the key to obtain soft turn-off characteristic is to realize the reverse distribution of carriers in the device. On this basis, a structure of field charge extraction diode is proposed. The structure improves the cathode and introduces P layer into the cathode. At the end of turn-off, the P part of the cathode is injected into the hole through the action of the electric field inside the device. The change rate of reverse recovery current is slowed down and the soft turn-off characteristic is obtained. The parameters that characterize the reverse recovery characteristics of power diodes are briefly introduced. Then, the structure design of the field charge extraction diode is discussed in detail, and the relationship between the reverse recovery characteristic and the structure of the device is discussed theoretically, and the mathematical formula between them is given. Based on this, a field charge decimation diode structure of 150A/1200V is designed, and the forward, reverse blocking and dynamic switching characteristics of the device are verified by numerical simulation. The results show that the structure of field charge decimation diode can realize fast soft turn-off, and its turn-off loss is smaller than that of minority carrier diode. Then, the reverse recovery characteristics of the field charge decimation diode structure are further discussed, and the change of the reverse recovery characteristics of the device at low temperature and high commutation rate dtdi is discussed. The results show that the field charge decimation diode can still achieve soft turn-off under the above conditions and has a strong ability to resist dynamic avalanche. Finally, the structure parameters of the device are optimized to optimize the reverse characteristics of the device. On the basis of the structure research, the fabrication process of the field charge extraction diode device is further studied. Because the structure cathode of the device is relatively complex, a two-step diffusion method is proposed. The process flow of field charge extraction diode is designed and the whole process scheme is simulated by numerical simulation technology. The various characteristic parameters of the device are verified after the fabrication of the process. The results show that the various characteristic parameters of the device are in line with the expected design, which indicates that the process scheme is feasible. Finally, the research results of this paper have certain reference value and practical significance for the development and design of high voltage fast soft turn off diode.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN313.4

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